Part Number Hot Search : 
1N715A BAS85T 21MA20S 13007 B3207Z 16NF190 T1310 CFD2375
Product Description
Full Text Search
 

To Download IXFK220N15P Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 PolarTM Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFK220N15P IXFX220N15P
VDSS ID25
RDS(on) trr
= =
150V 220A 9m 200ns
TO-264 (IXFK)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) Leads Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C
Maximum Ratings 150 150 20 30 220 160 600 50 3 20 1250 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C Nm/lb.in. N/lb. g g
G D S
Tab
PLUS247 (IXFX)
G
D
S
Tab D = Drain Tab = Drain
G = Gate S = Source
Features Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages High Power Density Easy to Mount Space Savings Applications
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150C
Characteristic Values Min. Typ. Max. 150 2.5 4.5 200 V V nA
50 A 1.5 mA 9 m
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC and DC Motor Drives Uninterrupted Power Supplies High Speed Power Switching Applications
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100017A(01/11)
IXFK220N15P IXFX220N15P
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 50 85 15.4 3040 35 35 28 56 17 162 58 56 S nF pF pF ns ns ns ns
Dim. Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain
TO-264 Outline
nC nC nC 0.12 C/W C/W
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 110A, VGS = 0V, Note 1 IF = 110A, -di/dt = 150A/s VR = 75V, VGS = 0V 1.32 18.8 Characteristic Values Min. Typ. Max. 220 800 1.4 A A V
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
PLUS247TM Outline
200 ns C A
Note
1: Pulse test, t 300s, duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain 3 - Source
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFK220N15P IXFX220N15P
Fig. 1. Output Characteristics @ T J = 25C
220 200 180 160 VGS = 15V 10V 9V 8V 350 VGS = 15V 10V 9V
Fig. 2. Extended Output Characteristics @ T J = 25C
300 250
ID - Amperes
140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 6V 7V
ID - Amperes
8V 200
150
7V
100 50 5V 0 0 1 2 5V 3 4 5 6 7 8 9 10
6V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
220 200 180 160 VGS = 15V 10V 9V 8V 3.2
Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature
2.8
VGS = 10V
R DS(on) - Normalized
2.4 I D = 220A 2.0 I D = 110A 1.6
ID - Amperes
140 7V 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5V 6V
1.2 0.8
0.4 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current
3.2 VGS = 10V 15V - - - - TJ = 175C 180 160 140
Fig. 6. Maximum Drain Current vs. Case Temperature
External Lead Current Limit
2.8
R DS(on) - Normalized
ID - Amperes
TJ = 25C 0 50 100 150 200 250 300 350
2.4
120 100 80 60 40 20
2.0
1.6
1.2
0.8
0 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFK220N15P IXFX220N15P
Fig. 7. Input Admittance
200 180 120 160 140 100 25C 140 TJ = - 40C
Fig. 8. Transconductance
120 100 80 60 40
g f s - Siemens
ID - Amperes
TJ = 150C 25C - 40C
80
150C
60
40 20
20 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 0 20 40 60 80 100 120 140 160 180 200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 75V I D = 110A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C
200 150 100
6 5 4 3 2 1
50 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 0 20 40 60 80 100 120 140 160 180
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit Cisss
f = 1 MHz Capacitance - PicoFarads
10,000 100 Coss
25s 100s External Lead Limit
1,000
ID - Amperes
1ms 10
100 Crss TJ = 175C TC = 25C Single Pulse 10 0 5 10 15 20 25 30 35 40 1 1 10 100 1000 10ms DC 100ms
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK220N15P IXFX220N15P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z (th )JC - C / W
0.01 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_220N15P(93)01-07-11-A


▲Up To Search▲   

 
Price & Availability of IXFK220N15P

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X