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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD231
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DESCRIPTION *With TO-126 package *Complement to type BD230 *High current (Max:-1.5A) *Low voltage (Max: -80V) APPLICATIONS *Drive stage in TV circuits
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD Tj Tstg Tamb PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb462 TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -1.5 -3 -1 12.5 10 150 -65~150 -65~150 UNIT V V V A A A W W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A IC=-1A ; VCE=-2V VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-5mA ; VCE=-2V IC=-150mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-50mA ; VCE=-5V 40 40 25 50 MIN TYP.
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BD231
SYMBOL VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT
MAX -0.8 -1.1 -1.3 -0.1 -0.1
UNIT V V V A A
250
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
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BD231
Fig.2 Outline dimensions
3


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