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| MMBD204SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications * Ultra high speed switching 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 s) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd TJ Ts Value 20 20 100 200 300 200 150 - 55 to + 150 Unit V V mA mA mA mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 15 V Capacitance between Terminals at VR = 6, f = 1 MHz Symbol VF IR CT Max. 1 0.1 4 Unit V A pF www..com SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/10/2008 MMBD204SEW www..com SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/10/2008 |
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