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| LL4448 Features * Silicon epitaxial planar diode * Fast switching diodes * 500mW power dissipation * This diode is also available in the DO-35 case with the type designation 1N4448 SMALL SIGNAL SWITCHING DIODES MELF (DO-35) SOLDERABLE ENDS 0.020(0.50) 0.011(0.28) Mechanical Data * Case: MiniMELF glass case (DO-35) * Weight: Approx. 0.05 gram 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.051(1.30) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25E ambient temperature unless otherwise specified) Reverse Voltage Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25E and FA50Hz Surge forward current at t<1S and TJ=25E Power dissipation at TA=25E Junction temperature Storage temperature range Symbol VR VRM IAV IFSM Ptot TJ TSTG Value 75 100 1501) 500 5001) 175 -65 to +175 Units Volts Volts mA mA mW E E 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Electrical characteristics (Ratings at 25E ambient temperature unless otherwise specified) Forward voltage Leakage current at IF=5mA at IF=10mA at VR=20V at VR=75V at VR=20V, TJ=150E Junction Capacitance at VR=VF=0V Reverse breakdown voltage tested with 100iA Pulse Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100O Thermal resistance, junction to Ambient Rectification efficiency at f=100MHz, VRF=2V Symbols VF VF IR IR IR CJ V(BR)R trr Re JA Min. Typ. Max. 0.72 1 25 5 50 4 Units V V nA iA iA pF V 100 4 3501) 0.45 ns K/W c 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) RATINGS AND CHARACTERISTIC CURVES LL4448 FIG.1-FORWARD CHARACTERISTICS mA 103 FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT O 104 TJ= 25E f=1KHz 102 103 TJ=100E 10 TJ=25E IF rF 102 1 10-1 10 10-2 0 1 2V 1 10-2 10-1 1 10 102 mA VF IF FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE mW 1000 900 800 700 FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE 1.1 TJ= 25E f=1MHz Ctot(VR) Ctot(OV) 1.0 Ptot 600 500 400 300 200 100 0 0 100 200 E 0.9 0.8 0.7 0 2 4 6 8 10V TA VR RATINGS AND CHARACTERISTIC CURVES LL4448 FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 104 D.U.T. 60 O VRF=2V 2nF 5KO VO 103 102 10 VR= 50V 1 0 100 200 E FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM 10 0.1 n=0 T=1/fp IFRM tp T 0.2 1 0.5 0.1 10-5 10-4 10-3 10-2 10-1 1 10S tp |
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