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FDC365P P-Channel PowerTrench(R) MOSFET
November 2007
FDC365P
P-Channel PowerTrench(R) MOSFET
-35V, -4.3A, 55m
Features
Max rDS(on) = 55m at VGS = -10V, ID = -4.2A Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2A RoHS Compliant
tm
General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications
Inverter Power Supplies
S D D D G D Pin 1 D SuperSOTTM -6 G 3 4 S 2 5 D D 1 6 D
MOSFET Maximum Ratings TC = 25C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -35 20 -4.3 -20 1.6 0.8 -55 to +150 Units V V A W C
Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 C/W
Package Marking and Ordering Information
Device Marking .365P Device FDC365P Package SSOT6 Reel Size 7'' Tape Width 8mm Quantity 3000 units
(c)2007 Fairchild Semiconductor Corporation FDC365P Rev.C
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FDC365P P-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -28V, VGS = 0V VGS = 20V, VDS = 0V -35 -26 -1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.2A VGS = -10V, ID = -4.2A, TJ = 125C VDS = -10V, ID = -4.2A -1 -1.8 5.0 45 70 69 8.7 55 80 90 S m -3 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 530 105 55 6.1 705 135 80 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -20V, ID = -4.2A VDD = -20V, ID = -4.2A, VGS = -10V, RGEN = 6 7 3 15 3 11 6 1.7 2.2 13 10 28 10 15 9 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.3A (Note 2) -0.8 16 7 -1.2 29 14 V ns nC IF = -4.2A, di/dt = 100A/s
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 78C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board. b. 156C/W when mounted on minimum pad of 2 oz copper. a
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
(c)2007 Fairchild Semiconductor Corporation FDC365P Rev.C
2
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FDC365P P-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
20
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4.5V VGS = -4V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = -10V
4.0 3.5 3.0
VGS = -3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -3V
16 12 8
2.5
VGS = -4V
2.0 1.5 1.0
VGS = -10V VGS = -4.5V
VGS = -3.5V
4
VGS = -3V
0 0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 4 8 12 -ID, DRAIN CURRENT(A) 16 20
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
200
SOURCE ON-RESISTANCE (m)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -75
ID = - 4.2A VGS = -10V
ID = -4.2A
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
160 120
TJ = 125oC
rDS(on), DRAIN TO
80 40 0
TJ = 25oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
20
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
20 10
VGS = 0V
16
VDS = -5V
1
TJ = 150oC
12 8
TJ = 150oC
0.1
TJ = 25oC
4
TJ = 25oC
0.01
TJ = -55oC
0 1 2
TJ = -55oC
3
4
5
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2007 Fairchild Semiconductor Corporation FDC365P Rev.C
3
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FDC365P P-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
10
-VGS, GATE TO SOURCE VOLTAGE(V) ID = -4.2A
1000
8
VDD = -20V
6
VDD = -15V
VDD = -25V
4 2 0 0 3 6
Qg, GATE CHARGE(nC)
CAPACITANCE (pF)
Ciss
100
f = 1MHz VGS = 0V
Coss
Crss
9
12
30 0.1
1
10
35
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
400
P(PK), PEAK TRANSIENT POWER (W)
30
-ID, DRAIN CURRENT (A)
10
0.1ms
VGS = -10V
SINGLE PULSE RJA = 156 C/W TA = 25 C
o o
100
1ms
1
THIS AREA IS LIMITED BY rDS(on)
10ms
100ms
10
0.1
SINGLE PULSE TJ = MAX RATED = 156oC/W R
JA
1s 10s DC
TA = 25oC
1
0.5 -4 10
0.01 0.1
1
10
100
10
-3
10
-2
10
-1
1
10
100
1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 9. Forward Bias Safe Operating Area
2
Figure 10. Single Pulse Maximum Power Dissipation
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 156 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Transient Thermal Response Curve
(c)2007 Fairchild Semiconductor Corporation FDC365P Rev.C
4
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FDC365P P-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
(c)2007 Fairchild Semiconductor Corporation FDC365P Rev.C
5
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Preliminary Datasheet
FDC365P P-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
tm
Rev. I31
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2007 Fairchild Semiconductor Corporation FDC365P Rev.C
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