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PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 -- 16 November 2009 Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
Switched-mode power supplies
1.4 Quick reference data
Table 1. VDS Quick reference Conditions Tmb = 25 C; see Figure 1 and 2 Ptot total power dissipation gate-drain charge Tmb = 25 C; see Figure 3 Min Typ Max 150 50 W Unit V drain-source voltage Tj 25 C; Tj 175 C Symbol Parameter
Dynamic characteristics QGD VGS = 10 V; VDS = 120 V; Tj = 25 C; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 33 45 nC
Static characteristics RDSon drain-source on-state resistance 30 35 m
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name PSMN035-150P TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
2 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C Tmb = 100 C; see Figure 1 and 2 Tmb = 25 C; see Figure 1 and 2 tp 10 s; pulsed; Tmb = 25 C; see Figure 2 Tmb = 25 C; see Figure 3 Conditions Tj 25 C; Tj 175 C Tj 175 C; Tj 25 C; RGS = 20 k Min -20 -55 -55 Max 150 150 20 36 50 200 250 175 175 50 200 460 Unit V V V A A A W C C A A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness non-repetitive VGS = 10 V; Tj(init) = 25 C; ID = 47 A; Vsup 50 V; drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 ; see Figure 4 energy non-repetitive avalanche current Vsup 50 V; VGS = 10 V; Tj(init) = 25 C; RGS = 50 ; unclamped; see Figure 4
IAS
-
50
A
120 Ider (%) 80
03aa24
103 ID (A) 102
003aaa016
RDSon = VDS/ ID tp = 10 s
100 s 40 10 P d= tp T D.C. tp T 0 0 50 100 150 Tmb (C) 200 1 1 10 102 VDS (V) 103 t 10 ms 100 ms 1 ms
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
Fig 2.
Safe operating area; continuous and peak drain currents as a function of drain-source volt
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
3 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
120 Pder (%) 80
03aa16
102
003aaa017
IAS (A)
25 C
10
40
Tj prior to avalanche = 150 C
0 0 50 100 150 Tmb (C) 200
1 10-3
10-2
10-1
1
tp (ms)
10
Fig 3.
Normalized total power dissipation as a function of mounting base temperature
Fig 4.
Non-repetitive avalanche ruggedness current as a function of pulse duration
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
4 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ 0.6 Max 60 Unit K/W K/W
thermal resistance from junction to ambient vertical in still air
1 Zth(j-mb) (K/W) 10-1 = 0.5 0.2 0.1 0.05 0.02 10-2 Single Pulse
P
003aaa018
=
tp T
tp
t T
10-3 10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 5.
Transient thermal impedance from junction to solder point as a function of pulse duration
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
5 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 250 A; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 150 V; VGS = 0 V; Tj = 25 C VDS = 150 V; VGS = 0 V; Tj = 175 C VGS = 10 V; VDS = 0 V; Tj = 25 C VGS = -10 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 11 and 12 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11 and 12 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 15 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V; Tj = 25 C VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 14 VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 13 VDS = 75 V; RL = 1.5 ; VGS = 10 V; RG(ext) = 5.6 ; Tj = 25 C ID = 50 A; VDS = 120 V; VGS = 10 V; Tj = 25 C; see Figure 13 79 17 33 4720 456 208 25 138 79 93 0.85 118 0.66 45 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC Min 150 1 2 Typ 3 0.05 2 2 30 Max 4 10 500 100 100 98 35 Unit V V V A A nA nA m m
Static characteristics
Source-drain diode
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
6 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
50 ID (A) 40 VGS = 10 V 8V
003aaa019
50 ID (A) 40
003aaa020
6V
VDS > ID x RDSon
30 5.4 V 20 5.2 V 5V 10 4.8 V 4.6 V 0 0 0.4 0.8 1.2 4.4 V 1.6 2 VDS (V)
30
175 C
20
Tj = 25 C
10
0 0 2 4 6 8 10 VGS (V)
Fig 6.
Output characteristics: drain current as a function of drain-source voltage; typical values
003aaa024
Fig 7.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
003aaa025
10-2 ID (A)
50 10-3 min 10-4 typ max 10-5 30 Tj = 175 C 20 gfs (S) 40 Tj = 25 C
10-6
10
10-7
1
2
3
4 VGS (V)
5
0 0 10 20 30 40 ID (A) 50
Fig 8.
Sub-threshold drain current as a function of gate-source voltage
Fig 9.
Forward transconductance as a function of drain current; typical values
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
7 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
4.5 4 VGS(th) (V) 3.5 3 typ 2.5 2 1.5 min
003aaa023
max
0.14 RDSon () 4.4 V 0.12 4.6 V 0.10 0.08 0.06 0.04
003aaa021
4.8 V 5.0 V 5.2 V 5.4 V
1 0.5 0 -60 -20 0.02 0 0 5 10 15 20
6.0 V VGS = 8 V
20
60
100 140 Tj (C)
180
25 ID (A)
30
Fig 10. Gate-source threshold voltage as a function of junction temperature
3.0 2.8 a 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 0 40 80 160 120 Tj (C)
003aaa022
Fig 11. Drain-source on-state resistance as a function of drain current; typical values
10 VGS (V) 8 ID = 50 A Tj = 25 C VDD = 30 V
003aaa028
6
VDD = 120 V
4
2
0 0 20 40 60 QG (nC) 80
Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate charge; typical values
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
8 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
104 Ciss, Coss, Crss (pF) Ciss
003aaa026
50 IS 45
003aaa027
(A) 40 35 30 Tj = 175 C
103 Coss
25 20 15 10 Crss 5 Tj = 25 C
102
10-1
0 1 10 VDS (V) 102 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V)
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
Fig 15. Source current as a function of source-drain voltage; typical values
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
9 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 16. Package outline SOT78 (TO-220AB)
PSMN035-150P_4 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
10 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7. Revision history Release date 20091116 Data sheet status Product data sheet Change notice Supersedes PSMN035-150_SERIES_HG_3 Document ID PSMN035-150P_4 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PSMN035-150P separated from data sheet PSMN035-150_SERIES_HG_3. Product specification Product specification PSMN035-150_SERIES_2 PSMN035-150_SERIES_1 -
PSMN035-150_SERIES_HG_3 20000328 PSMN035-150_SERIES_2 PSMN035-150_SERIES_1 19990801 19990201
Objective specification -
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
11 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN035-150P_4
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 -- 16 November 2009
12 of 13
NXP Semiconductors
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 November 2009 Document identifier: PSMN035-150P_4

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