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| 2N7002K -- N-Channel Enhancement Mode Field Effect Transistor March 2010 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Absolute Maximum Ratings * Symbol VDSS VDGR VGSS ID TJ TSTG Drain-Source Voltage TA = 25C unless otherwise noted Parameter Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current Continuous Pulsed Value 60 60 20 300 800 -55 to +150 -55 to +150 Units V V V mA C C Operating Junction Temperature Range Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RJA Parameter Total Device Dissipation Derating above TA = 25C Thermal Resistance, Junction to Ambient * Value 350 2.8 350 Units mW mW/C C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size (c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 1 www.fairchildsemi.com 2N7002K -- N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Symbol BVDSS IDSS IGSS VGS(th) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Test Condition VGS= 0V, ID=10uA VDS= 60V, VGS= 0V VDS= 60V, VGS= 0V, @TC = 125C VGS= 20V, VDS= 0V VDS = VGS, ID = 250uA MIN 60 MAX Units V Off Characteristics (Note1) 1.0 500 10 A A On Characteristics (Note1) Gate Threshold Voltage 1.0 2.5 2 4 1.5 1.2 200 V A mS RDS(ON) Satic Drain-Source On-Resistance VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) On-State Drain Current Forward Transconductance VGS = 10V, VDS= 7.5V VGS = 4.5V, VDS= 10V VDS = 10V, ID = 0.2A Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz 50 15 6 pF pF pF Switching Characteristics Turn-On Delay Time Turn-Off Delay Time VDD = 30V, IDSS = 200mA, RG = 10, VGS= 10V 5 30 ns Note1 : Short duration test pulse used to minimize self-heating effect. (c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 2 www.fairchildsemi.com 2N7002K -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 1. On-Region Characteristics 2.0 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 ID. DRAIN-SOURCE CURRENT(A) VGS = 10V 1.5 RDS(on), () DRANI-SOURCE ON-RESISTANCE VGS = 3V 2.5 4V 4.5V 5V 5V 4V 1.0 2.0 7V 6V 1.5 3V 0.5 1.0 10V 9V 8V 2V 0.0 0 2 4 6 8 10 0.5 0.0 0.2 0.4 0.6 0.8 1.0 VDS. DRAIN-SOURCE VOLTAGE (V) ID. DRAIN-SOURCE CURRENT(A) Figure 3. On-Resistance Variation with Temperature 3.0 Figure 4. On-Resistance Variation with Gate-Source Voltage RDS(on) () DRANI-SOURCE ON-RESISTANCE VDS = 10V ID = 500 mA 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 o 150 TJ. JUNCTION TEMPERATURE( C) Figure 5. Transfer Characteristics 1.0 Figure 6. Gate Threshold Variation with Temperature Vth, Gate-Source Threshold Voltage (V) 2.0 ID. DRAIN-SOURCE CURRENT(A) VDS = 10V 0.8 o 25( C) o VDS = VGS 1.8 TJ = -25( C) 0.6 o ID = 1 mA 1.6 150( C) o ID = 0.25 mA 1.4 125( C) 0.4 75( C) 0.2 o 1.2 0.0 2 3 4 5 6 1.0 -50 0 50 100 o 150 VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) (c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 3 www.fairchildsemi.com 2N7002K -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continue) Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature VGS = 0 V IS Reverse Drain Current, [mA] 100 TA=150 C 10 o 25 C o -55 C o 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] (c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 4 www.fairchildsemi.com 2N7002K -- N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions SOT-23 Dimensions in Millimeters (c) 2010 Fairchild Semiconductor Corporation 2N7002K Rev. A2 5 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) (R) FAST FastvCore FETBench FlashWriter(R)* FPS F-PFS FRFET(R) SM Global Power Resource Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptoHiTTM OPTOLOGIC(R) (R) OPTOPLANAR (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START SPM(R) STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-LockTM (R) * The Power Franchise(R) TinyBoost TinyBuck TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * SerDes PDP SPMTM Power-SPM UHC Ultra FRFET UniFET VCX VisualMax XSTM (R) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 (c) Fairchild Semiconductor Corporation www.fairchildsemi.com |
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