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| 2SC4116 General Purpose Transistor NPN Silicon P b Lead(Pb)-Free 1 BASE COLLECTOR 3 3 1 2 FEATURES * High voltage and high current * Excellent h FE linearity * High h FE * Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Junction and Storage Temperature 2 EMITTER SOT-323(SC-70) Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 60 50 5 150 100 150 -55 to +150 Units V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions MIN 60 50 5 70 80 TYP MAX 0.1 0.1 700 0.25 3.5 10 V MHz pF dB UNIT V V V A A IC=100A,IE=0 IC=1mA,IB=0 IE=100A,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=2mA IC=100mA,IB=10mA VCE=10V,IC=1mA, VCB=10V,IE=0,f=1MHz VCE=6V,Ic=0.1mA, f=1KHZ,Rg=10K CLASSIFICATION OF hFE Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 25-Jun-08 2SC4116 WEITRON W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/3 25-Jun-08 2SC4116 WEITRON WEIT R ON h tt p :// w w w . w eit r o n . c o m . tw 3/3 25-Jun-08 |
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