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DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
VDSS ID25
Maximum Ratings 100 100 20 30 30.0 240 TBD TBD 5.5 >200 550 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE
= = =
100 V 30.0 A 0.06 550 W
RDS(on) PDC
PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25C Derate 4.4W/C above 25C Tc = 25C
DRAIN
270 3.5 0.25 0.53 Characteristic Values
TJ = 25C unless otherwise specified
SD1
SD2
Features
min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 a VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test
typ.
max. 100 V V nA A A S +175 C C +175 C C g
* Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * *
cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials
2
2.5
4 100 25 250 0.06
9.7 -55 175 -55 300 2
Advantages
* Optimized for RF and high speed
switching
* Easy to mount--no insulators needed * High power density
DE275-101N30A
RF Power MOSFET
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions
VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
typ.
max. 5 pF pF pF pF ns ns ns ns nC nC nC
2500 700 145 16 5 5 8 8 94 11 42 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 30.0 240 2.5 600
A A V ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,860,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715
DE275-101N30A
RF Power MOSFET
Fig. 1
Typical Transfer Characteristics VDS = 15V ID = 15A
1 00 90
Fig. 2
Typical Output Characteristics PW = 10 S 55 50 45
Top 6-9V 5.5V 5V 4.5V 4V 3.5V
ID , Drain Current (A)
ID, Drain Currnet (A)
80 70 60 50 40 30 20 1 0 0
40 35 30 25 20 15 10 5 0
Bottom
3
4
5
6
7
8
9
0
5
10
15
20
25
30
VGS, Gate-to Source Voltage (volts)
VDS, Drain-to-Source Voltage (V)
Fig. 3
Gate Charge vs. Gate-to-Source Voltage V DS = 50V ID = 15A
16
Fig. 4
Extended Typical Output Characteristics
14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0
Top
Gate-to-Source Voltage (V)
ID , Drain Currnet (A)
Bottom
9V 8V 7V 6V 5.5V 5V 4.5V 4V 3.5V
0
10
20
30
40
50
Gate Charge (nC)
Fig. 5
V D S vs. Capacitance 10000
V DS, Drain-to-Source Voltage
Ciss
Capacitance (pF)
1000
Coss Crss
100
10 0 10 20 30 40 50 60 70 80
VDS Voltage (V)
DE275-101N30A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE275-101N30A
RF Power MOSFET
101N30A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/DE275-101N30A.html *SYM=POWMOSN .SUBCKT 101N09A 10 20 30 * TERMINALS: D G S * 100 Volt 30 Amp .05 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .05 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M) .ENDS
Doc #9200-0242 Rev 1 (c) 2009 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com

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