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Freescale Semiconductor Technical Data
Document Number: MRF7S21150H Rev. 1, 4/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 44 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 17.5 dB Drain Efficiency -- 31% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Output Power * Pout @ 1 dB Compression Point w 150 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21150HR3 MRF7S21150HSR3
2110 - 2170 MHz, 44 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465- 06, STYLE 1 NI - 780 MRF7S21150HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S21150HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 147 W CW Case Temperature 75C, 45 W CW Symbol RJC Value (2,3) 0.33 0.37 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
MRF7S21150HR3 MRF7S21150HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 348 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1350 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1350 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.9 590 320 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4.5 0.1 2 2.7 5.4 0.15 2.7 -- 6.5 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 16.5 29 5.7 -- -- 17.5 31 6.1 - 37 - 15 19.5 -- -- - 35 -9 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S21150HR3 MRF7S21150HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit MHz -- 10 -- Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, 2110 - 2170 MHz Bandwidth Video Bandwidth @ 120 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 44 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 150 W CW Average Group Delay @ Pout = 150 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 150 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) VBW
GF Delay G P1dB
-- -- -- -- -- --
0.418 36.5 2.82 1.45 0.013 0.007
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS C6 R2 C9 Z27 Z26 Z29 R3 RF INPUT Z1 Z25 Z2 Z3 Z4 Z5 C1 C4 Z6 Z7 Z8 Z9 DUT Z31 Z32 Z14 C12 C5 C3 Z10 Z11 Z12 Z13 Z15 Z16 Z17 Z18 Z19 Z20 RF Z21 Z22 Z23 Z24 OUTPUT Z28 + Z30 C8 C11 VSUPPLY
C2
R4 C10 C7
Z1 Z2 Z3 Z4* Z5* Z6 Z7 Z8 Z9 Z10 Z11
0.980 x 0.138 Microstrip 0.461 x 0.066 Microstrip 0.534 x 0.458 Microstrip 0.138 x 0.126 Microstrip 0.536 x 0.126 Microstrip 0.147 x 0.126 Microstrip 0.060 x 0.513 Microstrip 0.151 x 0.630 Microstrip 0.112 x 0.630 Microstrip 0.337 x 0.957 Microstrip 0.176 x 0.957 Microstrip
Z12 Z13 Z14 Z15* Z16* Z17* Z18 Z19 Z20, Z21 Z22 Z23
0.178 x 0.067 Microstrip 0.039 x 0.095 Microstrip 0.079 x 0.060 Microstrip 0.168 x 0.095 Microstrip 0.113 x 0.095 Microstrip 0.128 x 0.095 Microstrip 0.079 x 0.215 Microstrip 0.020 x 0.095 Microstrip 0.070 x 0.215 Microstrip 0.392 x 0.067 Microstrip 0.370 x 0.089 Microstrip
Z24 Z25 Z26 Z27 Z28 Z29, Z31 Z30, Z32 PCB
0.096 x 0.138 Microstrip 0.335 x 0.066 Microstrip 0.069 x 0.080 Microstrip 0.466 x 0.040 Microstrip R = 0.526 = 60 Microstrip Butterfly 0.825 x 0.066 Microstrip R = 0.526 = 60 Microstrip Butterfly Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 1. MRF7S21150HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21150HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2, C3 C4, C12 C5 C6, C7, C8 C9, C10 C11 R1, R2 R3 R4 Description 0.7 pF Chip Capacitor 6.8 pF Chip Capacitors 0.2 pF Chip Capacitors 0.3 pF Chip Capacitor 10 F Chip Capacitors 100 nF Chip Capacitors 220 F, 63 V Electrolytic Capacitor, Axial 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor 2.2 , 1/4 W Chip Resistor Part Number ATC100B0R7BT500XT ATC100B6R8BT500XT ATC100B0R2BT500XT ATC100B0R3BT500XT C5750X5R1H106M C1206C104K2RAC 222212018221 CRCW12061002FKEA CRCW120610R0FKEA CRCW12062R20FKEA ATC ATC ATC ATC TDK Kemet Vishay BC Components Vishay Vishay Vishay Manufacturer
MRF7S21150HR3 MRF7S21150HSR3 4 RF Device Data Freescale Semiconductor
VGS C8 VDD C6 R1 R2 R3 C11
C9
CUT OUT AREA
C2 C12 C5 C3
C4
C1
MRF7S21150H/S Rev. 7
R4 C10 C7
Figure 2. MRF7S21150HR3(HSR3) Test Circuit Component Layout
MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D Gps D, DRAIN EFFICIENCY (%) 18 17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 14 13.5 13 2060 2080 PARC IRL 2100 2120 2140 2160 2180 2200 VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1350 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 33 32 31 30 29 0 -0.5 -1 -1.5 -2 -2.5 2220 PARC (dB)
-4 -8 -12 -16 -20 -24
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 44 Watts Avg.
D, DRAIN EFFICIENCY (%) 18 17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 14 13.5 13 2060 PARC IRL 2080 2100 2120 2140 2160 2180 2200 D 42 41 40 39 38 VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1350 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 37 -2.5 -3 -3.5 -4 -4.5 2220 PARC (dB) -5 -10 -15 -20 -25
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 75 Watts Avg.
19 18 Gps, POWER GAIN (dB) 17 16 15 675 mA 14 13 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 1690 mA 1350 mA 1010 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2020 mA -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20
-30
IDQ = 675 mA 2020 mA
-40 1010 mA 1690 mA -50 1350 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S21150HR3 MRF7S21150HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
Gps
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 5th Order -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 7th Order 100 300 VDD = 28 Vdc, IDQ = 1350 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 0 -10 -20 IM3-U -30 IM5-U -40 -50 -60 1 IM5-L IM7-U IM7-L 10 TWO-TONE SPACING (MHz) 80 IM3-L VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1350 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz
3rd Order
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -3 -4 -5 20 30 40 50 60 -1 dB = 39.58 W -2 dB = 54.29 W
Figure 8. Intermodulation Distortion Products versus Tone Spacing
45 Ideal 40 35 30 25 Actual 20 15 80
-3 dB = 72.73 W VDD = 28 Vdc, IDQ = 1350 mA f = 2140 MHz, Input Signal PAR = 7.5 dB 70
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc)
-30 -35 -40
Gps, POWER GAIN (dB)
Uncorrected, Upper and Lower
17 16 15 14 13
85_C
40 30 20 VDD = 28 Vdc IDQ = 1350 mA f = 2140 MHz 10 100 10 0 300
-45 DPD Corrected No Memory Correction -50 -55 -60 -65 38 DPD Corrected with Memory Correction 40 42 44 46 48 50
D 1
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 7
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz Single-Carrier W-CDMA, Input Signal PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz, Integrated Bandwidth
19 -30_C 18 Gps TC = -30_C 25_C
D, DRAIN EFFICIENCY (%)
60 25_C 85_C 50
TYPICAL CHARACTERISTICS
18 IDQ = 1350 mA f = 2140 MHz Gps, POWER GAIN (dB) 17 MTTF (HOURS) VDD = 24 V 14 0 100 28 V 200 32 V 300 107 108
16
106
15
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 44 W Avg., and D = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21150HR3 MRF7S21150HSR3 8 RF Device Data Freescale Semiconductor
Zo = 10
f = 2220 MHz Zload
f = 2060 MHz f = 2060 MHz
Zsource
f = 2220 MHz
VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 2.72 - j5.08 3.10 - j5.17 3.43 - j5.39 3.66 - j5.74 3.72 - j6.17 3.59 - j6.59 3.33 - j6.91 2.98 - j7.10 2.62 - j7.17 Zload W 1.14 - j2.89 1.11 - j2.75 1.08 - j2.62 1.04 - j2.50 1.00 - j2.39 0.96 - j2.28 0.93 - j2.17 0.89 - j2.05 0.86 - j1.93
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
61 60 59 58 57 56 55 54 53 52 51 50 49 31 32
Ideal P6dB = 54.68 dBm (294 W) P3dB = 54.05 dBm (254 W) P1dB = 53.1 dBm (200 W) Actual
62 61 60 59 58 57 56 55 54 53 52 51 50 43 32 33 34 35
P6dB = 55.47 dBm (352 W) P3dB = 54.94 dBm (311 W) P1dB = 54.1 dBm (257 W)
Ideal
Actual
VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW 12 sec(on), 10% Duty Cycle, f = 2140 MHz 33 34 35 36 37 38 39 40 41 42
VDD = 32 Vdc, IDQ = 1350 mA, Pulsed CW 12 sec(on), 10% Duty Cycle, f = 2140 MHz 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V Test Impedances per Compression Level Zsource P3dB 4.66 - j8.05 Zload 0.53 - j2.26 P3dB
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 32 V Test Impedances per Compression Level Zsource 4.66 - j8.05 Zload 0.64 - j2.17
Figure 17. Pulsed CW Output Power versus Input Power @ 28 V
Figure 18. Pulsed CW Output Power versus Input Power @ 32 V
MRF7S21150HR3 MRF7S21150HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S21150HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
CASE 465A - 06 ISSUE H NI - 780S MRF7S21150HSR3
MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Nov. 2007 Apr. 2009 * Initial Release of Data Sheet * Corrected ESD structures to reflect current testing results. Changed HBM from 3A to 1C, p. 2 * Updated Fig. 14, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal, to better represent production test signal, p. 8 Description
MRF7S21150HR3 MRF7S21150HSR3 12 RF Device Data Freescale Semiconductor
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MRF7S21150HR3 MRF7S21150HSR3
Document Number: RF Device Data MRF7S21150H Rev. 1, 4/2009 Freescale Semiconductor
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