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| ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Single SM-8 surface mount package D1, D2 D3, D4 G1 S1 S4 G4 APPLICATIONS * Single phase DC fan motor drive G2 S2 S3 G3 ORDERING INFORMATION DEVICE ZXMHC3A01T8TA ZXMHC3A01T8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING * ZXMH C3A01 Top View DRAFT ISSUE E - APRIL 2004 1 SEMICONDUCTORS ZXMHC3A01T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage SYMBOL V DSS V GS N-Channel 30 20 3.1 2.5 2.7 I DM IS I SM PD PD T j , T stg 14.5 2.3 14.5 1.3 10.4 1.7 13.6 -55 to +150 P-channel -30 20 -2.3 -1.8 -2.0 -10.8 -2.2 -10.8 UNIT V V A A A A A A W mW/C W mW/C C Continuous drain current (V GS = 10V; TA =25C)(b)(d) I D (VGS = 10V; TA =70C) (b)(d) (V GS = 10V; T A =25C) (a)(d) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T A =25C (a) (d) Linear derating factor Power dissipation at T A =25C Linear derating factor Operating and storage temperature range (b) (d) THERMAL RESISTANCE PARAMETER Junction to ambient (a) (d) Junction to ambient (b) (d) SYMBOL R JA R JA VALUE 96 73 UNIT C/W C/W NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 S - pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph. (d) For device with one active die. DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 2 ZXMHC3A01T8 CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 3 SEMICONDUCTORS ZXMHC3A01T8 N-channel ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1) Forward transconductance (1) (3) DYNAMIC (3) Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate drain charge SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Q gs Q gd V SD t rr Q rr 30 1.0 100 1.0 3.0 0.12 0.18 3.5 V A nA V I D = 250 A, V GS =0V V DS =30V, V GS =0V V GS =20V, V DS =0V I D = 250 A, V DS =V GS V GS = 10V, I D = 2.5A V GS = 4.5V, I D = 2.0A S V DS =4.5V, I D = 2.5A 190 38 20 pF pF pF V DS = 25V, V GS =0V f=1MHz 1.7 2.3 6.6 2.9 3.9 0.6 0.9 ns ns ns ns nC nC nC V DS = 15V, V GS = 10V I D = 2.5A V DD = 15V, I D = 2.5A R G 6.0, V GS = 10V 0.95 17.7 13.0 V ns nC T j =25C, I S = 1.7A, V GS =0V T j =25C, I S = 2.5A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 4 ZXMHC3A01T8 N-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 5 SEMICONDUCTORS ZXMHC3A01T8 N-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 6 ZXMHC3A01T8 P-channel ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1) Forward transconductance (1) (3) DYNAMIC (3) Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) Turn-on-delay time Rise time Turn-off delay time Fall time Total gate charge Total gate charge Gate-source charge Gate drain charge SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) V SD t rr Q rr -0.85 19 15 -0.95 V ns nC T j =25C, I S = -1.1A, V GS =0V T j =25C, I S = -0.95A, di/dt=100A/ s Qg Q gs Q gd t d(on) tr t d(off) tf 1.2 2.3 12.1 7.5 2.6 5.2 0.7 0.9 ns ns ns ns nC nC nC nC V DS = -15V, V GS = -5V I D = -1.4A V DS = -15V, V GS = -10V I D = -1.4A V DD = -15V, I D = -1A R G 6.0 , V GS = -10V C iss C oss C rss 204 39.8 25.8 pF pF pF V DS = -15V, V GS =0V f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 2.5 -1.0 -30 -1.0 100 -3.0 0.21 0.33 S V A nA V I D = -250 A, V GS =0V V DS = -30V, V GS =0V V GS =20V, V DS =0V I D = -250 A, V DS =V GS V GS = -10V, I D = -1.4A V GS = -4.5V, I D = -1.1A V DS = -15V, I D = -1.4A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE E - APRIL 2004 7 SEMICONDUCTORS ZXMHC3A01T8 P-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 8 ZXMHC3A01T8 P-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 9 SEMICONDUCTORS ZXMHC3A01T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 b c D E 0.02 0.24 6.3 3.3 Max 1.7 0.1 0.32 6.7 3.7 Typ. 0.7 Min Max 0.067 Typ. 0.0275 e1 e2 He Lp Inches DIM Min 6.7 0.9 Max 7.3 15 Typ. 4.59 1.53 10 Min Max Typ. 0.1807 0.0602 10 Millimeters Inches 0.008 0.004 - 0.264 0.287 0.035 15 - 0.009 0.013 0.248 0.264 0.130 0.145 (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 10 |
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