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IXA12IF1200HB
preliminary
XPT IGBT
Copack
C (2)
I C25 = = VCES VCE(sat)typ =
20 A 1200 V 1.8 V
Part number
IXA12IF1200HB
(G) 1
E (3)
Features / Advantages:
Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage
Applications:
AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers
Package:
Housing: TO-247 rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant
IGBT
Ratings Symbol VCES VGES IC25 I C90 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA
Total power dissipation Collector emitter leakage current
Definition
Collector emitter voltage Maximum DC gate voltage Collector current
Conditions VGE = 0 V TVJ = 25C TVJ = 25C TC = 25C TC = 90C TVJ = 25C VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = 20 V IC = 9 A; VGE = 15 V TVJ = 25C TVJ = 125 C TVJ = 25C TVJ = 125 C
min.
typ.
max. 1200 20 20 13 85 0.1
Unit V V A A W mA mA nA V V V nC ns ns ns ns mJ mJ
0.1 500 1.8 2.1 5.5 6 27 70 40 6.5 2.1
Gate emitter leakage current Collector emitter saturation voltage
Gate emitter threshold voltage Total gate charge Turn-on delay time Current rise time Turn-off delay time Current fall time Turn-on energy per pulse Turn-off energy per pulse Reverse bias safe operation area
I C = 0.3 mA; VGE = VCE VCE = 600 V; VGE = 15 V; IC = 10 A
Inductive load VCE = 600 V; IC = 10 A VGE = 15 V; R G = 100 VGE = 15 V; R G = 100 TVJ = 125 C TVJ = 125C
250 100 1.1 1.1 30
A
VCEK = 1200 V VCE = 900 V; VGE = 15 V RG = 100 ; non-repetitive TVJ = 125C 10 40 1.5 s A K/W
www..com circuit safe operation area Short SCSOA
t SC I SC RthJC
Short circuit duration Short circuit current Thermal resistance juntion to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20090409
(c) 2009 IXYS all rights reserved
IXA12IF1200HB
preliminary
Diode
Ratings Symbol I F25 I F 90 VF Q rr I RM t rr Erec(off) RthJC
Forward voltage
Definition
Forward current
Conditions TC = 25C TC = 90C I F = 10 A TVJ = 25C TVJ = 125 C
min.
typ.
max. 22 14
V Unit A A V V C A ns mJ
1.95 1.85 tbd tbd tbd tbd
2.2
Reverse recovery charge Maximum reverse recovery current Reverse recovery time Reverse recovery losses at turn-off Thermal resistance juntion to case
VR = 600 V; di F /dt = I F = 10 A A/s; TVJ = 125 C
1.8
K/W
Equivalent Circuits for Simmulation
I
V0
R0
Ratings Symbol V0 R0 V0 R0
R1 C1
Definition
IGBT
min. TVJ = 150 C TVJ = 150 C
typ.
max. 1.1 153 1.1 90
Unit V m V m
Diode
R2 C2
R3 C3
R4 C4
IGBT R1 R2 R3 R4 tbd tbd tbd tbd tbd tbd tbd tbd
Diode tbd tbd tbd tbd tbd tbd tbd tbd
1 2 3 4
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IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20090409
(c) 2009 IXYS all rights reserved
IXA12IF1200HB
preliminary Package TO-247
Ratings Symbol TVJ Tstg RthCH Weight MD FC
Mounting torque Mounting force with clip
Definition
Virtual junction temperature Storage temperature Thermal resistance case to heatsink
Conditions
min. -55 -55
typ.
max. 150 150
Unit C C K/W g
0.25 6 0.8 20 1.2 120
Nm N
Product Marking
Part number
I X A 12 IF 1200 HB = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] TO-247AD (3)
Logo Marking on product DateCode Assembly Code
abcdef YYWW XXXXXX
Ordering Standard
Part Name IXA 12 IF 1200 HB
Marking on Product IXA12IF1200HB
Delivering Mode
Base Qty Code Key
Sym.
Inches min. max.
Millimeter min. max.
A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1
0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29
4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39
www..com
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20090409
(c) 2009 IXYS all rights reserved
IXA12IF1200HB
preliminary
20
VGE = 15 V
20
VGE = 15 V 17 V 19 V 13 V
16
16
TVJ = 125C
11 V
12
IC [A]
TVJ = 25C
12
IC
TVJ = 125C
8
[A]
8
9V
4
4
0 0 1
VCE [V] Fig. 1 Typ. output characteristics
0 2 3 0 1 2
VCE [V] Fig. 2 Typ. output characteristics 20 IC = 10 A VCE = 600 V
3
4
20
16
15 VGE 10 [V]
IC [A]
12
8
4
TVJ = 125C TVJ = 25C
5
0 5 6 7 8
0
9
10
11
12
13
0
10
20
QG [nC]
30
VGE [V] Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge Eon
3.0 2.5 2.0
E [mJ]
RG = 100 VCE = 600 V VGE = 15 V TVJ = 125C
2.0
1.6
IC = 10 A VCE = 600 V VGE = 15 V TVJ = 125C
Eon
1.5 1.0 0.5
Eoff
E [mJ]
1.2
Eoff
0.8
0.4
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0.0 0 4 8 12
IC [A] Fig. 5 Typ. switching energy vs. collector current
16
20
0.0 80
120
160
200
240
RG [] Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20090409
(c) 2009 IXYS all rights reserved
IXA12IF1200HB
preliminary
20
16
12
IC [A]
8
TVJ = 125C TVJ = 25C
4
0 0 1
VF [V] Fig. 7 Typ. forward characteristic
2
3
www..com
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20090409
(c) 2009 IXYS all rights reserved

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