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| Datasheet Rev 2, 5/2005 ACT30 ACT30 FEATURES HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family GENERAL DESCRIPTION The ACT30 is a high performance green-energy offline power supply controller. It features a scalable driver for driving external NPN or MOSFET transistors for line voltage switching. This proprietary architecture enables many advanced features to be integrated into a small package (TO-92 or SOT23-5), resulting in lowest total cost solution. The ACT30 design has 6 internal terminals and is a pulse frequency and width modulation IC with many flexible packaging options. One combination of internal terminals is packaged in the space-saving TO-92 package (A/B/C/D versions) for 65kHz or 100kHz switching frequency and with 400mA or 800mA current limit. The E version (SOT23-5) can be configured for higher current limit. Consuming only 0.15W in standby, the IC features over-current, hiccup mode short circuit, and under-voltage protection mechanisms. The ACT30 is ideal for use in high performance universal adaptors and chargers. For highest performance versus cost and smallest PCB area, use the ACT30 in combination with the ACT32 CV/CC Controller. Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation www..com Over-Current Protection Under-voltage Protection with Auto-restart Proprietary Scalable Output Driver Flexible Packaging Options (including TO-92) 65kHz or 100kHz Switching Frequency Selectable 0.4A to 1.2A Current Limit APPLICATIONS Battery Chargers Power Adaptors Standby Power Supplies Appliances Universal Off-line Power Supplies Figure 1. Simplified Application Circuit Active-Semi, Inc. -1- Confidential to Micro Bridge ACT30 ORDERING INFORMATION PART NUMBER ACT30AHT-A ACT30BHT-A ACT30CHT-A ACT30DHT-A ACT30EUC-T SWITCHING FREQUENCY 65kHz 65kHz 100kHz 100kHz SELECTABLE CURRENT LIMIT 400mA 800mA 400mA 800mA ADJUSTABLE TEMPERATURE RANGE -40C to 85C -40C to 85C -40C to 85C -40C to 85C -40C to 85C PACKAGE TO-92 TO-92 TO-92 TO-92 SOT23-5 PINS 3 3 3 3 5 PIN CONFIGURATION www..com ACT30A ACT30B ACT30C ACT30D 1 2 3 VDD GND FREQ 1 2 3 5 DRV1 ACT30E 4 DRV2 TO-92 SOT23-5 PIN DESCRIPTION PIN NUMBER TO-92 1 2 3 5 4 3 SOT23-5 1 2 PIN NAME VDD GND DRV DRV1 DRV2 FREQ PIN DESCRIPTION Power Supply Pin. Connect to optocoupler's emitter. Internally limited to 5.5V max. Bypass to GND with a proper compensation network. Ground Driver Output (TO-92 Only). Connect to emitter of the high voltage NPN or MOSFET. For ACT30A/C, DRV pin is internally connected to DRV1. For ACT30B/D, DRV pin is internally connected to both DRV1 and DRV2. Driver Output 1 (SOT23-5 Only). Also used as supply input during startup. Driver Output 2 (SOT23-5 Only) Frequency Select (SOT23-5 Only). This terminal has an internal 200k pull down resistor. Connect to VDD for 100kHz operation. Connect to GND or leave unconnected for 65khz operation. Active-Semi, Inc. -2- Confidential to Micro Bridge ACT30 ABSOLUTE MAXIMUM RATINGS (Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability.) PARAMETER VALUE UNIT VDD, FREQ Pin Voltage VDD Current DRV, DRV1, DRV2 Voltage Continuous DRV, DRV1, DRV2 Current Maximum Power Dissipation Operating Junction Temperature www..com Storage Temperature -0.3 to 6 20 -0.3 to 18 Internally limited TO-92 SOT23-5 0.6 0.39 -40 to 150 -55 to 150 300 V mA V A W C C C Lead Temperature (Soldering, 10 sec) ELECTRICAL CHARACTERISTICS (VDD = 4V, TJ = 25C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VDD Start Voltage DRV1 Start Voltage DRV1 Short-Circuit Detect Threshold VDD Under-voltage Threshold VDD Clamp Voltage Startup Supply Current Supply Current Switching Frequency Maximum Duty Cycle Minimum Duty Cycle Effective Current Limit VDD to DRV1 Current Coefficient VDD Dynamic Impedance DRV1 or DRV2 Driver On-Resistance DRV1 Rise Time DRV1 Fall Time DRV1 and DRV2 Switch Off Current VSTART VDRVST VSCDRV VUV IDDST IDD fSW DMAX DMIN ILIM GGAIN RVDD RDRV1, 2 Rising edge DRV1 must be higher than this voltage to start up. Falling edge 10mA VDD = 4V before VUV ACT30A/B or FREQ = 0 ACT30C/D or FREQ = VDD ACT30A/C, VDD = 4V ACT30B/D, VDD = 4V VDD = 4.6V ACT30A/C VDD = VUV + ACT30B/D; ACT30E 0.1V with DRV1 = DRV2 ACT30A/C ACT30B/D 4.75 5 8.6 9.6 6.8 5.25 10.5 11.5 3.53 5.75 0.45 1 85 125 83 V V V V V mA mA kHz % % mA A/V k ns ns 3.17 5.15 3.35 5.45 0.23 0.7 55 75 67 60 65 100 75 3.5 400 800 -0.29 9 IDRV1 = IDRV2 = 0.05A 1nF load, 15 pull-up 1nF load, 15 pull-up Driver off, VDRV1 = VDRV2 = 10V 3.6 30 20 12 30 A Active-Semi, Inc. -3- Confidential to Micro Bridge ACT30 FUNCTIONAL DESCRIPTION Figure 2 shows the Functional Block Diagram of the ACT30. The main components include switching control logic, two on-chip medium-voltage power-MOSFETs with parallel current sensor, driver, oscillator and ramp generator, current limit VC generator, error comparator, hiccup control, bias and undervoltage-lockout, and regulator circuitry. As seen in Figure 2, the design has 6 internal terminals. VDD is the power supply terminal. DRV1 and DRV2 are linear driver outputs that can drive the emitter of an external high voltage NPN transistor or N-channel MOSFET. This www..com emitter-drive method takes advantage of the high VCBO of the transitor, allowing a low cost transistor such as `13003 (VCBO = 700V) or `13002 (VCBO = 600V) to be used for a wide AC input range. The slew-rate limited driver coupled with the turn-off characteristics of an external NPN result in lower EMI. The driver peak current is designed to have a negative voltage coefficient with respect to supply voltage VDD, so that lower supply voltage automatically results in higher DRV1 peak current. This way, the optocoupler can control VDD directly to affect driver current. STARTUP SEQUENCE Figure 1 shows a Simplified Application Circuit for the ACT30. Initially, the small current through resistor R1 charges up the capacitor C1, and the BJT acts as a follower to bring up the DRV1 voltage. An internal regulator generates a VDD voltage equal to VDRV1 - 3.6V for ACT30A/C (VDRV1 - 4.6V for ACT30B/D) but limits it to 5.5V max. As VDD crosses 5V, the regulator sourcing function stops and VDD begins to drop due to its current consumption. As VDD voltage decreases below 4.75V, the IC starts to operate with increasing driver current. When the output voltage reaches regulation point, the optocoupler feedback circuit stops VDD from decreasing further. The switching action also allows the auxiliary windings to take over in supplying the C1 capacitor. Figure 3 shows a typical startup sequence for the ACT30. To limit the auxiliary voltage, use a 12V zener diode for ACT30A/C or a 13V zener for ACT30B/D (D1 diode in Figure 1). Even though up to 2M startup resistor (R1) can be used due to the very low startup current, the actual R1 value should be chosen as a compromise between standby power and startup time delay. DRV1 DRV2 VDD 9k BIAS & UVLO REGULATOR -+ 3.6V (ACT30A/C) 4.6V (ACT30B/D) HICCUP CONTROL FREQ OSC & RAMP CURRENT 200k PFWM SWITCHING CONTROL LOGIC SLEW 1x 20k ERROR COMP 56x 56x ILIM VC GENERATOR + - 20k 40 4.75V - + 10uA/V GND GND FREQ terminal wire-bonded to VDD in ACT30C/D (TO-92) DRV2 terminal wire-bonded to DRV1 in ACT30B/D (TO-92) Figure 2. Functional Block Diagram Active-Semi, Inc. -4- Confidential to Micro Bridge ACT30 VAC pulse-skipped VDRVST VDRV1 5V VDD IPRIMARY VOUT www..com Figure 3. Startup Waveforms NORMAL OPERATION In normal operation, the feedback signal from the secondary side is transmitted through the optocoupler as a current signal into VDD pin, which has dynamic impedance of 9k. The resulting VDD voltage affects the switching of the IC. As seen from the Functional Block Diagram, the Current Limit VC Generator uses the VDD voltage difference with 4.75V to generate a proportional offset at the negative input of the Error Comparator. The drivers turn on at the beginning of each switching cycle. The current sense resistor current, which is a fraction of the transformer primary current, increases with time as the primary current increases. When the voltage accross this current sense resistor plus the oscillator ramp signal equals Error Comparator's negative input voltage, the drivers turn off. Thus, the peak DRV1 current has a negative voltage coefficent of -0.29A/V and can be calculated from the following: IDRV1PEAK = 0.29A/V * (4.75V - VDD) for VDD < 4.75V and duty cycle < 50%. When the output voltage is lower than regulation, the current into VDD pin is zero and VDD voltage decreases. At VDD = VUV = 3.35V, the peak DRV1 current has maximum value of 400mA. CURRENT LIMIT ADJUSTMENT The IC's proprietary driver arrangement allows the current limit to be easily adjusted between 400mA and 1.2A. To understand this, the drivers have to be utilized as linear resistive devices with typically 3.6 (rather than as digital output switches). The current limit can then be calculated through linear combination as shown in Figure 4. For TO-92 package, the ACT30A/C are preprogrammed to 400mA current limit and DRV1 DRV2 ILIM = 400 mA DRV1 DRV2 RD 7 . 2 + RD ILIM = 400 mA * 3.6 + R D DRV1 DRV2 ILIM = 800 mA RD DRV1 DRV2 R ILIM = 400mA * 2 + D 3.6 Figure 4. Driver Output Configurations Active-Semi, Inc. -5- Confidential to Micro Bridge ACT30 the ACT30B/D are preprogrammed to 800mA current limit. For ACT30E (SOT23-5) packages, both DRV1 and DRV2 terminals are provided. SHORT CIRCUIT HICCUP When the output is short circuited, the ACT30 enters hiccup mode operation. In this condition, the auxiliary supply voltage collapses. An on-chip detector compares DRV1 voltage during the off-time of each cycle to 6.8V. If DRV1 voltage is below 6.8V, the IC will not start the next cycle, causing both the auxiliary supply voltage and VDD to reduce further. The circuit enters startup mode when VDD drops below 3.35V. This hiccup behaviour continues until the short circuit is removed. In this behavior, the effective duty cycle is very low resulting in very low short circuit current. To make sure that the IC enters hiccup mode easily, the transformer should be constructed so that there is close coupling between secondary and auxiliary, so that the auxiliary voltage is low when the output is short-circuited. This can be achieved with the primary/auxiliary/secondary sequencing from the bobbin. PULSE SKIPPING The PFWM Switching Control Logic block operates in different modes depending on the output load current level. At light load, the VDD voltage is around 4.75V. The energy delivered by each switching cycle (with minimum on time of 500ns) to the output causes VDD to increase slightly above 4.75V. The FPWM Switching Control Logic block is able to detect this condition and prevents the IC from switching until VDD is below 4.75V again. This results in a www..com pulse-skipping action with fixed pulse width and varying frequency, and low power consumption because the switching frequency is reduced. Typical system standby power consumption is 0.15W. APPLICATION INFORMATION EXTERNAL POWER TRANSISTOR The ACT30 allows a low-cost high voltage power NPN transistor such as `13003 or `13002 to be used safely in flyback configuration. The required collector voltage rating for VAC = 265V with full output load is at least 600V to 700V. As seen from Figure 5, NPN Reverse Bias Safe Operation Area, the breakdown voltage of an NPN is significantly improved when it is driven at its emitter. Thus, the ACT30+'13002 or `13003 combination meet the necessary breakdown safety requirement even though RCC circuits using `13002 or `13003 do not. Table 1 lists the breakdown voltage of some transistors appropriate for use with the ACT30. Table 1. Recommended Power Transistors List IC Base-Drive Safe Region (RCC) EmitterDrive Safe Region (ACT30) VCEO VCBO VC Figure 5. NPN Reverse Bias Safe Operation Area DEVICE MJE13002 MJE13003, KSE13003 STX13003 VCBO 600V 700V 700V VCEO 300V 400V 400V IC 1.5A 1.5A 1A hFEMIN PACKAGE 8 8 8 TO-126 TO-126 TO-92 The power dissipated in the NPN transistor is equal to the collector current times the collector-emitter voltage. As a result, the transistor must always be in saturation when turned on to prevent excessive power dissipation. Select an NPN transistor with sufficiently high current gain (hFEMIN > 8) and a base drive resistor (R2 in Figure 1) low enough to ensure that the transistor easily saturates. Active-Semi, Inc. -6- Confidential to Micro Bridge ACT30 www..com Figure 6. A 3.75W Charger Using ACT30A in combination with ACT32 APPLICATION EXAMPLE The application circuit in Figure 6 provides a 5V/0.75A constant voltage/constant current output. An ACT30A is used in combination with the ACT32 for highest efficiency and lowest component count. To change the constant output voltage VOUTCV and constant current limit IOUTCC, modify R7 and R6 as following: R7 = 80k * [(VOUTCV - 1V)/3.8V - 1] R6 = 250mV/IOUTCC The performance of this circuit is summarized in Table 2. Table 2. System Performance of Circuit in Figure 6 LAYOUT CONSIDERATIONS The following should be observed when doing layout for the ACT30: 1. Use a "star point" connection at the GND pin of ACT30 for the VDD bypass components (C5 and C6 in Figure 6), the input filter capacitor (C2 in Figure 6) and other ground connections on the primary side. 2. Keep the loop across the input filter capacitor, the transformer primary windings, and the high voltage transistor, and the ACT30 as small as possible. 3. Keep ACT30 pins and the high voltage transistor pins as short as possible. 4. Keep the loop across the secondary windings, the output diode, and the output capacitors as small as possible. 5. Allow enough copper area under the high voltage transistor, output diode, and current shunt resistor for heat sink. 110VAC Standby Power Current Limit Full Load Efficiency 0.09W 0.75A 65% 220VAC 0.15W 0.75A 67% Active-Semi, Inc. -7- Confidential to Micro Bridge ACT30 PACKAGE OUTLINE TO-92 PACKAGE OUTLINE AND DIMENSIONS (AMMO TAPE PACKING) www..com SYMBOL A A1 b c D D1 E e e1 h DIMENSION IN MILIMETERS MIN 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 0.000 4.700 2.640 1.600 0.380 1.270 TYP MAX 3.700 1.400 0.550 0.510 4.700 DIMENSION IN INCHES MIN 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.000 0.185 0.104 0.063 0.015 0.050 TYP MAX 0.146 0.055 0.022 0.020 0.185 SYMBOL k F1, F2 H H0 L1 P P P0 P1 P2 Q1 t1 t2 W W0 W1 W2 DIMENSION IN MILIMETERS MIN -1.0 2.2 19 15.5 2.5 12.4 -1.0 12.5 3.55 6.05 3.8 0.35 0.15 17.5 5.5 8.5 13.0 1.0 12.9 4.15 6.65 4.2 0.45 0.25 19 6.5 9.5 1.0 MAX 1.0 2.8 21 16.5 DIMENSION IN INCHES MIN -0.039 0.087 0.748 0.610 0.098 0.488 -0.039 0.492 0.140 0.238 0.150 0.014 0.006 0.689 0.217 0.335 0.512 0.039 0.508 0.163 0.262 0.165 0.018 0.010 0.748 0.256 0.374 0.039 MAX 0.039 0.110 0.827 0.650 Active-Semi, Inc. -8- Confidential to Micro Bridge ACT30 SOT23-5 PACKAGE OUTLINE AND DIMENSIONS DIMENSION IN MILIMETERS MIN A A1 A2 b c www..com SYMBOL DIMENSION IN INCHES MIN 0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 0.071 0.012 0 MAX 0.049 0.004 0.045 0.016 0.008 0.119 0.067 0.116 0.079 0.024 8 MAX 1.250 0.100 1.150 0.400 0.200 3.020 1.700 2.950 2.000 0.600 8 1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0 D E E1 e e1 L L1 0.950 TYP 0.700 REF 0.037 TYP 0.028 REF Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. 44081 Old Warm Springs Blvd, Fremont, California 94538, USA Active-Semi, Inc. -9- Confidential to Micro Bridge |
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