 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| N-CHANNEL 30V - 0.005 - 60A DPAK STripFETTM III POWER MOSFET TYPE STD100NH03L s s s s s s STD100NH03L VDSS 30 V RDS(on) < 0.0055 ID 60 A(2) TYPICAL RDS(on) = 0.005 @ 10 V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION The STD100NH03L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STD100NH03LT4 MARKING D100NH03L PACKAGE TO-252 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 20 60 60 240 100 0.66 700 -55 to 175 Unit V V V A A A W W/C mJ C 1/11 September 2003 STD100NH03L THERMAL DATA Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb(#) Maximum Lead Temperature For Soldering Purpose Max Max Max 1.5 100 43 275 C/W C/W C/W C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu. ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 30 A ID = 30 A Min. 1 Typ. 1.8 0.005 0.0060 Max. 2.5 0.0055 0.0105 Unit V DYNAMIC Symbol gfs (5) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS = 10 V ID = 30 A Min. Typ. 40 4100 680 70 Max. Unit S pF pF pF VDS = 15V f = 1 MHz VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1.3 2/11 STD100NH03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Qoss (6) Qgls (7) Parameter Turn-on Delay Time Rise Time Total Gate Charge Source Gate Charge Gate-Drain Charge Output Charge Third-quadrant Gate Charge Test Conditions ID = 30 A VDD = 15 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 15 V ID= 60 A VGS= 10 V Min. Typ. 16 95 57 11.8 7.3 27 55 77 Max. Unit ns ns nC nC nC nC nC VDS= 16 V VDS< 0 V VGS= 0 V VGS= 10 V SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 30 A VDD = 15 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 48 23 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (5) trr Qrr IRRM . Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current . Test Conditions Min. Typ. Max. 60 240 Unit A A V ns nC A ISD = 30 A VGS = 0 46 64 2.8 1.4 62 86 di/dt = 100A/s ISD = 60 A VDD = 30 V Tj = 150C (see test circuit, Figure 5) (2) Value limited by wire bonding (3) Pulse width limited by safe operating area. (4) Starting Tj = 25 oC, ID = 30A, VDD = 15V (5) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (6) Q oss = Coss* Vin , Coss = Cgd + Cds . See Appendix A (7) Gate charge for synchronous operation Safe Operating Area Thermal Impedance 3/11 STD100NH03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/11 STD100NH03L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/11 STD100NH03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STD100NH03L TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 7/11 STD100NH03L 8/11 |
Price & Availability of STD100NH03L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |