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| MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401W .087(2.2) .070(1.8) .054(1.35) .045(1.15) 40V POWER 200mW SOT-323 Unit: inch (mm) .004(.10)MIN. In compliance with EU RoHS 2002/95/EC directives .056(1.40) .047(1.20) .006(.15) .002(.05) MECHANICAL DATA .004(.10)MAX. Case: SOT-323 Terminals: Solderable per MIL-STD-750, Method 2026 Approx Weight: 0.005gram Marking: M3W Top View 3 Collector 1 BASE 3 COLLECTOR .016(.40) .008(.20) 1 Base 2 Emitter 2 EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range VCE0 VCB0 VEB0 IC PTOT TJ, TSTG -40 -40 -5.0 -600 200 -55 to 150 .044(1.1) .035(0.9) .087(2.2) .078(2.0) V V V mA mW THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Thermal Resistance , Junction to Ambient (Note 1) RJ A 625 /W Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad. REV.0.1-MAR.5.2009 PAGE . 1 MMBT4403W ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise noted) PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CEO IC=-1.0mA, IB=0 V(BR)CBO IC=-100uA, IE=0 V(BR)EBO IE=-100uA, IC=0 IBEV ICEX VCE=-35V, VEB=-0.4V VCE=-35V, VEB=-0.4V IC=-0.1mA, VCE=-1.0V IC=-1.0mA, VCE=-1.0V -40 -40 -5.0 30 60 100 100 20 -0.75 200 - - -100 -100 300 -0.4 -0.75 -0.95 -1.3 8.5 30 15 20 225 30 V V V nA nA DC Current Gain hFE IC=-10mA, VCE=-1.0V IC=-150mA, VCE=-2.0V IC=-500mA, VCE=-2.0V IC=-150mA, IB=-15 mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-20mA, VCE=-10V, f=100MHz VCB=-5.0V, IE=0, f=1MHz VCB=-0.5V, IC=0, f=1MHz VCC=-30V, VBE=-2.0V, IC=-150mA, IB1=-15mA VCC=-30V, IC=-150mA, IB1=IB2=15mA - Collector - Emitter Saturation Voltage VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf V Base - Emitter Saturation Voltage V Current-Gain - Bandwidth Product Collector - Base Capacitance Emitter - Base Capacitance Delay Time Rise Time Storage Time Fall Time MHz pF pF ns ns ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS -30V -30V 200 < 2ns 0 +2V 1.0K CS < 10pF 1N916 1 to 100us Duty Cycle = 2.0% 0 1N916 +4V <20ns +14V 200 1.0K CS < 10pF -16V 10 to 100ns Duty Cycle ~ 2.0% -16V Fig. 1. REV.0.1-MAR.5.2009 Turn-On Time Fig. 2. Turn-Off Time PAGE . 2 MMBT4403W ELECTRICAL CHARACTERISTICS CURVES 400 350 300 hFE 250 200 150 100 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25 C TJ = 150 C VCE = 10V 0.900 0.800 0.700 TJ = 25C TJ = 100 C VBE(on) 0.600 0.500 0.400 0.300 0.200 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 100C TJ =150C Fig. 3. Typical hFE vs Collector Current 0.500 0.450 0.400 IC/IB = 10 Fig. 4. Typical VBE vs Collector Current 100 CIB (EB) VCE(sat) 0.300 0.250 0.200 0.150 0.100 0.050 0.000 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25C TJ = 150C Capacitance (pF) 0.350 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage (V) Fig. 5. Typical VCE (sat) vs Collector Current Fig. 6. Typical Capacitances vs Reverse Voltage REV.0.1-MAR.5.2009 PAGE . 3 MMBT4403W MOUNTING PAD LAYOUT ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-MAR.5.2009 PAGE . 4 |
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