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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION *DC Current Gain -hFE = 40(Min)@ IC= -5A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F *Complement to Type BDT81F/83F/85F/87F APPLICATIONS *Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDT82F BDT84F VCBO Collector-Base Voltage BDT86F BDT88F BDT82F BDT84F VCEO Collector-Emitter Voltage BDT86F BDT88F VEBO IC ICM IB B BDT82F/84F/86F/88F VALUE -60 -80 UNIT V -100 -120 -60 -80 V -100 -120 -7 -15 -20 -4 36 150 -65~150 V A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDT82F BDT84F IC= -30mA; IB= 0 BDT86F BDT88F VCE(sat)-1 VCE(sat)-2 VBE(on) ICES ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= -5A; IB= -0.5A B BDT82F/84F/86F/88F CONDITIONS MIN -60 -80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -100 -120 -1.0 -1.6 -1.5 -1 -0.2 -0.1 40 40 20 MHz V V V mA mA mA IC= -7A; IB= -0.7A B IC= -5A ; VCE= -4V VCE= 0.8VCBOmax; VBE= 0 VCB= VCBOmax; IE= 0 VEB= -7V; IC= 0 IC= -50mA ; VCE= -10V IC= -5A ; VCE= -4V IC= -0.5A ; VCE= -10V Switching Times ton toff Turn-On Time IC= -7A; IB1= -IB2= -0.7A Turn-Off Time 2 s 1 s isc Websitewww.iscsemi.cn |
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