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| SDB412WS SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features * Small surface mounting type * Low forward voltage * High reliability PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 Applications * Low power rectification PR Top View Marking Code: "PR" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 40 20 0.5 3 125 - 40 to + 125 Unit V V A A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 500 mA Reverse Current at VR = 10 V at VR = 40 V Total Capacitance at VR = 10 V, f = 1 MHz Symbol VF Typ. 20 Max. 0.3 0.5 30 200 - Unit V IR CT A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/09/2006 SDB412WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/09/2006 SDB412WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/09/2006 |
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