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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION *With TO-3 package *Complement to type 2N5067/5068/5069 *Low collector saturation voltage APPLICATIONS *For general-purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER 2N4901 VCBO Collector-base voltage 2N4902 2N4903 2N4901 VCEO Collector-emitter voltage 2N4902 2N4903 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -1 87.5 200 -65~200 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-1A; IB=-0.1A IC=-5A ;IB=-1A IC=-1A ; VCE=-2V IC=-0.2A ;IB=0 2N4901 2N4902 2N4903 SYMBOL CONDITIONS MIN -40 -60 -80 TYP. MAX UNIT V -0.4 -1.5 -1.2 -1.0 -0.1 -1.0 -2.0 -1.0 20 7 4 80 V V V mA mA mA mA VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-10V MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N4901 2N4902 2N4903 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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