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| Three Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 35/08 PSD 35/12 PSD 35/14 PSD 35/16 PSD 35/18 PSD 35 IdAVM VRRM = 38 A = 800-1800 V ~ ~ ~ Symbol IdAVM IFSM Test Conditions TC = 85C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 38 400 440 360 400 800 810 650 670 -40 ... + 150 150 -40 ... + 150 A A A A A A2 s A2 s A2 s A2 s C C C V V Nm Nm g i2 dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s (M4) (M4) 2500 3000 1.5 1.5 110 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM Characteristic Value 0.3 5.0 2.2 0.85 12 4.2 0.7 4.8 0.8 6.2 6.2 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 5 IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 21 POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 35 60 A IF(OV) -----IFSM 10 IFSM (A) TVJ=45C TVJ=150C 360 400 3 2 As 50 40 30 T=150C 1.6 TVJ=45C 1.4 TVJ=150C 1.2 20 10 IF 1 0 VRRM 0.8 1/2 VRRM 0 T=25C VF 0.6 1 VRRM 10 2 1 2 4 t [ms] 6 10 1 1.5 V 0.4 10 0 10 1 t[ms] 10 2 10 3 Fig. 1 Forward current versus voltage drop per diode 100 [W] 80 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 0.55 0.3 0.8 = RTHCA [K/W] 85 90 95 100 80 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) PSD 35 50 [A] 40 DC sin.180 rec.120 rec.60 rec.30 60 1.3 105 110 115 30 40 DC sin.180 rec.120 rec.60 rec.30 10 IFAVM 30 [A] 0 2.3 120 125 130 20 10 IdAV 50 100 TC(C) 150 200 20 PVTOT 0 5.3 135 140 145 150 C Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 6 Z thJK Z thJC Fig.5 Maximum forward current at case temperature K/W 4 2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions |
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