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| Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR18N90P VDSS ID25 RDS(on) trr = = 900V 10.5A 660m 300ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 900 900 30 40 10.5 36 9 800 15 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C C V~ N/lb. g ISOPLUS247 E153432 Isolated Tab G = Gate S = Source D = Drain Fearures Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Fast intrinsic diode Avalanche rated Low package inductance Advantages Low gate drive requirement High power density Applications: Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 9A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 900 3.0 6.0 100 V V nA 25 A 1.5 mA 660 m (c) 2008 IXYS CORPORATION, All rights reserved DS100058(10/08) IXFR18N90P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 9A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 9A RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 9A, Note 1 Gate input resistance Characteristic Values Min. Typ. Max. 6 10 1.2 5230 366 53 40 33 60 44 97 30 40 S pF pF pF ns ns ns ns nC nC nC 0.62 C/W C/W ISOPLUS247 (IXFR) Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 9A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 18 72 1.5 A A V 300 ns 1.0 10.8 C A Note 1: Pulse test, t 300s; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR18N90P Fig. 1. Output Characteristics @ 25C 18 16 14 VGS = 10V 9V 8V 40 36 32 28 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes ID - Amperes 12 10 8 6 4 2 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 6V 7V 24 20 16 12 8 8V 7V 6V 5V 5V 4 0 0 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 18 16 14 VGS = 10V 9V 8V 3.2 Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature VGS = 10V 2.8 RDS(on) - Normalized ID - Amperes 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 7V 2.4 I D = 18A 2.0 I D = 9A 1.6 1.2 0.8 0.4 6V 5V 18 20 22 24 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current 2.8 2.6 2.4 VGS = 10V TJ = 125C 12 11 10 9 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 4 8 12 16 20 24 28 32 36 TJ = 25C 8 ID - Amperes 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFR18N90P Fig. 7. Input Admittance 32 28 24 20 16 12 8 4 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 18 TJ = - 40C 16 14 Fig. 8. Transconductance 25C TJ = 125C 25C - 40C g f s - Siemens 12 10 8 6 4 2 0 0 4 8 12 16 20 24 28 32 125C ID - Amperes VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 55 50 45 40 10 9 8 7 VDS = 450V I D = 9A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts TJ = 125C TJ = 25C 35 30 25 20 15 10 5 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 10,000 1.00 Fig. 12. Maximum Transient Thermal Impedance Capacitance - PicoFarads Ciss Z(th)JC - C / W 1,000 0.10 Coss 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 0.01 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_18N90P(76)10-22-08 |
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