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Ordering number : ENA0381 TF250TH SANYO Semiconductors DATA SHEET TF250TH Features * * * * * N-channel Silicon Junction FET Electret Condenser Microphone Applications Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100A VDS=2V, ID=1A VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz Ratings min --20 --0.1 140* 0.7 1.3 2.8 0.55 --0.4 --1.0 350* typ max Unit V V A mS pF pF Marking: C * : The TF250TH is classified by IDSS as follows : (unit : A) Continued on next page. Rank IDSS 4 140 to 240 5 210 to 350 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82506GB MS IM TC-00000099 No. A0381-1/4 TF250TH Continued from preceding page. Parameter Symbol Conditions Ratings min typ 0.8 --0.7 0.6 --100 --2.0 --1.0 max Unit [Ta=25C, VCC=2V, RL=2.2k, Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage GV GVV Gvf THD VNO VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=21.5V f=1kHz to 110Hz VIN=30mV, f=1kHz VIN=0V, A curve dB dB dB % dB Package Dimensions unit : mm (typ) 7031-001 Top View 1.4 Test Circuit 0.2 0.25 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 3 1.2 0.8 2.2k VCC=2V VCC=1.5V 1 0.2 2 0.2 0.45 5pF 0.1 33F + 0.34 VTVM V THD OSC Bottom View 0.07 0.07 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 300 ID -- VDS V GS=0V Drain Current, ID -- A 300 ID -- VDS V GS= 0V 250 250 Drain Current, ID -- A 200 200 --0.1V 150 150 --0.1V 100 100 --0.2V 50 50 --0.2V --0.3V 0 0 0.5 1.0 1.5 --0.4V 0 2.0 IT10917 0 1 2 3 --0.3V 4 --0.4V 5 IT10918 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No. A0381-2/4 TF250TH 400 350 ID -- VGS VDS=2V 400 350 ID -- VGS VDS=2V Drain Current, ID -- A 250 200 150 100 50 0 --0.7 Drain Current, ID -- A 300 300 250 200 50 A 0 A 15 0 A C 150 100 50 0 --0.7 S =3 --0.6 --0.5 --0.4 --0.3 ID S --0.2 --0.1 0 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 --2 5C 0 IT10920 500 IT10922 2 3 IT10924 500 IT10926 75 Gate-to-Source Voltage, VGS -- V 2.0 yfs -- IDSS IT10919 --0.7 Gate-to-Source Voltage, VGS -- V VGS(off) -- IDSS Ta = --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 100 25 Forward Transfer Admittance, yfs -- mS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 100 Drain Current, IDSS -- A 200 300 400 500 IT10921 1.0 Cutoff Voltage, VGS(off) -- V VDS=2V VGS=0V f=1kHz 10 Ciss -- VDS Drain Current, IDSS -- A 200 300 400 Crss -- VDS Reverse Transfer Capacitance, Crss -- pF VGS=0V f=1MHz 7 7 Input Capacitance, Ciss -- pF 5 5 3 3 2 2 1.0 5 7 1.0 2 3 5 7 10 2 3 0.1 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 1.4 1.2 1.0 IT10923 0 GV -- IDSS Drain-to-Source Voltage, VDS -- V GVV -- IDSS Voltage Gain, GV -- dB 0.8 0.6 0.4 0.2 0 --0.2 --0.4 --0.6 0 GV : VCC=2V VIN=10mV f=1kHz RL=2.2k Cin=5pF IDSS : VDS=2V Reduced Voltage Characteristic, GVV -- dB --0.2 GVV : VCC=2V1.5V VIN=10mV f=1kHz IDSS : VDS=2V --0.4 --0.6 --0.8 --1.0 --1.2 0 100 100 Drain Current, IDSS -- A 200 300 400 500 IT10925 Drain Current, IDSS -- A 200 300 400 No. A0381-3/4 25 C VDS=2V ID=1A VGS=0V f=1MHz TF250TH 100 THD -- VIN Total Harmonic Distortion, THD -- % THD : VCC=2V f=1kHz IDSS : VDS=2V 1.4 THD -- IDSS THD : VCC=2V VIN=30mV f=1kHz IDSS : VDS=2V Total Harmonic Distortion, THD -- % 1.2 1.0 10 150A I DSS= 250A 0.8 350A 1.0 0.6 0.4 0.2 0 0.1 0 50 100 150 200 IT10927 0 100 Input Voltage, VIN -- mV 120 PD -- Ta Drain Current, IDSS -- A 200 300 400 500 IT10928 Allowable Power Dissipation, PD -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10929 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No. A0381-4/4 |
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