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N-Channel MOS FET
FKP253
Features
Low on-resistance Low input capacitance Avalanche energy capability guaranteed
June, 2007
Package---FM20 (TO220 Full Mold)
Applications
PDP driving High speed switching
Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25C Parameter
Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature
Symbol VDSS VGSS ID ID(pulse) *1 PD EAS *2 IAS Tch Tstg
Rating 250 30 20A 80A 40 (Tc=25C) 160 20 150 55 to 150
Unit V V A A W mJ A C C
*1 PW100sduty cycle% *2 VDD=20V, L=740HILp=20A, unclamped, RG=50, See Fig.1
Sanken Electric Co., Ltd.
http://www.sanken-ele.co.jp/en/
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T02-009EA-070531
N-Channel MOS FET
FKP253
Electrical characteristics
Parameter Symbol Test Conditions
June, 2007
(Ta=25C Limits MIN. 250 100 100 3.0 8 17 86 1600 280 50 30 ID=10A, VDD120V RL=12, VGS=10V RG=5 See Fig.2 45 ISD=20A,VGS=0V ISD=20A,VGS=0V di/dt=100A/s 1.0 140 1.5 V ns 60 ns 80 pF 95 4.5 TYP. MAX. Unit V nA A V S m
Drain to Source breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Diode Forward Voltage Source-Drain Diode Reverse Recovery Time
V(BR)DSS IGSS IDSS VTH Re(Yfs) RDS(on) Ciss Coss Crss
ID=100A,VGS=0V VGS=30V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V VDS=25V VGS=0V f=1MHz
td(on) tr td(off) tf
VSD
trr
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
Characteristic Curves
ID- VDS C h a r a c t er ist ic s (t y pica l)
20 VGS=10V 6.5V 6.0V
June, 2007
(Tc=25)
ID-VG S C ha r a ct er ist ics (t y pica l)
VDS=10V
20
ID (A)
10 5.5V
ID (A)
10
125 25
5.0V
Tc=55
0 0 2 4 VDS (V) 6 8 10
0 0 2 4 VGS (V) 6 8 10
RDS (ON)-ID C ha r a ct er ist ics (t y p ica l)
0.12 VGS=10V
VDS -VG S C ha r a ct er ist ics (t y pica l)
4
0.10
3
0.08 RDS(ON) ()
0.06
VDS (V)
2 ID=20A
0.04
1
0.02
10A
0.00 0 10 ID (A) 20
0 1 10 VGS (V) 100
R DS (ON)- Tc C ha r a ct er ist ics (t y p ic a l)
0.25
ID=10A VGS=10V
0.20
RDS(ON) ()
0.15
0.10
0.05
0.00 -100 -50 0 Tc () 50 100 150
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
Characteristic Curves
R e(y fs)-ID C ha r a c t er ist ics (t y pica l)
VDS=10V 100
June, 2007
(Tc=25)
C a p a cit a nce-VDS C ha r a ct er ist ics (t y pica l)
f=1MHz VGS=0V
10000
10
Ciss
Re( yfs) (S)
Tc=55 1 125
1000 Capacitance (pF)
25
Coss
0.1
100 Crss
0.01 0.01
0.1
1 ID (A)
10
100
10
IDR -VS D C ha r a ct er ist ics (t y pica l)
20
0
10
20 VDS (V)
30
40
50
SAFE OPERATING AREA
100
ID(pulse) max
IDR (A)
10
10
ID max 100s(1shot)
VGS=10V 0V
RDS(on) LIMITED
1 ID [A]
1ms (1shot)
0 0 0.5 VSD (V) 1 1.5
0.1
Tc=25
P D-Ta C ha r a ct er ist ics
50
0.01
DC OPERATION
0.001 0.1 1
40 With infinite heatsink 30 PD (W)
10 VDS [V]
100
1000
20
10 Without heatsink 0 0 50 Ta () 100 150
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
Fig.1 Unclamped Inductive Test Method EAS=
V(BR)DSS VDS ILp RG VGS 0V VDD IL VDD VDS L
June, 2007
1 V(BR)DSS *L*ILP2* 2 V(BR)DSS - VDD
IL
(a) Test Circuit
(b) Waveforms
Fig.2
Switching Time Test Method
RL
ID VDS RG VGS 0V P.W.=10s Duty cycle1% VDD
VDD120V ID=10A RL=12 VGS=10V RG=5
(a) Test Circuit
90% VGS 10%
90% VDS 10% td(on) ton tr td(off) toff tf
(b) Waveforms
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
External dimensions
FM20 (TO220 Full Mold)
June, 2007
(1)
(2)
(3)
(1) Gate (2) Drain (3) Source
Weight Approx. 2g
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261
June, 2007
India
Saket Devices Pvt. Ltd. Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Tel: 91-20-5621-2340 91-20-2528-5449 Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720 Tel: 65-6291-4755 Fax: 65-6297-1744
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
Europe
United Kingdom
Sanken Power Systems (UK) Limited Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK Tel: 44-1656-869-100 Fax: 44-1656-869-162
June, 2007
North America
United States
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000 Fax: 1-508-853-3353 Allegro MicroSystems, Inc. (Southern California) 14 Hughes Street, Suite B105, Irvine, CA 92618 Tel: 1-949-460-2003 Fax: 1-949-460-7837
Sanken Electric Co., Ltd.
T02-009EA-070531
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N-Channel MOS FET
FKP253
CAUTION / WARNING
June, 2007
The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users' responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user's written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken. This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following: 1. Resell or retransfer these products/technology to any party intending to disturb international peace and security. 2. Use these products/technology yourself for activities disturbing international peace and security. 3. Allow any other party to use these products/technology for activities disturbing international peace and security. Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad.
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