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| CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: IF from 100mA max to 200mA max. SOD-523 CASE BVR from 30V min to 40Vmin. VF from 1.0V max to 0.8V max. Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25C) SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg JA 40 200 350 750 250 -65 to +150 500 UNITS V mA mA mA mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=25V 90 IR VR=25V, TA=100C 25 IR=100A 40 50 BVR VF IF=2.0mA 0.29 IF=15mA 0.37 VF IF=100mA 0.61 VF VF IF=200mA 0.65 CT VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100 MAX 500 100 0.33 0.42 0.80 1.0 5.0 UNITS nA A V V V V V pF ns Enhanced specification. Additional Enhanced specification. R2 (25-January 2010) CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: 4E R2 (25-January 2010) w w w. c e n t r a l s e m i . c o m |
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