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EE-SY110/113/171
Compact Reflective Phototransistor Output Low-profiled model with an overall
height of only 3 mm (EE-SY171)
Models with a circuit integrated into
molded housing provide special cost advantages (EE-SY110/113)
Model with a filter reduces effects of
external visible light (EE-SY113)
Ordering Information
Appearance Sensing method Sensing Sensing object distance Reflective 3.5 mm 4.4 mm 5 mm White paper with reflection factor of 90% Output configuration Weight Part number EE-SY171 EE-SY113 EE-SY110 Phototransistor 0.3 g Approx. 0.5 g
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Approx. 0.4 g
Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Item Input Forward current Pulse forward current Reverse voltage Output Collector-emitter voltage Collector current Collector dissipation Ambient temperature Operating Storage Symbol IF IFP VR VCEO IC PC Topr Tstg Rated value 50 mA* 1 A** 4V 30 V 20 mA 100 mW* -40C to 85C (-40F to 185F) -40C to 85C (-40F to 185F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range. **This value was measured with a pulse width of 10 s and a repeating frequency of 100 Hz.
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EE-SY110/113/171
EE-SY110/113/171
CHARACTERISTICS (TA = 25C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Receiver Dark current Peak spectral sensitivity wavelength Combination Light current Symbol VF IR p(L) ID p(P) EE-SY110 Value 1.5 V max. 10 A max. 940 nm typ. 200 nA max. 850 nm typ. Condition IF = 30 mA VR = 4 V IF = 20 mA VCE = 10 V 0lx VCE = 10 V IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 5 mm IF = 20 mA VCE = 10 V* VCC = 5 V RL = 1 k IL = 1 mA EE-SY171 Value 1.5 V max. 10 A max. 940 nm typ. 200 nA max. 850 nm typ. 50 to 500 A Condition IF = 30 mA VR = 4 V IF = 20 mA VCE = 10 V 0lx VCE = 10 V IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 3.5 mm IF = 20 mA VCE = 10 V* VCC = 5 V RL = 1 k IL = 1 mA EE-SY113 Value 1.5 V max. 10 A max. 940 nm typ. 200 nA max. 850 nm typ. Condition IF = 30 mA VR = 4 V IF = 20 mA VCE = 10 V 0lx VCE = 10 V IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 4.4 mm IF = 20 mA VCE = 10 V* VCC = 5 V RL = 1 k IL = 1 mA
IL
200 to 2,000 A
160 to 1,600 A
Leakage current Rising time** Falling time**
ILEAK tr tf
2 A max. 30 s typ. 30 s typ.
200 nA max. 30 s typ. 30 s typ.
2 A max. 30 s typ. 30 s typ.
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*The sensing object reflects no light. **The following illustrations show the rising time, tr, and the falling time, tf.
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VCC
Input
0 90% 10% tr tf
t
Input
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Sensing object
Output 0
t RL
Output
Engineering Data
Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.
TEMPERATURE CHARACTERISTICS
Forward current I F (mA)
IF, Pc
INPUT CHARACTERISTICS (TYPICAL)
Forward current I F (mA)
TA = --30 C TA = +25 C TA = +70 C
Ambient temperature TA (C) Forward voltage VF (V)
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Collector dissipation PC (mW)
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EE-SY110/113/171
EE-SY110/113/171
INPUT/OUTPUT CHARACTERISTICS (TYPICAL)
EE-SY110
VCE = 10 V Sensing object: White paper with a reflection factor of 90% Sensing distance: 5 mm
EE-SY171
TA = 25 C VCE = 10 V Sensing object: Paper with a reflection factor of 90% Sensing distance: 5 mm
Light current I L ( A)
Forward current IF (mA)
Light current I L ( A)
Forward current IF (mA)
OUTPUT CHARACTERISTICS (TYPICAL)
EE-SY110
IF = 40 mA
EE-SY171
TA = 25 C Sensing object: Paper with a reflection factor of 90% Sensing distance: 3.5 mm
IF = 40 mA
Light current I L (mA)
IF = 30 mA
Light current I L ( A)
IF = 30 mA
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IF = 20 mA
IF = 20 mA
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IF = 10 mA White paper (reflection factor: 90%) Sensing distance:5 mm
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IF =10 mA
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL)
EE-SY110/113
Relative light current IL (%)
Sensing object: White paper with a reflection factor of 90%
EE-SY171
Sensing object: Paper with a reflection factor of 90%
Based on the IL value at 25 C as 100%.
Relative light current IL (%)
IF = 20 mA VCE = 10 V Sending distance: 5 mm
IF = 20 mA VCE = 10 V Sending distance: 3.5 mm
Ambient temperature TA (C)
Ambient temperature TA (C)
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EE-SY110/113/171
EE-SY110/113/171
LEAKAGE CURRENT
EE-SY171
Current leakage I LEAK (nA)
TA = 25 C VCE = 10 V Sensing object: Object with no light reflection Sensing distance: Infinite
CHARACTERISTICS (TYPICAL)
SENSING DISTANCE
EE-SY110
CHARACTERISTICS 1 (TYPICAL)
TA = 25 C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90%
Light current I L ( A)
(a) (b) (c) (a): 15 x 15 mm2 (b): 10 x 10 mm2 (c): 5 x 5 mm2 (d): 2 x 2 mm2
(d)
Forward current IF (mA)
Distance d (mm)
SENSING DISTANCE
EE-SY171
CHARACTERISTICS 2 (TYPICAL)
TA = 25 C IF = 20 mA VCE = 10 V
SENSING DISTANCE
EE-SY171
TA = 25 C IF = 20 mA VCE = 10 V
CHARACTERISTICS (TYPICAL)
d
Light current I L ( A)
(a) (b) (c) (d) (e)
Light current I L ( A)
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Paper with a reflection factor of 90% Tracing paper OHP sheet Black paper
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a: Aluminum b: White paper with a reflection factor of 90%
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c: Pink paper d: OHP e: Tracing paper f: Black sponge
(f)
Distance d (mm)
Distance d (mm)
EE-SY110
Relative light current IL (%)
TA = 25 C IF = 20 mA VCE = 10 V d1 = 3 mm
EE-SY171
Relative light current IL (%)
TA = 25 C IF = 20 mA VCE = 10 V Sensing object: Paper with a reflection factor of 90% d1 = 3 mm d1 = 4 mm d1 = 5 mm d2 d1
d1 = 5 mm
d1 d2 Moving direction
Distance d2 (mm)
Distance d2 (mm)
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EE-SY110/113/171
EE-SY110/113/171
SWITCHING CHARACTERISTICS (RISE TIME, TYPICAL)
EE-SY110/113
TA = 25 C VCE = 10 V
EE-SY171
TA = 25 C VCE = 10 V Sensing distance: 3.5 mm Sensing object: Paper with a reflection factor of 90% RL = 4.7 k
RL = 4.7 k RL = 1 k RL = 470 RL=100 d
Rising time tr ( s)
Rising time tr ( s)
RL = 1 k
IL Input RL
Vcc
Input
0 t
RL = 470 RL = 100
OUT Output
0 tf
90% 10%
Light current IL (A)
Light current IL (A)
SWITCHING CHARACTERISTICS (FALL TIME, TYPICAL)
EE-SY110/113
TA = 25 C VCE = 10 V
EE-SY171
TA = 25 C VCE = 10 V Sensing distance: 3.5 mm Sensing object: Paper with a reflection factor of 90% RL = 4.7 k
Falling time tf ( s)
d RL = 1 k RL = 470 RL = 100 IL Input Vcc Input
0 t 10%
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Falling time tf ( s)
RL = 4.7 k
RL = 1 k RL = 470 RL = 100
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OUT Output 90%
0 tr t
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Light current IL (A)
Light current IL (A)
SENSING ANGLE CHARACTERISTICS (TYPICAL)
EE-SY110
Relative light current IL (%)
VCE = 10 V IF = 20 mA Sensing distance: 5 mm
EE-SY171
Relative light current IL (%)
Sensing object: White paper with a reflection factor of 90% - 0 +
TA = 2 5 C IF = 20 mA VCE = 10 V Sensing distance: 5 mm - 0 + d Sensing object: Paper with a reflection factor of 90%
d
Angle deviation ()
Angle deviation ()
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EE-SY110/113/171
EE-SY110/113/171
Dimensions
Unit: mm (inch)
EE-SY171
Two, 1.2 dia. Two, 2 dia. E 4.2 C 15 3 5.5 1 K Four, 0.5 K E 14 3 Anode mark A 2.5 A
Internal Circuit (All Models)
C
Terminal No. A K C E
0 to 30 Four, 0.25
Name Anode Cathode Collector Emitter
EE-SY113
12 0.7 K 6.2 2.5 A 15.2 E C Four, 0.5
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6 2.4 15 to 18
EE-SY110
12 4.5 E 4.6 C 2.5 Four, R1.5 K 2.5 0.6 A Four, 0.5
15.20.2 1.9 4.8 3 8 --0.2 15 to 18
+0
0.6
0.5 Four, 0.25 = 0 to 13
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EE-SY110/113/171
EE-SY110/113/171
Precautions
Refer to the Technical Information Section for general precautions.
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NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
OMRON ELECTRONICS, INC.
One East Commerce Drive Schaumburg, IL 60173
OMRON CANADA, INC.
885 Milner Avenue Scarborough, Ontario M1B 5V8
1-800-55-OMRON
.com EO5DAX4 Cat. No.
1/99 Specifications subject to change without notice.
416-286-6465
Printed in U.S.A.
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