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UNISONIC TECHNOLOGIES CO., LTD 50N06
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 23m@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability
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*Pb-free plating product number: 50N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Normal Lead Free Plating 50N06-TA3-T 50N06L-x-TA3-T 50N06-TF3-T 50N06L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
50N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate to Source Voltage SYMBOL VDSS VGSS
MOSFET
RATINGS UNIT 60 V 20 V TC = 25 50 A Continuous Drain Current ID TC = 100 35 A Drain Current Pulsed (Note 1) IDM 200 A Single Pulsed Avalanche Energy (Note 2) EAS 480 mJ Repetitive Avalanche Energy (Note 1) EAR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/ns Total Power Dissipation (TC = 25 ) 130 W PD 0.9 W/ Derating Factor above 25 Operation Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL JC CS JA MIN TYP 0.5 62.5 MAX 1.15 UNIT C/W C/W C/W
ELECTRICAL CHARACTERISTICS TC = 25
PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Dynamic Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS BVDSS/ IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD
unless otherwise specified MIN 60 0.07 1 100 -100 2.0 18 900 430 80 40 100 90 80 30 9.6 10 4.0 23 1220 550 100 60 200 180 160 40 TYP MAX UNIT V V/ A A nA nA V m pF pF pF ns ns ns ns nC nC nC
TEST CONDITIONS
VGS = 0 V, ID = 250 A ID = 250 A, TJ Referenced to 25 VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 125 VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 25 A
VGS = 0 V, VDS = 25 V f = 1MHz
VDD = 30V, ID =25 A, RG = 50 (Note 4, 5) VDS = 48V, VGS = 10 V ID = 50A, (Note 4, 5)
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 50A, VGS = 0 V Continuous Source Current IS
Integral Reverse p-n Junction Diode in the MOSFET
D
MOSFET
MIN TYP MAX 1.5 50 A UNIT V
Pulsed Source Current
ISM
G S
200
Reverse Recovery Time tRR IS = 50A, VGS = 0 V dIF / dt = 100 A/s Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH, IAS=50A, VDD=25V, RG=0, Starting TJ=25 3. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300s,Duty Cycle2% 5. Essentially independent of operating temperature.
54 81
ns C
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TEST CIRCUITS AND WAVEFORMS
MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1 s Duty Factor 0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50k 12V 0.2 F 0.3 F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 1mA VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RG
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On-State Characteristics
V GS Top: 15V 2 10 V 10 8V 7V 6V 5 .5V 5V Bottorm : 4.5V
MOSFET
Transfer Characteristics 102
Drain Current, ID (A)
Drain Current, ID (A)
101
4.5V
10 1
25
1 50
Note: 1. VDS=50V 2. 250s Pulse Test 100 2 45 67 8 9 10 3 Gate-Source Voltage, VGS (V)
100
10-1
101 10 0 Drain-Source Voltage, VDS (V)
Drain-Source On-Resistance, RDS(ON) (m )
On-Resistance Variation vs Drain Current . and Gate Voltage 2.5 2.0 1.5 1.0 0.5 VGS=10V V GS=20V Reverse Drain Current, ISD (A) 102
On State Current vs. Allowable Case Temperature
150 10 1 25 *Note: 1. VGS=0V 2. 250s Test 1.6
0.0 0 20 40 60 80 100 120 140160180 200 Drain Current, I D (A)
10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage VSD (V) ,
Gate-to-Source Voltage, VGS (V)
3000 2500
Capacitance (pF)
Capacitance Characteristics (Non-Repetitive) CISS=CGS +CGD (C DS=shorted) COSS =C DS+C GD CRSS =CGD C ISS *Note: 1. VGS=0V 2. f = 1MHz
Gate Charge Characteristics 12 10 8 6 4 2 0 0 *Note: ID=50A 5 10 15 20 25 30 35 40 45 Total Gate Charge, QG (nC) VDS=30V
2000 1500 1000 500 0
COSS
VDS=48V
CRSS 15 20 25 30 35 10 5 Drain-Source Voltage, VDC (V)
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TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs Junction . Temperature 1.2 1.1 On-Resistance Variation vs . Junction Temperature
MOSFET
Drain-Source On-Resistance, RDS(ON), (Normalized)
Drain-Source Breakdown Voltage, BVDSS(Normalized)
3.0 2.5 2.0 1.5 1.0 0.5 0.0
1.0 *Note: 1. VGS=0V 2. ID=250A 0 50 100 150 200 )
0.9
*Note: 1. VGS=10V 2. I D=25A -50 0 50 100 150 Junction Temperature, T J ( )
0.8 -100 -50
Junction Temperature, T J (
Maximum Safe Operating 10 Operation in This Area by RDS (on)
Drain Current , ID,(A)
3
Maximum Drain Current vs. Case Temperature 50
Drain Current, ID (A)
10
2
100s 1ms 10ms 10ms
40 30 20 10 0
10
1
*Note: 0 10 1. T =25 c 2. T J=150 -1 3. Single Pulse 10 1 0 1 2 10 10 10 10 Drain-Source Voltage, VDS (V)
25
50
75
100
125 )
150
Case Temperature, T C (
Transient Thermal Response Curve
JC (t)
100 D=0.5 0.2 0.1
Thermal Response, Z
0.05 0.02 0.01 Single pulse
-2 *Note: 1. Z J C (t ) = 1.42 /W Max. 2. Duty Factor , D=t1/ t2 3. TJ -TC =PDMxZ J C (t)
10-1
10 -5 0 101 10 10 -4 10-3 10-2 10-1 10 Square Wave Pulse Duration t1 (sec) ,
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MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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