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SPICE MODEL: MMBT4126
Lead-free
MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * *
Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4124) Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 2)
C B C A
SOT-23 Dim A B C D E G H
K J L M
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
Mechanical Data
E
B TOP VIEW E D G H
* * * * * * * * *
Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K2B Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate)
B
J K L M a
C
All Dimensions in mm
E
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -25 -25 -4.0 -200 300 417 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes: 1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30106 Rev. 7 - 2
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MMBT4126
a Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -25 -25 -4.0 3/4 3/4 120 60 3/4 3/4 3/4 3/4 120 250 3/4 Max 3/4 3/4 3/4 -50 -50 360 3/4 -0.40 -0.95 4.5 10 480 3/4 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -20V, IE = 0V VEB = -3.0V, IC = 0V IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -50mA, IB = -5.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = -2.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz
hFE VCE(SAT) VBE(SAT) Cobo Cibo hfe fT NF
3/4 V V pF pF 3/4 MHz dB
Ordering Information
Device MMBT4126-7-F
Note:
(Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel
3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B
K2B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code 1998 J Month Code 1999 K Jan 1 2000 L 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D
DS30106 Rev. 7 - 2
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YM
MMBT4126
400
Note 1 Note 1 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
100
f = 1MHz
10
Cibo
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
1 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
10
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
1
100
TA = -25C TA = +25C
10
0.1
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
0.9
0.8
0.7
0.6
IC IB = 10
0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100
DS30106 Rev. 7 - 2
3 of 4 www.diodes.com
MMBT4126
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30106 Rev. 7 - 2
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MMBT4126

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