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2SK2098-01MR
N-CHANNEL SILICON POWER MOSFET
Features
High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance www..com Avalanche-proof
FUJI POWER MOSFET
FAP-III SERIES
Outline Drawings
TO-220F15
Applications
Motor controllers General purpose power amplifier DC-DC converters
2.54
3. Source
JEDEC EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] IDR VGS PD Tch Tstg Rating 150 20 80 20 20 50 +150 -55 to +150 Unit V A A A V W C C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V VGS=0V VGS=20V VDS=0V ID=10A ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V RG=25 ID=20A VGS=10V L=100H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C
Min.
150 1.0 Tch=25C Tch=125C VGS=4V VGS=10V 10
Typ.
1.5 10 0.2 10 0.065 0.055 20 2300 330 150 15 20 450 100 1.00 125 0.6
Max.
2.5 500 1.0 100 0.100 0.080 3450 500 230 25 30 700 150 1.50
Units
V V A mA nA S pF
ns A V ns C
20
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
62.5 2.5
Units
C/W C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
2SK2098-01MR
On state resistance vs. Tch
40 0.2 30 ID [A] 20 0.1 www..com 10 RDS(on) []
0 0
0 2 4 6 VDS [ V ] 8 10 -50 0 50 Tch [ C ] 100 150
Typical transfer characteristics
40 0.5
Typical Drain-Source on state resistance vs. ID
0.4 30 RDS(on) 0.3 [] ID 20 [A] 0.2
10 0.1
0 0 2 4 6 VGS [ V ] 8 10
0 0 10 20 ID [ A ] 30 40
Typical forward transconductance vs. ID
40 3.0
Gate threshold voltage vs. Tch
30 2.0 gfs 20 [S]
VGS(th) [V] 1.0
10
0 0 10 20 ID [ A ] 30 40
0 -50
0
50 Tch [ C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS
101 150
2SK2098-01MR
Typical input charge
25
120 100 C [nF]
20
VDS 90 [V]
15 VGS [V] 10
60 www..com 10-1 30
5
10-2 0 10 20 VDS [ V ] 30 40
0 0 40 80 120 160 Qg [ nC ]
0 200
Forward characteristics of reverse diode
10
2
Allowable power dissipation vs. Tc
60
50
101 IF [A] 100
40 PD 30 [W] 20
10
10-1 0 0.5 VSD [ V ] 1.0 1.5
0 0 50 Tc [ C ] 100 150
Safe operating area
102
Transient thermal impedance
10 Rth [C/W]
0
101 ID [A]
10-1
100
10-2 10-5
10-4
10-3
10-2 t [ sec. ]
10-1
100
101
10-1 100
101
102 VDS [ V ]
103
3

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