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CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Product Description
The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN front-ends. The device achieves a noise figure as low as 0.50 dB with 17 dB associated gain at 1.8 GHz. It is packaged in a low-cost miniature SC70 package.
Features
* * * * Low Noise figure and high associated gain for high IP3 receiver stages up to 4 GHz NF = 0.50dB; Ga = 17 dB @ 3V, 30 mA f = 1.8 GHz Low cost miniature package SC70 LG = 0.4m; WG = 800m
Applications
* * * PCS CDMA and UMTS Receivers WLAN Multicarrier Receivers Basestations
Package Style
Pin assignment: 1 = gate 2 = source 3 = drain 4 = source
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
1
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Absolute Maximum Ratings
Symbol V DS V DG V GS ID TCH TSG P TOT Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation (TS Thermal Resistance
RthChS Notes: Channel-soldering point source 198 K/W 1) TS: Temperature measured on the source lead at the soldering point to the PCB.
Electrical Specifications
Symbol IDSS V GS IG gm F Ga IIP3 Parameter Drain-Source Saturation Current Pinch-off Voltage Gate Leakage Current Transconductance Noise Figure* Associated Gain Input 3rd Order Intercept Point Conditions V DS = 3V; VGS = 0V V DS = 3V; ID = 1 mA V DS = 3V; ID = 30 mA V DS = 3V; ID = 30 mA V DS = 3V; ID = 10 mA; f = 1.8 GHz ID = 30 mA V DS = 3V; ID = 10 mA; f = 1.8 GHz ID = 30 mA V DS = 3V; ID = 10 mA; f = 1.8 GHz ID = 30 mA Min. 0 -0.7 140 Typ/Nom 80 -0.25 200 0.56 0.50 15.0 17.0 8.5 13.0 Max. 140 0 10 Units mA V A mS dB dB dB dB dBm dBm
Note*: Parameters are measured at input impedance for minimum noise figure and output impedance for maximum gain.
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
2
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Electrical Characteristics, Continued:
Typical Common Source S - Parameters @ 3V; 10mA; Zo = 50Ohm
f[GHz] S11 Mag 0.2 0.9764 0.3 0.9537 0.4 0.9280 0.5 0.9046 0.6 0.8779 0.7 0.8487 0.8 0.8207 0.9 0.7944 1.0 0.7733 1.1 0.7556 1.2 0.7388 1.3 0.7224 1.4 0.7090 1.5 0.6970 1.6 0.6873 1.7 0.6826 1.8 0.6780 1.9 0.6747 2.0 0.6705 2.1 0.6687 2.2 0.6648 2.3 0.6633 2.4 0.6636 2.5 0.6618 3.0 0.6626 3.5 0.6634 4.0 0.6637 4.5 0.6615 5.0 0.6560 5.5 0.6490 6.0 0.6724 S11 Ang S21 Mag S21 Ang S12 Mag -21.1 11.3599 164.4 0.0306 -31.4 11.0508 156.9 0.0408 -41.2 10.6821 149.7 0.0511 -51.5 10.3053 142.8 0.0621 -60.6 9.8595 136.4 0.0718 -69.4 9.4127 130.5 0.0787 -77.9 8.9213 124.8 0.0864 -85.9 8.4443 119.6 0.0898 -93.8 8.0254 114.6 0.0970 -100.9 7.6169 110.0 0.1001 -107.4 7.2086 105.6 0.1036 -114.3 6.8570 101.6 0.1064 -120.5 6.4833 97.6 0.1077 -126.7 6.1680 93.8 0.1110 -132.1 5.8699 90.1 0.1132 -137.2 5.5980 86.8 0.1143 -142.3 5.3439 83.6 0.1136 -147.1 5.0877 80.5 0.1171 -151.5 4.8517 77.3 0.1170 -155.9 4.6457 74.5 0.1180 -159.7 4.4596 71.7 0.1176 -163.7 4.2397 69.3 0.1201 -167.2 4.0655 66.3 0.1196 -170.7 3.9065 63.9 0.1186 174.7 3.2259 52.6 0.1194 163.3 2.7350 42.6 0.1182 154.1 2.3874 34.0 0.1211 146.3 2.1249 25.7 0.1247 138.9 1.9437 17.1 0.1292 132.0 1.7984 8.7 0.1370 123.6 1.6937 -1.6 0.1484 S12 Ang S22 Mag S22 Ang 78.0 0.6388 -18.8 74.4 0.6249 -28.1 67.6 0.6048 -37.0 57.4 0.5803 -45.5 53.5 0.5548 -53.7 50.7 0.5303 -61.2 47.8 0.5059 -68.8 43.3 0.4807 -75.6 38.5 0.4553 -82.4 36.1 0.4367 -88.6 32.6 0.4144 -95.2 30.4 0.3931 -100.9 27.7 0.3776 -107.0 26.3 0.3610 -113.2 23.8 0.3465 -118.7 21.7 0.3331 -125.0 20.0 0.3235 -131.2 18.4 0.3152 -137.1 16.7 0.3091 -143.0 14.7 0.3055 -148.8 13.6 0.3038 -154.4 12.8 0.3041 -159.8 11.3 0.3059 -165.1 9.7 0.3115 -170.0 6.0 0.3471 172.3 2.8 0.3849 163.0 1.6 0.4140 159.0 -2.0 0.4191 156.0 -1.9 0.4021 151.9 -3.3 0.3640 143.3 -8.7 0.3577 126.4
Typical Common Source Noise - Parameters @ 3V; 10mA; Zo = 50Ohm
f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.41 0.56 0.61 0.69 Ga [dB] 18.7 15.6 13.5 11.4 Mag (opt ) Phase(opt) [deg] 0.33 0.37 0.37 0.38 23 98 136 170 Rn/50 0.14 0.10 0.10 0.06
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
3
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Electrical Characteristics, Continued:
Typical Common Source S - Parameters @ 3V; 20mA; Zo = 50Ohm f(GHz) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 f[GHz] 0.9 1.8 2.4 3.0 S11 Mag 0.97 0.9304 0.9055 0.8667 0.8335 0.8024 0.7698 0.7481 0.7282 0.7065 0.6999 0.6836 0.6747 0.6652 0.6616 0.6589 0.6606 0.6572 0.6553 0.6559 0.6546 0.6563 0.6584 0.6613 0.6716 0.6771 0.6779 0.6714 0.6606 0.655 0.676 Fmin [dB] 0.39 0.52 0.57 0.69 S11 Ang -26.4 -38.8 -50.7 -62.1 -72.9 -82.6 -91.4 -99.8 -107.6 -114.8 -121.4 -127.9 -133.8 -139.6 -144.5 -149.3 -153.9 -158 -162.1 -165.8 -169.3 -172.7 -175.9 -179.1 167.9 157.4 148.6 141.1 134.1 127.7 119.8 S21 Mag 15.6618 15.0066 14.2231 13.4264 12.6226 11.7525 11.0016 10.2456 9.5923 9.0001 8.4315 7.9521 7.4751 7.0467 6.6648 6.2995 6.0058 5.675 5.4067 5.1498 4.9192 4.7035 4.4981 4.3034 3.534 2.9872 2.6078 2.3249 2.1238 1.9699 1.8452 S21 Ang S12 Mag 161.5 0.0225 152.7 0.043 144.5 0.0468 136.8 0.0548 130.1 0.0589 124 0.0657 118.1 0.0703 113.1 0.0739 108.4 0.0769 104 0.0812 99.8 0.0832 96.1 0.0851 92.4 0.0871 88.9 0.0883 85.7 0.0895 82.6 0.0919 79.6 0.0926 76.8 0.0934 74 0.0956 71.4 0.0969 69.1 0.0974 66.6 0.0987 64.1 0.0986 61.9 0.1001 51.7 0.1041 42.7 0.1082 34.6 0.1156 26.7 0.1228 18.7 0.1325 10.6 0.1451 0.2 0.1561 S21 Ang 69 69.3 61.9 55.7 50.6 47.6 46.8 41.4 39.1 36.1 33.4 32.3 31.4 29.1 28 25.8 25 23.6 23.1 22.5 21.1 20.1 18.8 18.9 16.5 14.4 12.4 10.2 7.7 5.5 -0.7 Rn/50 0.11 0.09 0.08 0.06 S22 Mag 0.5053 0.4925 0.4777 0.4509 0.4315 0.4109 0.3917 0.3752 0.3585 0.3447 0.3326 0.3213 0.3146 0.3075 0.3018 0.2981 0.2969 0.298 0.2999 0.3023 0.3083 0.3132 0.3205 0.3279 0.3751 0.4131 0.435 0.4349 0.4123 0.3779 0.3754 S22 Ang -25.5 -37.8 -49.1 -59.9 -69.8 -79.1 -87.5 -95.8 -103.7 -110.4 -118 -124.3 -131.3 -137.4 -143.5 -149.9 -155.9 -161.4 -166.8 -171.8 -176.7 178.9 174.7 171.1 158.1 151.6 148.7 145.9 141.3 132 115.3
Typical Common Source Noise - Parameters @ 3V; 20mA; Zo = 50Ohm Ga [dB] 20.4 16.5 16.5 12 Mag (opt ) Phase(opt) [deg] .28 0.36 0.38 0.40 36 115 115 175
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
4
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Electrical Characteristics, Continued:
Typical Common Source S - Parameters @ 3V; 30mA; Zo = 50Ohm f (GHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9669 -28.9 17.9930 159.6 0.0174 67.9 0.4392 -30.3 0.3 0.9203 -42.8 17.0430 150.4 0.0319 65.5 0.4304 -43.7 0.4 0.8853 -55.3 15.9826 141.9 0.0400 63.6 0.4126 -56.6 0.5 0.8484 -67.5 14.9623 133.8 0.0494 56.2 0.3904 -67.9 0.6 0.8124 -78.6 13.8074 127.2 0.0515 50.4 0.3798 -79.4 0.7 0.7788 -88.5 12.8368 121.0 0.0594 46.3 0.3593 -89.4 0.8 0.7488 -97.2 11.9013 115.3 0.0629 46.0 0.3485 -98.7 0.9 0.7250 -105.9 11.0245 110.4 0.0669 43.0 0.3380 -107.0 1.0 0.7055 -113.8 10.2779 105.5 0.0700 39.6 0.3250 -115.2 1.1 0.6900 -120.9 9.5436 101.5 0.0727 38.4 0.3185 -122.1 1.2 0.6796 -127.1 8.9289 97.3 0.0745 36.1 0.3091 -129.7 1.3 0.6702 -133.9 8.3778 93.7 0.0768 35.3 0.3022 -136.0 1.4 0.6631 -139.3 7.8532 90.4 0.0783 32.8 0.3003 -142.6 1.5 0.6546 -144.9 7.4009 87.0 0.0789 32.1 0.2986 -148.7 1.6 0.6512 -149.3 6.9723 83.7 0.0809 31.0 0.2958 -154.4 1.7 0.6510 -153.9 6.5873 81.0 0.0834 29.6 0.2941 -160.6 1.8 0.6506 -158.1 6.2652 78.0 0.0857 28.8 0.2968 -166.1 1.9 0.6495 -162.6 5.9403 75.5 0.0865 28.0 0.3000 -171.4 2.0 0.6504 -166.1 5.6561 72.7 0.0880 27.5 0.3043 -176.1 2.1 0.6502 -169.7 5.3547 70.3 0.0895 26.8 0.3101 179.7 2.2 0.6525 -173.0 5.1154 67.9 0.0903 24.5 0.3179 175.0 2.3 0.6543 -176.2 4.8797 65.8 0.0924 24.6 0.3231 171.4 2.4 0.6575 -179.4 4.6765 63.3 0.0918 23.7 0.3323 167.5 2.5 0.6583 177.7 4.4697 61.1 0.0948 23.5 0.3424 164.4 3.0 0.6720 165.4 3.6516 51.3 0.1004 21.1 0.3889 153.4 3.5 0.6819 155.3 3.0959 42.9 0.1054 19.5 0.4268 147.5 4.0 0.6828 146.7 2.6987 35.0 0.1141 17.3 0.4485 145.0 4.5 0.6761 139.2 2.4100 27.3 0.1232 14.7 0.4434 142.3 5.0 0.6671 132.3 2.2025 19.3 0.1322 11.7 0.4200 137.4 5.5 0.6552 126.1 2.0466 11.3 0.1461 7.9 0.3857 127.9 6.0 0.6756 118.5 1.9062 1.0 0.1601 2.0 0.3879 111.5 Typical Common Source Noise - Parameters @ 3V; 30mA; Zo = 50Ohm f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.38 0.52 0.56 0.65 Ga [dB] 21.1 16.8 14.0 12.2 Mag (opt ) Phase(opt) [deg] 0.30 0.39 0.42 0.43 45 125 145 179 Rn/50 0.09 0.08 0.07 0.06
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
5
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Electrical Characteristics, Continued:
Typical Common Source S - Parameters @ 3V; 50mA; Zo = 50Ohm f (GHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9618 -31.8 20.7005 157.5 0.0272 66.8 0.4251 -32.8 0.3 0.9123 -46.7 19.2937 147.6 0.0335 67.8 0.4062 -48.0 0.4 0.8623 -61.3 17.8753 138.7 0.0401 63.0 0.3901 -62.1 0.5 0.8209 -73.8 16.5593 130.3 0.0465 55.7 0.3701 -74.0 0.6 0.7833 -84.7 15.1321 123.7 0.0496 52.5 0.3510 -86.1 0.7 0.7540 -94.8 13.8973 117.6 0.0570 47.4 0.3383 -96.1 0.8 0.7222 -104.4 12.8242 111.9 0.0567 44.7 0.3261 -104.9 0.9 0.7025 -112.6 11.7778 107.2 0.0609 42.2 0.3144 -113.9 1.0 0.6843 -120.5 10.9063 102.5 0.0623 40.0 0.3046 -121.4 1.1 0.6726 -127.1 10.1004 98.7 0.0642 39.6 0.2982 -128.6 1.2 0.6621 -133.0 9.3923 94.9 0.0673 37.8 0.2922 -136.3 1.3 0.6553 -140.0 8.8089 91.4 0.0687 35.9 0.2854 -142.4 1.4 0.6489 -144.7 8.2247 88.2 0.0713 35.5 0.2854 -148.4 1.5 0.6433 -150.2 7.7393 84.8 0.0744 34.0 0.2829 -154.8 1.6 0.6419 -154.6 7.2883 81.9 0.0744 34.5 0.2826 -159.9 1.7 0.6418 -158.8 6.8740 79.3 0.0764 32.4 0.2828 -166.2 1.8 0.6426 -163.0 6.5328 76.1 0.0783 32.5 0.2869 -171.2 1.9 0.6424 -166.9 6.1717 73.8 0.0810 29.8 0.2890 -176.1 2.0 0.6455 -170.4 5.8627 71.2 0.0805 30.7 0.2951 179.8 2.1 0.6455 -173.4 5.5567 68.9 0.0813 29.6 0.3020 175.1 2.2 0.6473 -176.7 5.3144 66.7 0.0826 28.8 0.3093 171.0 2.3 0.6511 -179.4 5.0604 64.5 0.0843 29.5 0.3172 167.7 2.4 0.6536 177.8 4.8340 62.2 0.0867 28.1 0.3246 164.5 2.5 0.6579 174.5 4.6309 60.0 0.0886 27.0 0.3347 161.5 3.0 0.6734 163.0 3.7797 50.5 0.0955 25.6 0.3818 151.2 3.5 0.6863 153.1 3.2101 42.1 0.1022 23.3 0.4207 146.2 4.0 0.6863 145.1 2.7931 34.6 0.1117 21.0 0.4399 143.7 4.5 0.6807 137.6 2.4953 26.9 0.1220 18.3 0.4376 141.3 5.0 0.6694 130.6 2.2740 18.9 0.1325 14.8 0.4142 136.6 5.5 0.6559 124.8 2.1046 11.1 0.1471 11.9 0.3767 127.1 6.0 0.6760 117.4 1.9666 0.8 0.1588 4.3 0.3798 110.9 Typical Common Source Noise - Parameters @ 3V; 50mA; Zo = 50Ohm f[GHz] 0.9 1.8 2.4 3.0 Fmin [dB] 0.44 0.53 0.59 0.69 Ga [dB] 21.3 16.9 14.1 12.3 Mag (opt ) Phase(opt) [deg] 0.32 0.45 0.47 0.44 44 122 144 178 Rn/50 0.08 0.07 0.07 0.06
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
6
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Packaging and Ordering Information
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
7
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Top; Line 1: TriQuint Logo and "H8"
Bottom: Last 3 char of Lot Number
Ordering Code (taped): CFH800 ESD: Electrostatic discharge sensitive device: Observe handling precautions!
Additional Information
1
1 For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info_wireless@tqs.com Tel: (503) 615-9000 Fax: (503) 615-8902
For technical questions and additional information on specific applications: Email: info_wireless@tqs.com
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright (c) 2004 TriQuint Semiconductor, Inc. All rights reserved.
For additional information and latest specifications, see our website: www.triquint.com Revision C, April 29, 2004
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