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| PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS(on) 350 m trr 200 ns TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting Force (TO-247) (PLUS220) Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Tranisent TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150 C, RG = 4 TC = 25 C Maximum Ratings 600 600 30 40 22 66 22 40 1.0 20 400 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A mJ J V/ns W C C C C C G S D (TAB) D = Drain TAB = Drain G D S G D D (TAB) S PLUS220 (IXFV) D (TAB) PLUS220SMD (IXFV...S) 1.13/10 Nm/lb.in. 11..65/2.5..15 Nm/lb. 6 4 g g TO-247 PLUS220 & PLUS220SMD G = Gate S = Source Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C Characteristic Values Min. Typ. Max. 600 3.0 5.5 100 25 250 350 V V nA A A m Features l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect Advantages Easy to mount l Space savings l High power density l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2006 IXYS All rights reserved DS99315E(03/06) IXFH 22N60P IXFV22N60P IXFV 22N60PS Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 15 20 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 20 60 23 58 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 22 S pF pF pF ns ns ns ns nC nC nC 0.31 C/W 0.21 C/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 22 66 1.5 200 1.0 A A V ns C Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXFV) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 26A -di/dt = 100 A/s VR = 100V, VGS = 0 V PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 22N60P IXFV22N60P IXFV 22N60PS Fig. 1. Output Characte ris tics @ 25C 22 20 18 16 V GS = 10V 8V 45 40 35 30 7.5V V GS = 10V 9V 8V 7.5V Fig. 2. Exte nde d Output Characte ris tics @ 25C I D - Amperes I D - Amperes 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 25 20 15 10 6.5V 6V 0 3 6 9 12 15 18 21 24 27 30 7V 7V 6V 5 0 7 8 9 V D S - V olts Fig. 3. Output Characte ris tics @ 125C 22 20 18 16 V GS = 10V 8V 7V 3.4 3.1 V GS = 10V V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 11A V alue vs . Junction Te m pe rature R D S ( o n ) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 11A I D = 22A I D - Amperes 14 12 10 8 6 4 2 0 0 2 4 6 5.5V 5V 8 10 12 14 16 18 20 6V 6.5V V D S - V olts -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 24 Fig. 5. RDS(on) Nor m alize d to ID = 11A V alue vs . Dr ain Curr e nt 3 2.8 2.6 V GS = 10V TJ = 125 C 20 16 R D S ( o n ) - Normalized 2.4 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 TJ = 25 C I D - Amperes 2.2 12 8 4 0 I D - A mperes 20 25 30 35 40 45 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2006 IXYS All rights reserved IXFH 22N60P IXFV22N60P IXFV 22N60PS Fig. 7. Input Adm ittance 30 27 24 30 27 24 TJ = -40 C 25 C 125 C Fig. 8. Trans conductance I D - Amperes 18 15 12 9 6 3 0 4.5 5 5.5 6 6.5 7 7.5 8 TJ = 125 C 25 C -40 C - Siemens fs 21 21 18 15 12 9 6 3 0 0 g 3 6 9 12 15 18 21 24 27 30 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 70 60 50 10 9 8 7 V DS = 300V I D = 11A I G = 10m A I D - A mperes Fig. 10. Gate Char ge I S - Amperes V G S - Volts TJ = 25 C 0.8 0.9 1 1.1 40 30 TJ = 125 C 20 10 0 0.4 0.5 0.6 0.7 6 5 4 3 2 1 0 V S D - V olts Fig. 11. Capacitance 10000 f = 1MH z C iss 100 0 10 20 30 40 50 60 Q G - nanoCoulombs Fig. 12. For w ard-Bias Safe Ope rating Are a R DS(on) Lim it Capacitance - picoFarads C oss I D - Amperes 1000 25s 100s 1m s 10m s 10 100 C rs s TJ = 150C TC = 25C DC 10 0 5 10 15 1 V D S - V olts 20 25 30 35 40 10 100 1000 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. IXFH 22N60P IXFV22N60P IXFV 22N60PS Fig. 13. Maxim um Transient Therm al Resistance 1.00 R ( t h ) J C - C / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2006 IXYS All rights reserved IXYS REF: T_22N60P (6J) 02-17-06-B |
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