 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ISSUED DATE :2005/01/13 REVISED DATE : GISD1803 Description Features NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. *Low collector-to-emitter saturation voltage. *High current and high fT *Excellent linearity of hFE *Fast switching time Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation (Ta = 25 : , unless otherwise specified) Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 : unless otherwise specified) Max. 1 1 0.4 1.3 400 MHZ ns ns ns pF Unit V V V uA uA V V IC=10uA, IE=0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=3A, IB=0.15A IC=3A, IB=0.15A VCE=2V, IC=0.5A VCE=2V, IC=4A VCE=5V,IC=1A See test circuit See test circuit See test circuit VCB=10V, f=1MHz Test Conditions Ratings +150 -55 ~ +150 60 50 6 5 8 1 20 V V V A A W W Unit Electrical Characteristics (Ta = 25 : Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton tstg tf Cob Min. 60 50 6 70 35 Typ. 0.22 0.95 180 50 500 20 40 GISD1803 Page: 1/3 ISSUED DATE :2005/01/13 REVISED DATE : Classification Of hFE1 Rank Range Q 70 ~ 140 R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 Switching Time Test Circuit Characteristics Curve GISD1803 Page: 2/3 ISSUED DATE :2005/01/13 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GISD1803 Page: 3/3 |
Price & Availability of GISD1803
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |