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| N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW T stg Tj ABSOLUTE MAXIMUM RATINGS Storage Temperature - Junction Temperature - - - - Collector Dissipation- Collector-Base Voltage- Collector-Emitter Voltage- Emitter-Base Voltage Collector Current- - --- - - - ---- -- - - - - Ta=25ae(c) -55~150ae 150ae 625mW 180V 160V - 6V 600mA TO-92 www..com PC VCBO VCEO V EB O IC 1D Emitter E 2D Base B 3D Collector C ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO HFE HFE HFE 1(c) 2(c) 3(c) 180 160 6 50 50 80 80 30 280 0.15 0.2 1 1 V V V nA nA IC=100|I IE=10|I A, IE=0 A IC=0 IC=1mA, IB=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA DC Current Gain VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V V MHz IC=10mA, IB=-1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA, VCE=10V, IC=10mA F=100MHz fT Current Gain-Bandwidth Product 100 300 |
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