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| v01.0801 MICROWAVE CORPORATION HMC259 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Features Sub-Harmonically Pumped (x2) LO High 2LO/RF Isolation: >35 dB Small Size: 1.24mm x 1.55mm Typical Applications The HMC259 is ideal for: * Point to Point Radios * LMDS * SATCOM Functional Diagram General Description The HMC259 chip is a broadband sub-harmonically pumped (x2) balanced MMIC passive mixer which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET process resulting in a small overall chip area of 1.9mm2. This chip has a very wide IF bandwidth of DC-13 GHz. The 2LO to RF isolation is excellent eliminating the need for additional filtering. All data is with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31mm (<12 mils). This device is a much smaller and more reliable replacement to hybrid diode mixer designs. 5 MIXERS - CHIP Electrical Specifications, TA = +25 C, LO Drive = +15 dBm IF = 1 GHz IF = 1 GHz Units Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) 2LO to RF I s olation 2LO to I F I s olation RF to IF Isolation LO to IF Isolation I P 3 (Input) 1 dB Compression (Input) 28 58 25 10 2 -7 Typ. 28 - 40 14 - 20 DC - 12 14 14 35 65 30 15 5 -4 17 17 40 63 25 12 2 -7 Max. Min. Typ. 36 - 40 18 - 20 DC - 4 12 12 50 68 32 17 6 -1 15 15 Max. GHz GHz GHz dB dB dB dB dB dB dBm dBm Parameter *Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz. 5 - 120 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com MICROWAVE CORPORATION v01.0801 HMC259 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Conversion Gain vs. Temperature @ LO = +15 dBm 0 Isolation @ LO = +15 dBm 0 RF/LO ISOLATION (dB) CONVERSION GAIN (dB) -5 -55 C -10 +25 C -20 RF/IF LO/IF -40 2LO/IF -60 2LO/RF -15 -20 +85 C -25 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) -80 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 5 MIXERS - CHIP Conversion Gain vs. LO Drive 0 -5 -10 -15 -20 +16 dBm -25 -30 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) +13 dBm +14 dBm Return Loss @ LO = +15 dBm 0 -5 RETURN LOSS (dB) CONVERSION GAIN (dB) +15 dBm -10 -15 -20 -25 -30 -35 -40 0 5 10 15 IF LO & RF 20 25 30 35 40 FREQUENCY (GHz) IF Bandwidth @ LO = +15 dBm 0 IF CONVERSION GAIN (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IF FREQUENCY (GHz) Upconverter Performance Conversion Gain @ LO = +15 dBm 0 -5 -10 -15 -20 -25 -30 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com CONVERSION GAIN (dB) 5 - 121 v01.0801 MICROWAVE CORPORATION HMC259 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Input IP3 vs. LO Drive 20 THIRD ORDER INTERCEPT (dBm) +16 dBm Input IP3 vs. Temperature @ LO = +15 dBm 20 THIRD ORDER INTERCEPT (dBm) 16 16 +85 C 12 12 +15 dBm +25 C 8 8 4 +14 dBm 0 4 -55 C 0 5 MIXERS - CHIP SECOND ORDER INTERCEPT (dBm) 60 50 40 24 26 28 30 32 34 36 38 40 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Input IP2 vs. LO Drive Input IP2 vs. Temperature @ LO = +15 dBm SECOND ORDER INTERCEPT (dBm) 60 50 40 30 20 10 0 -55 C +16 dBm +14 dBm +25 C 30 20 10 0 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) +15 dBm +85 C 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) MxN Spurious Outputs nLO mRF -3 5 4 3 2 1 0 P1dB vs. Temperature @ LO = +15 dBm 5 4 3 2 P1dB (dBm) +85 C -2 -1 0 1 2 3 -37 -46 -48 -22 -28 x -40 -76 -44 -81 +29 -24 -29 1 0 -1 -2 -3 -4 -5 24 26 28 30 -55 C +25 C RF = 30 GHz @ -15 dBm LO = 14 GHz @ +15 dBm All values in dBc below the IF power level 32 34 36 38 40 RF FREQUENCY (GHz) 5 - 122 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.0801 MICROWAVE CORPORATION HMC259 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +23 dBm -65 to +150 deg C -55 to +85 deg C 5 Outline Drawing RF 1.55 (0.061) BACKSIDE IS GROUND 1.35 (0.053) IF 0.76 (0.030) Hittite ALL DIMENSIONS IN MILLIMETERS (INCHES) ALL TOLERANCES ARE 0.025 (0.001) DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND BOND PADS ARE 0.100 (0.004) SQUARE BOND PAD SPACING, CTR-CTR: 0.150 (0.006) BACKSIDE METALLIZATION: GOLD BOND PAD METALLIZATION: GOLD LO 0.15 (0.006) 0.10 (0.004) 0.10 (0.004) 1.04 (0.041) 1.24 (0.049) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com 5 - 123 MIXERS - CHIP v01.0801 MICROWAVE CORPORATION HMC259 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz MMIC Assembly Techniques for HMC259 5 MIXERS - CHIP Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Figure 3: Typical HMC259 Assembly Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 5 - 124 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com v01.0801 MICROWAVE CORPORATION HMC259 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 5 MIXERS - CHIP 5 - 125 Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at sales@hittite.com |
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