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PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA261702E Package H-30275-4 WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 25 Efficiency (%) 20 15 10 5 0 20 25 30 35 40 45 50 Output Power (dBm) Efficiency EVM: = 2.62 GHz EVM: = 2.68 GHz EVM: = 2.65 GHz -20 EVM (dBc) -25 -30 -35 -40 -45 Features * * * Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical WiMAX performance at 2650 MHz, 28 V - Average output power = 32 W - Linear gain = 15 dB - Efficiency = 20% - Error vector magnitude = -29 dB Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power * * * RF Characteristics WiMAX Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 32 W average = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz Characteristic Gain Drain Efficiency Error Vector Magnitude Symbol Gps Min -- -- -- Typ 15 20 -29 Max -- -- -- Unit dB % dB D EVM All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10 *See Infineon distributor for future availability. Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1800 mA, POUT = 170 W PEP, = 2650 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min 14 31 -- Typ 15 33 -30 Max -- -- -27 Unit dB % dBc D IMD DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 -- -- -- -- -- Typ -- -- -- 0.08 2.5 -- Max -- 1.0 10.0 -- -- 1.0 Unit V A A V A On-State Resistance Operating Gate Voltage Gate Leakage Current VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1800 mA VGS = 10 V, V DS = 0 V Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 170 W CW) TSTG RJC Symbol VDSS VGS TJ PD Value 65 -0.5 to +12 200 643 3.68 -40 to +150 0.272 Unit V V C W W/C C C/W Ordering Information Type and Version PTFA261702E V1 Package Type H-30275-4 Package Description Thermally-enhanced slotted flange, push-pull Marking PTFA261702E *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, = 2650 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -15 -20 EVM (dB) -25 -30 -35 -40 -45 20 25 30 35 40 45 50 Output Power (dBm) TCASE = 25C TCASE = 90C EVM (dB) WiMAX Performance VDD = 28 V, = 2650 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -20 -25 -30 -35 -40 -45 -50 15 20 25 30 35 IDQ = 1800 mA 40 45 50 IDQ = 2000 mA IDQ = 1600 mA Output Power (dBm) Gain vs. Output Power VDD = 28 V, = 2650 MHz Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 1800 mA 1 = 2619 MHz, 2 = 2620 MHz; -20 16.5 16.0 1 = 2679 MHz, 2 = 2680 MHz = 2680 MHz = 2620 MHz 3rd Order IDQ = 2200 mA IDQ = 1800 mA -30 Power Gain (dB) IMD (dBc) 15.5 15.0 14.5 14.0 41 43 45 47 49 51 53 -40 -50 -60 IDQ = 1400 mA 5th -70 38 40 42 7th 44 46 48 50 Output Power (dBm) Output Power, Avg. (dBm) Data Sheet 3 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Typical Performance (cont.) IS-95 CDMA Performance VDD = 28 V, IDQ = 1800 mA, = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF 30 -20 30 IS-95 CDMA Performance VDD = 28 V, IDQ = 1800 mA, = 2680 MHz, PAR = 9.8 dB @ 0.01 probability on CCDF TCASE = 25C TCASE = 90C Adj. Ch. Power Ratio (dBc) 25 -30 Drain Efficiency (%) 20 15 10 5 0 35 37 Adj 885 kHz Alt1 1.25 MHz Drain Efficiency (%) 24 18 Efficiency 12 6 0 35 37 39 41 Alt1 1.25 MHz 43 45 47 Adj 885 kHz -30 -35 -40 -45 -50 -55 -60 -65 -70 -40 -50 -60 -70 -80 39 41 43 45 47 Output Power (dBm), Avg. Output Power (dBm), Avg. CW Sweep in a Broadband Test Fixture VDD = 28 V, IDQ = 1800 mA, POUT = 50 dBm Output Power vs. Supply Voltage IDQ = 1800 mA, = 2680 MHz 19 18 40 35 53.0 Efficiency (%) 30 25 20 15 10 2600 Gain (dB) Efficiency 17 16 15 14 Output Power (dBm) 52.5 52.0 Gain 51.5 51.0 2620 2640 2660 2680 13 2700 23 25 27 29 31 33 Supply Voltage (V) Frequency (MHz) Data Sheet 4 of 10 Rev. 01.1, 2009-02-20 Adj. Ch. Power Ratio (dBc) Efficiency -20 -25 PTFA261702E Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep, CW Conditions VDD = 28 V, IDQ = 1800 mA, = 2680 MHz 18 17 16 60 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 1.03 0.37 A 1.11 A 1.85 A 2.78 A 5.56 A 8.34 A Normalized Bias Voltage (V) TCASE = 25C Drain Efficiency (%) TCASE = 90C Gain 50 40 30 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 Gain (dB) 15 14 13 12 11 10 10 Efficiency 20 10 210 50 90 130 170 Output Power (W) Case Temperature (C) Broadband Circuit Impedance Z0 = 50 Z Source Z Load D S G G Z Source 0.2 0.1 0.3 D 2600 MHz 2700 MHz Frequency MHz 2600 2620 2640 2660 2680 2700 R Z Source jX -1.2 -1.2 -1.1 -0.9 -0.8 -0.6 8.9 9.1 9.2 9.3 9.4 9.5 Z Load R 7.0 6.6 6.2 5.9 5.7 5.4 jX -11.9 -11.5 -11.2 -10.9 -10.5 -10.2 0. 2 Z Load 2700 MHz 2600 MHz Data Sheet 5 of 10 Rev. 01.1, 2009-02-20 0.4 Data Sheet VDD Reference Circuit C1 0.001F R2 1.3K V R1 1.2K V QQ1 LM7805 Q1 BCP56 C2 0.001F C3 0.001F Confidential, Limited Internal Distribution Reference circuit block diagram for = 2680 MHz l20 C7 0.1F R8 10 V C8 10F C9 3.3pF C15 3.3pF C16 2000pF R3 2K V R4 2K V R5 10 V VGG R6 1K V l19 l18 l34 l35 C17 1F l36 C18 2.2F C19 10F 50V VDD 6 of 10 l33 DUT C10 4.5pF C4 10F 35V C5 0.1F R7 1K V C6 0.1F l11 l13 l24 l10 C11 4.5pF l12 l14 l25 l15 l16 l17 C26 4.5pF l26 C25 0.3pF l27 l28 l29 l30 l43 C27 4.5pF l31 l32 RF_OUT RF_IN l1 l8 R9 10 V l2 l9 l3 l4 l5 l6 l7 l37 l38 l39 l40 l41 l42 l44 l45 C20 3.3pF C21 2000pF C12 0.1F l23 C13 10F C14 3.3pF l22 l21 l46 C22 1F l47 C23 2.2F C24 10F 50V VDD PTFA261702E Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information DUT PCB PTFA261702E 0.76 mm [.030"] thick, e r = 3.48 LDMOS Transistor Rogers RO4350 1 oz. copper Microstrip Microstrip l1 l2 l3 l4, l12, l28, l29, l41, l42 l5, l13 l6, l14 l7, l15 l8, l16 l9, l17 l10 l11 l18, l21 l19, l22 l20, l23, l24, l37 l25, l38 l26, l39 l27, l40 l30 l31 l32 l33, l44 l34, l45 l35, l46 l36, l47 l43 Electrical Characteristics at 2680 MHz 0.450 0.296 0.049 0.021 0.010 0.153 0.028 0.067 0.015 0.099 0.463 0.193 0.105 0.043 0.020 0.101 0.019 0.132 0.044 0.258 0.229 0.083 0.225 0.060 0.043 0.553 , 49.9 , 35.5 , 49.9 , 34.0 , 40.6 , 21.0 , 14.6 , 8.2 , 8.2 , 44.6 , 49.9 , 49.9 , 49.9 , 49.9 , 5.9 , 5.9 , 5.9 , 50.3 , 50.3 , 35.5 , 49.9 , 49.9 , 49.9 , 49.9 , 49.9 , 49.9 Dimensions: L x W (mm) Dimensions: L x W (mm) 30.45 x 1.70 19.56 x 2.84 3.30 x 1.70 1.40 x 3.02 0.69 x 2.34 9.80 x 5.66 1.78 x 8.81 4.11 x 16.94 0.94 x 16.94 6.65 x 2.03 31.32 x 1.70 13.06 x 1.70 7.11 x 1.70 2.92 x 1.70 1.24 x 24.16 6.17 x 24.16 1.19 x 24.16 8.97 x 1.68 2.95 x 1.68 17.04 x 2.84 15.52 x 1.70 5.64 x 1.70 15.24 x 1.70 4.06 x 1.70 2.92 x 1.70 37.44 x 1.70 Dimensions: L x W (in.) Dimensions: L x W (in.) 1.199 x 0.067 0.770 x 0.112 0.130 x 0.067 0.055 x 0.119 0.027 x 0.092 0.386 x 0.223 0.070 x 0.347 0.162 x 0.667 0.037 x 0.667 0.262 x 0.080 1.233 x 0.067 0.514 x 0.067 0.280 x 0.067 0.115 x 0.067 0.049 x 0.951 0.243 x 0.951 0.047 x 0.951 0.353 x 0.066 0.116 x 0.066 0.671 x 0.112 0.611 x 0.067 0.222 x 0.067 0.6 x 0.067 0.16 x 0.067 0.115 x 0.067 1.474 x 0.067 Data Sheet 7 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Reference Circuit (cont.) VDD R5 C5 R6 R7 QQ1 R4 C4 C3 R3 R1 R2 C1 C2 Q1 C7 C8 C9 C15 C19 VDD RF_OUT C18 C17 C16 C6 R8 C10 C25 C26 C27 C11 RO4350_.030 R9 A261702_01 C14 C21 C13 C12 C20 C24 V DD C22 C23 a26170e_cd_21508 - RF_IN Reference circuit assembly diagram (not to scale)* Component C1, C2, C3 C4 C5, C6, C7, C12 C8, C13 C9, C14, C15, C20 C10, C11, C26, C27 C16, C21 C17, C22 C18, C23 C19, C24 C25 Q1 QQ1 R1 R2 R3 R4 R5, R8, R9 R6, R7 Description Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Capacitor, 10 F Ceramic capacitor, 3.3 pF Ceramic capacitor, 4.5 pF Capacitor, 2000 pF Ceramic capacitor, 1 F Capacitor, 2.2 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 0.3 pF Transistor Voltage regulator Chip resistor 1.2K ohms Chip resistor 1.3K ohms Chip resistor 2K ohms Potentiometer 2K ohms Chip resistor 10 ohms Chip resistor 1K ohms Suggested Manufacturer Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC Digi-Key Digi-Key Garrett Electronics ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 490-1819-2-ND 100B 3R3 100B 4R5 100B 203JW 445-1411-2-ND 445-1447-2-ND TPSE106K050R0400 100B 0R3 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND *Gerber files for this circuit available on request. Data Sheet 8 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Package Outline Specifications Package H-30275-4 2X 455 X 1.19 [.047] C L 13.72 [.540] C L 2X R 1.59 [.063] D 16.610.51 [.654.020] 9.40 +0.10 -0.15 [.370 +.004 ] -.006 D C L 2X 3.18 [.125] LID 9.14 -0.15 [.360 +.004 ] -.006 +0.10 S 4X 3.230.25 [.127.010] Flange 10.16 [.400] G G 4X 11.68 [.460] 35.56 [1.400] 31.240.28 [1.230.011] C L 1.63 [.064] 4.550.38 [.179.015] 0.038 [.0015] -AH-30275-4_po_8-1-2007 41.15 [1.620] 2.18 [.086] SPH Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.13 +0.051/-0.025 [.005 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 01.1, 2009-02-20 PTFA261702E Confidential, Limited Internal Distribution Revision History: 2009-02-20 Previous Version: none Page Subjects (major changes since last revision) 8 4-10 to 14 Fixed typing error Refine existing frames, new frames for final page. Misc updates. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS(R) is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 01.1, 2009-02-20 |
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