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FMP3216DAX
Document Title
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History Revision No.
0.0 0.1 Initial Draft Removed Page Write Operation
History
Draft date
Apr. 10, 2010 p , Jul. 14, 2010
Remark
Preliminary y
1
Revision 0.1 Jul. 2010
FMP3216DAX
CMOS LPRAM
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FEATURES * Process Technology : Full CMOS
* Organization : 2M x 16 * Power Supply Voltage 2.7V ~ 3.3V * Three state output and TTL Compatible * Separated I/O power(VCCQ) & Core power(VCC) * Operating Temperature Ranges:
Special (-10'C to +60'C) Commercial (0'C to +70'C) Extended (-25'C to 85'C) E t d d ( 25'C t +85'C) Industrial (-40'C to +85'C)
*Package Type : 48-FBGA-6.00x8.00 mm2
FMP3216DAX-HxxX : Pb-Free & Halogen Free
* Low Power & Page Modes
FMP3216DA1 : support the PASR/DPD function FMP3216DA2 : support the Direct DPD function FMP3216DA4 : support the PASR/DPD/PAGE function FMP3216DA5 : support the Direct DPD/PAGE function
* Page read operation by 16 words
(FMP3216DA4, FMP3216DA5)
* DPD mode by using MRS only
(FMP3216DA1, FMP3216DA4)
* Direct DPD mode when /ZZ goes low
(FMP3216DA2, FMP3216DA5)
PRODUCT FAMILY
Operating Voltage (V) Product Family Min. Typ. Max. FMP3216DAX-H60E FMP3216DAX-H70E 2.7 3.0 3.3 60ns 70ns Speed Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 15mA 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ. 90uA Max. 120uA
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. H=FBGA(Pb-Free & Halogen Free), W=WAFER 3. Operating Temperature Range: S (-10'C~60'C), C(0'C~70'C), E(-25'C~85'C), I (-40'C~85'C)
PIN DESCRIPTION
1 2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A B C D E F G H
/LB I/O9
/OE /UB
A0 A3
A1 A4
A2 /CS
/ZZ I/O1
VCC VSS Memory array
I/O10 VSS
I/O11 I/O12
A5 A17
A6 A7 A16
I/O2 I/O4 I/O5
I/O3 VCC VSS
Row Addresses
Row select
VCCQ I/O15 I/O16 A18
I/O13 I/O14 A19 A8
DNU A14 A12 A9
A15 A13 A10
I/O6
I/O7
I/O1~I/O8 Data cont I/O Circuit Column select
WE A11
I/O8
I/O9~I/O16 Data cont
A20
48-FBGA 48 FBGA : Top View(Ball Down)
Name /ZZ /CS /OE /WE A0~A20 A0 A20 I/O1~I/O16 Function Low Power Modes Chip Select Input Output Enable Input Write Enable Input Address I Add Inputs t Data Inputs/Outputs Name VCC VCCQ VSS /UB /LB DNU Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower B t (I/O 1~8) L Byte(I/O 1 8) Do Not Use
/CS /OE /WE /UB /LB /ZZ Control Logic
Data cont
Column Addresses
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FMP3216DAX
PRODUCT LIST
Part Name FMP3216DAX-H60E FMP3216DAX-H70E
1. H=FBGA(Pb-Free & Halogen Free), W=WAFER 2. Operating Temperature Range: S (-10'C~60'C), C(0'C~70'C), E(-25'C~85'C), I (-40'C~85'C)
CMOS LPRAM
Function 60ns, VCC=3.0V, VCCQ=3.0V 70ns, VCC=3.0V, VCCQ=3.0V
FUNCTIONAL DESCRIPTION
/CS H X1) H L /ZZ H L L H /OE X1) X1) X1) H /WE X1) X1) X1) H /LB X1) X1) X1) X1) H L H L H L H X1) L L H L
1. X means don't care.(Must be low or high state) 2. In case of FMP3216DA2 & FMP3216DA5 product p 3. In case of FMP3216DA1 & FMP3216DA4 product 4. Write data can't be written to the memory cell.
/UB X1) X1) X1) X1) H H L L H H L L
I/O1-8 I/O1 8 High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z Din High-Z Din
I/O9-16 I/O9 16 High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z High-Z Din Din
Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Write-abort4) Lower Byte Write Upper Byte Write Word Write
Power Po er Standby Direct DPD2) Low Power Modes3) Active Active Active Active Active Active Active Active Active
L
H
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Power Dissipation Storage temperature Symbol VIN, VOUT VCC PD TSTG Ratings -0.5 to VCC+0.3V -0.2 to 3.6 1.0 -65 to 150 Unit V V W 'C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
FMP3216DAX Item
Supply voltage I/O operating voltage (VCCQ VCC) Ground Input high voltage Input low voltage
Note : 1. Overshoot : Vcc+1.0V in case of pulse width20ns. 2. Undershoot : -1.0V in case of pulse width20ns. 3. Overshoot and undershoot are sampled, not 100% tested.
Symbol Min
VCC VCCQ VSS VIH VIL
Unit Typ 3.0 3.0 0 VCCQ 0 Max 3.3 3.3 0 VCC+0.21) 0.2VCCQ V V V V V 2.7 2.7 0 0.8VCCQ -0.22)
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FMP3216DAX
CAPACITANCE1)
Item It Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol S bl CIN CIO Test C diti T t Condition VIN=0V VIO=0V Min Mi Max M 8 8 Unit U it pF pF
(f=1MHz , TA=25'C)
DC AND OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Symbol ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) St db C t(TTL) Standby Current(CMOS) VOL VOH ISB ISB1 ISB0 Low Power Modes ISB0a ISB0b ISB0c VIN VSS VIN=VSS to VCC /CS=VIH, /ZZ=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC Cycle time=1us, 100%duty, IIO=0mA, /CS0.2V, /ZZ=VIH, VIN0.2V or VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, /ZZ=VIH, VIN=VIL or VIH IOL=0.5mA IOH=-0.5mA /CS=VIH, /ZZ=VIH, Other i /CS VIH /ZZ VIH Oth inputs=VIH or VIL t VIH /CSVCC-0.2V, /ZZVCC-0.2V, Other inputs=0~VCC /ZZ0.2V, Other inputs=0~VCC, No refresh(DPD) /ZZ0.2V, Other inputs=0~VCC, 1/4 refresh area selection /ZZ0.2V, Other inputs=0~VCC, 1/2 refresh area selection /ZZ0.2V, Other inputs=0~VCC, All refresh area selection 0.8VCCQ 0.3 03 120 10 90 100 120 Test Conditions Min -1 1 -1 Max 1 1 3 20 0.2VCCQ Unit uA uA mA mA V V mA A uA uA uA uA uA
Operating Range
Device FMP3216DAX-XxxS FMP3216DAX-XxxC FMP3216DAX-XxxE FMP3216DAX-XxxI Range Special Commercial Extended Industrial Ambient Temperature -10 to +60 0 to +70 2.7V to 3.3V -25 to +85 -40 to +85 2.7V to VCC VCC VCCQ
AC Input/Output Reference Waveform
VCCQ Input1 VSS
NOTE:
1. AC test inputs are driven at VCCQ for a logic 1 and VSS for a logic 0. Input rise and fall times (10% to 90%) < 1.6ns. 2. Input 2 Inp t timing begins at VCCQ/2. VCCQ/2 3. Output timing ends at VCCQ/2.
VCCQ/2 2
Test Points
VCCQ/23 Output
AC Output Load Circuit
Test Point DUT 50& 30pF VCCQ/2
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FMP3216DAX
AC CHARACTERISTICS(VCC=2.7V~3.3V) CHARACTERISTICS(VCC 2.7V 3.3V)
Speed Bins Parameter List Symbol Min Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output /UB, /LB Access Time Read Chip Select to Low-Z Output /UB, /LB Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High- Z Output g p /UB, /LB Disable to High- Z Output Output Disable to High- Z Output Output Hold from Address Change Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write /UB, /UB /LB Valid t E d of W it V lid to End f Write Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Page Mode Cycle Time Page Page Mode Address Access Time Maximum Cycle Time /CS High Pulse Width
1. /CS High Pulse Width is defined by /CS.
CMOS LPRAM
60ns Max 20k 60 60 25 25 5 5 5 20k 5 20 20k Min 70 10 10 5 0 0 0 5 70 60 0 60 60 50 0 0 15 0 5 25 10
70ns Max 20k 70 70 25 25 5 5 5 20k 5 25 20k -
Units
tRC tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tWC tCW tAS tAW tBW tWP tWR tWHZ tDW tDH tOW tPC tPAA tMRC tCP
60 10 10 5 0 0 0 5 60 50 0 50 50 50 0 0 15 0 5 20 10
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
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FMP3216DAX
Power Up Sequence pq
1. Apply Power 2. Maintain stable power for a minimum of 150us with /CS=/ZZ=VIH
CMOS LPRAM
Standby Mode State machines
Power On
/CS=/ZZ=VIH
Wait 150us
Initial State
/CS=VIH, /ZZ=VIH
/CS=VIL, /ZZ=VIH
Active Mode
/CS=VIH, /ZZ=VIL
/CS=VIL /ZZ=VIH /CS=VIH /ZZ=VIH /CS=VIH /ZZ=VIL
/CS=VIL /ZZ=VIH
Standby Mode
/CS=VIH, /ZZ=VIL
Low Power Modes 1 (32M/16M/4M bits) ( )
Low Power Modes 2 (Data Invalid)
/CS=VIH, /ZZ=VIL
Standby Mode Characteristics
Mode Standby Memory Cell Data Valid Invalid 1/4 valid Low Power Modes 1/2 valid valid 100 (ISB0b) 120 (ISB0c) 0 0 Standby Current(uA) 120 (ISB1) 10 (ISB0) 90 (ISB0a) Wait Time(us) 0 150 0
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FMP3216DAX
READ CYCLE (1)
Address
tOH tAA
CMOS LPRAM
tRC
(Address controlled,/CS=/OE=VIL, /ZZ=/WE=VIH, /UB or/and /LB=VIL)
Data Out
Previous Data Valid
Data Valid
READ CYCLE (2) ()
Address
(/ZZ=/WE=VIH)
tRC
tAA tCO
tOH
/CS
tHZ tBA tBHZ
/UB, /LB /OE
tOLZ tBLZ tLZ
tOE
tOHZ
Data Out
High-Z
Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 3. Do t 3 D not access d i with cycle ti i shorter th tRC(tWC) f continuous periods > 20 device ith l timing h t than for ti id 20us.
PAGE READ CYCLE
(/ZZ=/WE=VIH, 16 words access)
tMRC tRC tPC tPC tPC tPC tPC tPC tPC
A0~A3
tAA
A4~A20
tOH
tCO
/CS
tHZ
/UB, /LB /OE
tBLZ
tBA
tBHZ
tOE
tOLZ tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid tPAA Data Valid Data Valid tOHZ
Data Out
High-Z
tLZ
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to de ce interconnection. device te co ect o 3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us. 4. In case page address skew is over 3ns, tPAA will be out of spec.
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FMP3216DAX
WRITE CYCLE (1)
Address
tCW(2)
tWR(4)
CMOS LPRAM
tWC
(/WE controlled, /ZZ=VIH)
/CS
tAW tBW tWP(1)
/UB, /LB /WE
tAS(3)
tDW
tDH High-Z tOW
Data in Data Out
High-Z tWHZ
Data Valid
Data Undefined
WRITE CYCLE (2)
Address
(/CS controlled, /ZZ=/WE=VIH)
tWC
tAS(3)
tCW(2) tAW
tWR(4)
/CS /UB, /LB /WE
tDW tDH tBW tWP(1)
Data in Data Out
High-Z
Data Valid
High-Z
WRITE CYCLE (3)
Address
(/UB, /LB controlled, /ZZ=VIH)
tWC
tCW(2)
tWR(4)
/CS
tAW
/UB, /LB
tAS(3)
tBW tWP(1)
/WE
tDW tDH
Data in Data Out
Data Valid
High-Z
High-Z
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the /CS going low to end of write. g g 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high. 5. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 20us.
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FMP3216DAX
LOW POWER MODES 1. Mode Register Set
A20 ~ A5 A4 A3 A2 A1
CMOS LPRAM
A0
0
ZZ
Enable/Disable
Array On/Off on /ZZ
Half Selection
Array Refresh Area
/ZZ Enable/Disable A4 0 1 Type Deep Power Down Enable DPD Disable (Default)
Array On/Off on /ZZ A3 0 1 Type Partial Array Refresh Mode (Default) Reduced Memory Size Mode
Note: th N t If the register is written to enable the Deep it i itt t bl th D Power Down, the part will go into Deep Power Down during the following time that /ZZ is driven low and there is no MRS update. When /ZZ is driven high, all of the register settings will return to default state for the part (i.e. full array refresh, Deep Power Down Disabled).
Note: Th RMS(R d N t The RMS(Reduced Memory Size) mode is enabled after dM Si ) di bl d ft /ZZ goes high and remains enabled after /ZZ goes high. To change to a different mode, the mode register will have to be rewritten.
Half Selection (Top / Bottom) A2 0 1 Type Bottom (Default) Top
Array Refresh Area A1 0 0 1 1 A0 0 1 0 1 Type Full Array (Default) RFU 1/2 Array 1/4 Array
2. MRS Update
tWC
Address
tAS(3) tCW(2)
tWR(4)
/CS
tAW
/UB, /LB
tBW
tWP(1)
/WE
tZZWE
/ZZ
Register Write Start
Register Write Complete
Register Update Complete
The register update take place on the rising eDAe of /ZZ. Once the register is updated, the next time /ZZ goes low, without any updates to the register starting within the tZZWE max time of 1us, the part will refresh the array selected. The data bus is a don't care When /ZZ is low during the register updates.
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FMP3216DAX
3. Deep P 3D Power D Down M d E t /E it Mode Entry/Exit
tWC
CMOS LPRAM
A4
tAS(3) tCW(2) tWR(4)
/CS
tAW
/UB, /LB
tBW tWP(1)
/WE
tZZWE tR tZZmin Next Cycle
/ZZ
Register Write(DPD)
Deep Power down start
Deep Power down exit
Parameter tZZWE tR(Deep Power Down Mode only) tZZmin
Description ZZ low to Write Enable Low Operation Recovery Time Low Power Mode Time
Min 0 150 10
Max 1 -
Units us us us
4. Address Information
Partial Array Refresh Mode (A3=0, A4=1) A2 0 0 X 1 1 A1,A0 11 10 00 11 10 Refresh Section 1/4 1/2 Full F ll 1/4 1/2 Address 000000h-7FFFFh 000000h-FFFFFh 000000h-1FFFFFh 000000h 1FFFFFh 180000h-1FFFFFh 100000h-1FFFFFh Size 512Kbx16 1Mbx16 2Mbx16 2Mb 16 512Kbx16 1Mbx16 Density 8Mb 16Mb 32Mb 8Mb 16Mb
Reduced Memory Size Mode (A3=1, A4=1) A2 0 0 1 1 A1,A0 11 10 11 10 Refresh Section 1/4 1/2 1/4 1/2 Address 000000h-7FFFFh 000000h-FFFFFh 180000h-1FFFFFh 100000h-1FFFFFh Size 512Kbx16 1Mbx16 512Kbx16 1Mbx16 Density 8Mb 16Mb 8Mb 16Mb
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FMP3216DAX
PACKAGE DIMENSION
48 BALL FINE PITCH BGA(0 75mm ball pitch) BGA(0.75mm
Top View Bottom View B B B1
CMOS LPRAM
Unit : millimeters
A1 INDEX MARK
0.05 0.05
6 A B
5
4
3
2
1
#A1
C D C1 E C1 1/2 F G H B/2 Detail A 0.25/Typ. A Y Max 6.10 8.10 0.40 1.20 0.30 0.08 NOTES.
1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.) 3. All tolerance are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. 5 Y is coplanarity : 0 08(Max) 0.08(Max)
Side View D
E1
E
0.30
E2
C
C
A B B1 C C1 D E E1 E2 Y
Min 5.90 7.90 0.30 0.20 -
Typ 0.75 6.00 3.75 8.00 5.25 5 25 0.35 1.10 0.85 0.25 -
11
0.85/Typ.
Revision 0.1 Jul. 2010
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