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| UTC UT138E TRIACS DESCRIPTION Glass passivated , sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TRIAC SYMBOL MT2 1 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS ( Tj=25C) PARAMETER Repetitive Peak Off State Voltage UT138E-5 www..com UT138E-6 UT138E-8 RMS On-state Current (Full sine wave, Tmb99C) Non-repetitive Peak. On-State Current (Full sine wave, Tj=25C prior to surge) t=20ms t=16.7ms VDRM IT(RMS) ITSM 500* 600* 800 12 V A A SYMBOL RATING UNIT I2t For Fusing (t=10ms) I2t A2s Repetitive Rate of Rise of On-state Current after Triggering (ITM=20A,IG=0.2A, dIG/dt=0.2A/s) T2+ G+ 50 dIT/dt A/s T2+ G50 T2- G50 T2- G+ 10 Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (Over any 20ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 C Storage Temperature Tstg -40~150 C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15A/s. 95 105 45 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-011,B UTC UT138E THERMAL RESISTANCES PARAMETER Thermal Resistance, Junction to Mounting Base Full cycle Half cycle Thermal Resistance, Junciton to Ambient In free air TRIAC SYMBOL Rthj-mb Rthj-a 60 MIN TYP MAX 1.5 2.0 UNIT K/W K/W STATIC CHARACTERISTICS (Tj=25C, unless otherwise specified) PARAMETER Gate Trigger Current IGT SYMBOL TEST CONDITIONS VD=12V, IT=0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT =0.1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.1A IT=15A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125C VD=VDRM(max) , Tj=125C MIN TYP 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.4 0.7 MAX UNIT 10 10 10 25 30 40 30 40 30 1.65 1.5 0.5 mA Latching Current IL mA Holding Current On-State Voltage Gate Trigger Voltage Off-state Leakage Current IH VT VGT ID mA V V V mA 0.25 0.4 0.1 DYNAMIC CHARACTERISTICS (Tj=25C, unless otherwise specified) PARAMETER Critical Rate Of Rise Of Off-State Voltage Gate Controlled Turn-on Time SYMBOL dVD/dt tgt TEST CONDITIONS VDM=67% VDRM(max), Tj=125C Exponential waveform, Gate open circuit ITM=16A, VD=VDRM(max), IG=0.1A dIG/dt=5A/s MIN TYP MAX UNIT 50 2 V/s s UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-011,B UTC UT138E TYPICAL CHARACTERISTICS Figure 1.Maximum on -state Dissipation.Ptot vs RMS On-state Current,IT(RMS),Where=conduction Angle. 20 Ptot/W 10 5 Tmb(max )/C 95 = 180 = 120 102.5 = 90 = 60 = 30 110 15 TRIAC Figure 4.Maximum Permissible RMS Current IT(RMS) vs mounting baseTemperature Tmb. IT(RMS)/A 15 99 10 5 117.5 125 15 0 0 0 5 IT(RMS)/A 10 -50 0 50 Tmb/ 100 150 1000 Figure 2. Maximum Permissible Non-repetitive Peak On-state Current ITSM,vs Pulse Width tp,for Sinusoidal Currents,t p20ms. ITSM/A 25 20 15 Figure 5.Maximum Permissible Repetitive RMS on-state Current IT(RMS),vs Surge Duration,for Sinusoidal Currents,f=50Hz;Tmb99. IT(RMS)/A 100 dIT/dt limit T2-G+ quadrant 10 10us 100us 1ms T/s IT T Tj initial=25max ITSM time 10 5 10ms 100ms 0 0.01 0.1 1 Surge Duration /S 10 100 80 Figure 3 .Maximum Permissible Non-Repetitive peak on-state Current TSM,vs Number of Cycles, I for Sinusoidal Currents,f=50Hz. ITSM/A IT T ITSM time Tj initial=25max Figure 6.Normalised Gate Trigger Voltage V GT(Tj)/ VGT(25),vs Junction Temperature Tj. VGT(Tj) VGT(25) 1.6 1.4 1.2 1 60 40 20 0 1 0.8 0.6 100 10 Number of Cycles at 50Hz 1000 0.4 -50 0 50 Tj/ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-011,B UTC UT138E Figure 7.Normalised Gate Trigger Current IGT(Tj)/IGT(25),vs Junction Temperature Tj. IGT(Tj) IGT(25) T2+G+ T2+GT2-GT2-G+ Figure 10.Typical and Maximum On-state Characteristic. 40 IT/A Tj=125 Tj=25 typ TRIAC 3 2.5 2 1.5 1 0.5 max 30 20 Vo=1.175V Rs=0.0316 Ohms 10 0 -50 0 50 Tj/ 100 150 0 0 0.5 1 1.5 VT/V 2 2.5 3 3 2.5 2 1.5 1 0.5 0 Figure 8.Normalised Latching Current IL(Tj)/IL(25),vs Junction Temperature Tj. IL(Tj) IL(25) 10 1 0.1 Figure 11.Transient Thermal Impedance Zth j-mb,vs Pulse Width tp. Zth j-mb (K/W) unidirectional bidirectional PD tp t 0.1ms 1ms 10ms tp/s 0.1s 1s 10s 0.01 0.001 10us -50 0 50 Tj/ 100 150 3 2.5 2 1.5 1 0.5 0 Figure 9.Normalised Holding Current IH(Tj)/IH(25),vs Junction Temperature Tj. IH(Tj) IH(25) Figure 12.Typical,critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 1000 dVD/dt(V/us) 100 10 -50 0 50 Tj/ 100 150 1 0 50 Tj/ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-011,B UTC UT138E TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-011,B |
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