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GenX3TM A3-Class IGBTS
Ultra-Low Vsat PT IGBTs for up to 5kHz Switching
IXGK120N60A3 IXGX120N60A3
VCES = 600V IC110 = 120A VCE(sat) 1.35V
TO-264 (IXGK)
Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C Terminal Current Limit TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 1.5 Clamped Inductive Load TC = 25C
Maximum Ratings 600 600 20 30 200 120 75 600 ICM = 200 @ < 600 780 -55 ... +150 150 -55 ... +150 V V V V A A A A A V W C C C C C Nm/lb.in. N/lb. g g Features Optimized for Low Conduction Losses Square RBSOA High Current Handling Capability International Standard Packages Advantages PLUS 247TM (IXGX)
G C (TAB) E E
G
C
(TAB) E
G = Gate C = Collector
E = Emitter TAB = Collector
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque ( IXGK ) Mounting Force ( IXGX ) TO-264 PLUS247
300 260 1.13/10 20..120/4.5..27 10 6
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 500A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1 VCE = VCES, VGE = 0V
Characteristic Values Min. Typ. Max. 3.0 5.0 V 50 A 1.25 mA 400 nA 1.20 1.35 V
High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS99964A(02/09)
IXGK120N60A3 IXGX120N60A3
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.15 Inductive load, TJ = 125C IC = 100A, VGE = 15V VCE = 480V, RG = 1.5 Inductive load, TJ = 25C IC = 100A, VGE = 15V VCE = 480V, RG = 1.5 IC = IC110, VGE = 15 V, VCE = 0.5 * VCES VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 60A, VCE = 10 V, Note 1 Characteristic Values Min. Typ. Max. 65 108 14.8 800 140 450 67 130 39 82 2.7 295 260 6.6 40 83 3.5 420 410 10.4 S nF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.16 C/W C/W PLUS 247TM (IXGX) Outline TO-264 (IXGK) Outline
Note: 1. Pulse Test, t 300s; Duty Cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGK120N60A3 IXGX120N60A3
Fig. 1. Output Characteristics @ 25C
200 180 160 140 VGE = 15V 13V 11V 350 300 9V 250 VGE = 15V 11V 9V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IC - Amperes
7V
200 150 100 50 7V
5V 0 1.6 1.8 0 1 2
5V 3 4 5 6 7 8
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
200 180 160 140 VGE = 15V 13V 11V 9V 1.4
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.3 I = 200A
VCE(sat) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7
C
IC - Amperes
120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 5V 7V
I
C
= 100A
I
C
= 50A
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
3.0 2.8 2.6 2.4 TJ = 25C 200 180 160 I = 200A 100A 50A 140
Fig. 6. Input Admittance
VCE - Volts
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 5 6 7
C
IC - Amperes
TJ = - 40C 25C 125C
120 100 80 60 40 20 0
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N60A3 IXGX120N60A3
Fig. 7. Transconductance
200 180 160 TJ = - 40C 14 12 25C 125C 16 VCE = 300V I C = 120A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
140 120 100 80 60
VGE - Volts
10 8 6 4
40 20 0 0 20 40 60 80 100 120 140 160 180 200 220 2 0 0 50 100 150 200 250 300 350 400 450 500
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
100,000 220 200 Cies 10,000 180 160
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz Capacitance - PicoFarads
IC - Amperes
140 120 100 80 60 40 TJ = 125C RG = 1.5 dV / dt < 10V / ns
Coes 1,000
Cres 100 0 5 10 15 20 25 30 35 40
20 0 100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
Z(th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60A3(86)02-11-09-B
IXGK120N60A3 IXGX120N60A3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
12 11 10 I
C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
5.0 4.5 12 11 10 Eoff VCE = 480V Eon 5.5
----
5.0 4.5 4.0
= 100A Eoff VCE = 480V Eon -
4.0
RG = 1.5 , VGE = 15V
9
Eoff - MilliJoules
Eoff - MilliJoules
9 8 7 6 5 4 3 1 2 3 4 5 I C = 50A
---
3.5 3.0 2.5 2.0 1.5 1.0 0.5
E
8 7 6 5 4 3 2 1 50 55 60 65 70 75 80 85 90 95 TJ = 25C TJ = 125C
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 100
E
on
on
- MilliJoules
TJ = 125C , VGE = 15V
- MilliJoules
6
7
8
9
10
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
12 11 10 9 Eoff VCE = 480V I C = 100A Eon 5.5 475 450 425 400
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
1000 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5
----
tf
VCE = 480V
td(off) - - - -
RG = 1.5 , VGE = 15V
TJ = 125C, VGE = 15V
900
t d(off) - Nanoseconds
8 7 6 5 4 3 2 1 25 35 45 55 65 75
t f - Nanoseconds
800 700 I
C
Eoff - MilliJoules
Eon - MilliJoules
= 100A 600 500 400 300
375 350 325 300 1
I
C
= 50A
I C = 50A
1.0 0.5 95 105 115 0.0 125
85
2
3
4
5
6
7
8
9
10
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
500 475 450 TJ = 125C 500 475 450 425 400 450 425 400
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
475
tf
VCE = 480V I
C
td(off) - - - -
RG = 1.5 , VGE = 15V
450 425
t f - Nanoseconds
425 400 375 350 325 300 275 250 225 50 55 60 65 70 75 80 85 90 95 TJ = 25C
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
375 350 325 300 275 250 225 25 35
= 100A, 50A
400 375 350 325 300 275 250 125
tf
VCE = 480V
td(off) - - - -
375 350 325 300 275 250 225 100
RG = 1.5 , VGE = 15V
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N60A3 IXGX120N60A3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
160 140 120 100 80 60 40 20 1 2 3 4 5 6 7 8 9 10 I
C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
90 120 110 80 100 90 43
tr
VCE = 480V
td(on) - - - I
C
tr
VCE = 480V
td(on) - - - -
42 41 40 39
TJ = 125C, VGE = 15V
RG = 1.5 , VGE = 15V
= 100A
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
70 60 50 = 50A 40 30 20
80 70 60 50 40 30 20 10 0 50 55 60 65 70 75 80 85 90 95 TJ = 25C, 125C
38 37 36 35 34 33 32 31 100
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
110 100 90 48
tr
VCE = 480V
td(on) - - - -
46 44
RG = 1.5 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
80 70 60 50 40 30 20 25 35 45 55 65 75 85
I C = 100A
42 40 38 36 34
I
C
= 50A
32 30 125
95
105
115
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60A3(86)02-11-09-B

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