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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1722 DESCRIPTION *With TO-220C package *High breakdown voltage *High transition frequency APPLICATIONS *Low frequency power amplifier *TV horizontal/vertical driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 12.5 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.2 1.8 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1722 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE= 300 V V(BR)CBO Collector-base breakdown voltage IC=100A ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100A ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 2.0 V VBE Base-emitter on voltage IC=50m A ; VCE=10V 0.68 0.9 V A ICBO Collector cut-off current VCB=250V ;IE=0 0.1 ICEO Collector cut-off current VCE=250V; RBE= 2 A hFE DC current gain IC=50m A ; VCE=10V 50 300 fT Transition frequency IC=30m A ; VCE=20V 80 MHz COB Output capacitance IE=0 ; VCB=50V; f=1MHz 4.3 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1722 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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