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| IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (p=750 nm). The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 m. The photodiodes of S8381 series also have a height of 2.5 mm but are arrayed at a spacing of 25 m. The photodiodes are available in 3 different pixel quantities for each series, 128 (S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard window material. Features Applications Pixel pitch: 50 m (S8380 series) 25 m (S8381 series) Pixel height: 2.5 mm l High UV sensitivity with good stability l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Lower power consumption: 1 mW max. l Start pulse and clock pulses are CMOS logic compatible l High sensitivity in the IR and soft X-ray regions l Wide active area l Multichannel spectrophotometry l Image readout system s Equivalent circuit Start Clock Clock st 1 2 Digital shift register (MOS shift register) End of scan s Active area structure Active photodiode Active video Vss Saturation control gate Saturation control drain Dummy diode 1.0 m 400 m b a Dummy video 1.0 m Oxidation silicon KMPDC0020EA N type silicon P type silicon S8380 series: a=50 m, b=45 m S8381 series: a=25 m, b=20 m KMPDA0125EA s Absolute maximum ratings Parameter Input pulse (1, 2, st) voltage Power consumption*1 Operating temperature*2 Storage temperature *1: V=5.0 V *2: No condensation Symbol V P Topr Tstg Value 15 1 -40 to +65 -40 to +85 Unit V mW C C 2.5 mm 1 NMOS linear image sensor s Shape specifications S8380/S8381 series Unit mm g Parameter S8380-128Q S8380-256Q S8380-512Q S8381-256Q S8381-512Q S8381-1024Q Number of pixels 128 256 512 256 512 1024 Package length 31.75 40.6 31.75 40.6 Number of pin 22 22 Window material*3 Quartz Quartz Weight 3.0 3.5 3.0 3.5 *3: Fiber optic plate is available (excluding the S8380-128Q, S8381-256Q). s Specifications (Ta=25 C) Parameter Symbol Min. S8380 series Typ. Max. 50 2.5 Min. S8381 series Typ. Max. 25 2.5 200 to 1000 0.6 3 750 0.1 10 90 25 0.3 3 Unit m mm nm nm pA pF mlx * s pC % Pixel pitch Pixel height Spectral response range 200 to 1000 (10 % of peak) Peak sensitivity wavelength 750 p Photodiode dark current* 4 0.2 ID Photodiode capacitance*4 Cph 20 Saturation exposure* 4 *5 Esat 90 Saturation output charge* 4 Qsat 50 P h o to re s p o n s e n o n-u n ifo rm ity* 6 PRNU *4: Vb=2.0 V, V=5.0 V *5: 2856 K, tungsten lamp *6: 50% of saturation, excluding the start pixel and last pixel s Electrical characteristics (Ta=25 C) P a ra m e te r Clock pulse (1, 2) voltage S ym b o l C ondition High V1, V2 (H) Low V1, V2 (L) High Vs (H) Start pulse (st) voltage Low Vs (L) Video bias voltage*7 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd tr1, tr2 8 C lock pulse (1, 2) rise / fall tim e* tf1, tf2 Clock pulse (1, 2) pulse width tpw1, tpw2 Start pulse (st) rise / fall time trs, tfs Start pulse (st) pulse width tpws Start pulse (st) and clock pulse tov (2) overlap 8 Clock pulse space* X1, X2 Data rate* 9 f Min. 4.5 0 4.5 0 1.5 200 200 200 S8380 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb 20 20 Min. 4.5 0 4.5 0 1.5 200 200 200 S8381 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb 20 20 Unit V V V V V V V ns ns ns ns ns trf - 20 trf - 20 ns 0.1 2000 0.1 2000 kHz 50 % of 80 (-128 Q) 100 (-256 Q) ns saturation 120 (-256 Q) 150 (-512 Q) Video delay time tvd ns *9 *10 160 (-512 Q) 200 (-1024 Q) ns 21 (-128 Q) 27 (-256 Q) pF Clock pulse (1, 2) 5 V bias C 36 (-256 Q) 50 (-512 Q) pF line capacitance 67 (-512 Q) 100 (-1024 Q) pF 12 (-128 Q) 14 (-256 Q) pF Saturation control gate (Vscg) Cscg 5 V bias 20 (-256 Q) 24 (-512 Q) pF line capacitance 35 (-512 Q) 45 (-1024 Q) pF 7 (-128 Q) 10 (-256 Q) pF Video line capacitance CV 2 V bias 11 (-256 Q) 16 (-512 Q) pF 20 (-512 Q) 30 (-1024 Q) pF *7: V is input pulse voltage (refer to "sVideo bias voltage margin"). *8: trf is the clock pulse rise or fall time. A clock pulse space of "rise time/fall time - 20 " ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns (refer to "sTiming chart for driver circuit"). *9: Vb=2.0 V, V=5.0 V *10: Measured with C7883 driver circuit. 2 NMOS linear image sensor s Dimensional outlines (unit: mm) S8380-128Q, S8381-256Q Active area 6.4 x 2.5 3.2 0.3 1 ch 10.4 0.25 S8380/S8381 series S8380-256Q, S8381-512Q Active area 12.8 x 2.5 6.4 0.3 1 ch 10.4 0.25 5.2 0.2 31.75 0.3 Direction of scan 31.75 0.3 Chip surface Direction of scan 0.5 0.05* 3 5.2 0.2 Chip surface 0.5 0.05* 3 1.3 0.2*1 3.0 0.3 1.4 0.2*2 1.3 0.2*1 3.0 0.3 0.51 0.05 5.0 0.5 0.25 0.51 0.05 5.0 0.5 0.25 2.54 0.13 25.4 0.13 10.16 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from chip surface to bottom of package *3: Window thickness 2.54 0.13 25.4 0.13 10.16 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from chip surface to bottom of package *3: Window thickness KMPDA0060ED KMPDA0061ED S8380-512Q, S8381-1024Q Active area 25.6 x 2.5 12.8 0.3 1 ch 10.4 0.25 s Pin connection 2 1 st Vss Vscg NC Vscd Chip surface 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 NC NC NC NC NC NC NC NC NC NC End of scan 40.6 0.3 Direction of scan 5.2 0.2 Vss Active video 0.5 0.05*3 1.3 0.2*1 3.0 0.3 1.4 0.2*2 Dummy video Vsub 0.51 0.05 5.0 0.5 0.25 Vss, Vsub and NC should be grounded. KMPDC0056EA 2.54 0.13 25.4 0.13 10.16 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from chip surface to bottom of package *3: Window thickness KMPDA0062ED 1.4 0.2*2 3 NMOS linear image sensor s Recommended operating conditions Terminal 1, 2 st Vss Vscg Vscd Input or output Input (CMOS logic compatible) Input (CMOS logic compatible) Input Input S8380/S8381 series Active video Output Dummy video Vsub End of scan NC Output Output (CMOS logic compatible) - Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of 2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. Used for restricting blooming. This should be biased at a voltage equal to the video bias voltage. Video output signal. Connects to photodiode cathodes when the address is on. A positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. When the amplitude of 1 and 2 is 5 V, a video bias voltage of 2 V is recommended. This has the same structure as the active video, but is not connected to photodiodes, so only spike noise is output. This should be biased at a voltage equal to the active video or left as an open-circuit when not needed. Connected to the silicon substrate. This should be grounded. This should be pulled up at 5 V by using a 10 k resistor. This is a negative going pulse that appears synchronously with the 2 timing right after the last photodiode is addressed. Should be grounded. s Spectral response (typical example) 0.5 IR high-sensitivity type S8380/S8381 series 0.4 (Ta=25 C) s Output charge vs. exposure 102 (Typ. Vb=2 V, V =5 V, light source: 2856 K) 101 Saturation charge S8380 series Photo sensitivity (A/W) Output charge (pC) 0.3 100 S8381 series 10 -1 0.2 Saturation exposure 0.1 Standard type 0 200 10 -2 400 600 800 1000 1200 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Wavelength (nm) KMPDB0161EA Exposure (lx * s) KMPDB0162EB s Timing chart for driver circuit st 1 2 V s (H) V s (L) V V V V 1 (H) 1 (L) 2 (H) 2 (L) tpw s tpw 1 tpw 2 tvd Active video output s Video bias voltage margin 10 8 Video bias voltage (V) 6 End of scan Re 4 co mm en d de bia s x Ma . tr s st tf s Video bias range 2 Min. tr 1 tf 1 1 X1 2 t ov tr 2 X2 tf 2 0 4 5 6 7 8 9 10 Clock pulse amplitude (V) KMPDC0022EA KMPDB0043EA HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. (c)2010 Hamamatsu Photonics K.K. U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMPD1045E02 Jul. 2010 DN |
Price & Availability of S838010
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