|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
GenX3TM 300V IGBT IXGA42N30C3 High Speed PT IGBTs for 50-150kHz switching IXGH42N30C3 IXGP42N30C3 VCES IC110 VCE(sat) tfi typ = = = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque (TO-247)(TO-220) TO-263 TO-247 TO-220 Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 110C (chip capability) TC = 25C, 1ms TC = 25C TC = 25C VGE = 15V, TVJ = 125C, RG = 10 Clamped inductive load @ 300V TC = 25C Maximum Ratings 300 300 20 30 42 250 42 250 ICM = 84 223 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 6.0 3.0 V V V V A A A mJ A W C C C C C Nm/lb.in. g g g G C C (TAB) E C = Collector TAB = Collector G C E C (TAB) G E C (TAB) TO-247 (IXGH) TO-220 (IXGP) G = Gate E = Emitter Features Optimized for low switching losses Square RBSOA High current handling capability International standard packages Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 125C Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 100 1.54 1.54 1.85 TJ = 125C V V A A nA V V High power density Low gate drive requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99885B(07/08) VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 42A, VGE = 15V, Note1 (c) 2008 IXYS CORPORATION, All rights reserved IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 TO-247 0.50 0.25 Inductive Load, TJ = 125C IC = 0.5 * IC110, VGE = 15V VCE = 200V, RG = 10 Inductive Load, TJ = 25C IC = 0.5 * IC110, VGE = 15V VCE = 200V, RG = 10 IC = IC110, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 0.5 * IC110, VCE = 10V, Note 1 Min. 20 Characteristic Values Typ. Max. 33 2140 218 60 76 15 26 21 23 0.12 113 65 0.15 21 22 0.21 127 102 0.20 170 120 0.28 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W C/W TO-220 (IXGP) Outline e P TO-247 AD Outline Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Note1. Pulse test, t 300s; duty cycle, d 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 1. Output Characteristics @ 25C 90 80 70 VGE = 15V 13V 11V 9V 325 300 275 250 225 VGE = 15V 13V 11V Fig. 2. Extended Output Characteristics @ 25C IC - Amperes IC - Amperes 60 50 40 30 20 10 200 175 150 125 100 75 50 9V 7V 7V 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 25 0 0 2 4 5V 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125C 90 80 70 VGE = 15V 13V 11V 1.4 Fig. 4. Dependence of VCE(sat) on Junction Temperature VGE = 15V 1.3 I C = 84A VCE(sat) - Normalized 9V 1.2 1.1 I 1.0 0.9 I 0.8 C C IC - Amperes 60 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 5V 7V = 42A = 21A 0.7 -50 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.4 3.2 3.0 2.8 I C Fig. 6. Input Admittance 120 110 100 TJ = 25C = 84A 42A 21A 90 VCE - Volts 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 6 7 8 IC - Amperes 80 70 60 50 40 30 20 10 0 TJ = 125C 25C - 40C 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts VGE - Volts (c) 2008 IXYS CORPORATION, All rights reserved IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 7. Transconductance 60 55 50 45 25C 125C 12 TJ = - 40C 14 16 VCE = 150V I C = 42A I G = 10 mA Fig. 8. Gate Charge g f s - Siemens 40 35 30 25 20 15 10 2 5 0 0 20 40 60 80 100 120 140 0 0 10 20 30 40 50 60 70 80 4 VGE - Volts 10 8 6 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance 10,000 f = 1 MHz Cies 80 70 1,000 60 90 Fig. 10. Reverse-Bias Safe Operating Area Capacitance - PicoFarads IC - Amperes 50 40 30 20 TJ = 125C RG = 10 dV / dt < 10V / ns Coes 100 Cres 10 0 5 10 15 20 25 30 35 40 10 0 50 100 150 200 250 300 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.00 Z(th)JC - C / W 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.4 3.0 2.6 Eoff VCE = 200V I 2.2 1.8 1.4 1.0 0.6 0.2 10 15 20 25 30 35 40 45 50 55 60 65 70 75 I C = 42A C Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 3.2 2.0 1.8 1.6 2.4 Eoff VCE = 200V Eon 2.0 Eon - --- 2.8 ---- 1.8 1.6 1.4 TJ = 125C , VGE = 15V RG = 10 , VGE = 15V Eoff - MilliJoules Eoff - MilliJoules = 84A 2.0 1.6 1.2 0.8 1.4 1.2 1.0 0.8 0.6 0.4 TJ = 25C TJ = 125C E E - MilliJoules on on 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - MilliJoules 0.4 0.0 0.2 0.0 20 25 30 35 40 45 50 55 60 65 70 75 80 85 RG - Ohms IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 2.2 2.0 1.8 1.6 I C = 84A 1.3 1.2 1.1 1.0 Eoff VCE = 200V Eon 200 190 180 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 600 tf VCE = 200V td(off) - - - - 550 500 TJ = 125C, VGE = 15V t d(off) - Nanoseconds Eoff - MilliJoules 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 35 45 55 65 75 I C = 42A ---- 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 125 t f - Nanoseconds 170 160 150 140 130 120 110 100 10 15 20 25 30 35 40 45 50 55 60 65 70 75 I C 450 400 I C E on RG = 10 , VGE = 15V - MilliJoules = 42A 350 300 = 84A 250 200 150 100 85 95 105 115 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 170 160 150 140 140 170 160 135 150 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 135 tf VCE = 200V td(off) - - - - tf VCE = 200V td(off) - - - 130 RG = 10 , VGE = 15V TJ = 125C RG = 10 , VGE = 15V t d(off) - Nanoseconds t d(off) - Nanoseconds t f - Nanoseconds 130 120 110 100 90 80 70 60 50 20 30 40 50 60 TJ = 25C 130 t f - Nanoseconds 140 130 120 110 100 90 125 I C = 84A 120 125 120 115 115 I C = 42A 80 110 70 80 70 25 35 45 55 65 75 85 95 105 115 110 125 IC - Amperes TJ - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 180 160 100 140 120 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 32 tr VCE = 200V I C td(on) - - - - 90 80 tr td(on) - - - - 30 TJ = 125C, VGE = 15V RG = 10 , VGE = 15V t d(on) - Nanoseconds t r - Nanoseconds 140 = 84A 120 100 80 60 40 20 10 15 20 25 30 35 40 45 50 55 60 65 70 75 I = 42A 70 60 50 40 30 20 10 t r - Nanoseconds 100 80 60 40 20 0 20 25C < TJ < 125C VCE = 200V t d(on) - Nanoseconds 28 26 24 22 20 18 C 25 30 35 40 45 50 55 60 65 70 75 80 85 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 90 80 I C = 84A 32 30 t d(on) - Nanoseconds t r - Nanoseconds 28 tr 70 60 50 40 30 25 35 45 55 65 75 85 VCE = 200V td(on) - - - 26 24 22 20 18 125 RG = 10 , VGE = 15V I C = 42A 95 105 115 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_42N30C3(55)8-05-08-A |
Price & Availability of IXGA42N30C3 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |