 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES * Improved Ruggedness V(BR)DSS = 170V * 300W with 16dB Typical Gain @ 175MHz, 50V * Excellent Stability & Low IMD * Common Source Configuration * RoHS Compliant * 5:1 Load VSWR Capability at Specified Operating Conditions * Nitride Passivated * Refractory Gold Metallization * High Voltage Replacement for MRF151G Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device dissipation @ TC = 25C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25C unless otherwise specified VRF151G 170 36 40 500 -65 to 150 200 Unit V A V W C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = 20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 10A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 5.0 2.9 3.6 4.4 Min 170 Typ 180 2.0 3.0 1.0 1.0 Max Unit V mA A mhos V Thermal Characteristics Symbol RJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.35 Unit C/W 050-4938 Rev G 11-2009 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 375 200 12 Max VRF151G Unit pF Functional Characteristics Symbol GPS D Parameter f = 175MHz,- VDD = 50V, IDQ = 500mA, Pout = 300W f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 5:1VSWR - All Phase Angles Min 14 50 Typ 16 55 Max Unit dB % No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 25 14V 20 ID, DRAIN CURRENT (A) 10V 9V 8V 7V ID, DRAIN CURRENT (A) 30 25 TJ= -55C 20 TJ= 25C 15 TJ= 125C 10 5 0 250s PULSE TEST<0.5 % DUTY CYCLE 15 10 6V 5 5V VGS = 4V 0 0 V DS(ON) 5 10 15 20 25 0 2 4 6 8 10 12 , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 1.0E-9 Ciss C, CAPACITANCE (F) Coss ID, DRAIN CURRENT (A) 100 IDMax 1.0E-10 10 Rds(on) PD Max Crss 1.0E-11 050-4938 Rev G 11-2009 TJ = 125C TC = 75C 0 10 20 30 40 50 60 1 1 10 100 250 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area Typical Performance Curves 0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.3 0.1 0.05 10-4 SINGLE PULSE 0.7 D = 0.9 VRF151G 0.5 Note: PDM t1 t2 t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 400 350 OUTPUT POWER (WPEP) 300 250 200 150 100 50 0 0 2 4 6 8 INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 10 Vdd=50V, Idq = 250mA, Freq=150MHz 1.0 175MHz 150MHz 200MHz 050-4938 Rev G 11-2009 VRF151G + BIAS 0-6 V - D.U.T. T2 L1 OUTPUT C12 R1 C4 C5 C9 C10 L2 C11 + 50 V - R2 C1 T1 C6 C2 C3 INPUT C7 C8 Figure 7, 175 MHz Test Circuit R1 - 100 Ohms, 1/2 W R2 - 1.0 k Ohm, 1/2W C1 - Arco 424 C3,C4,C7,C8,C9 - 1000 pF Chip C5, C10 - 0.1 F Chip C11 - 0.47 F Ceramic Chip, Kemet 1215 or Equivalent (100V) C12 - Arco 422 L1 - 10 Turns AWG #18 Enameled Wire. Close Wound, 1/4" I.D. L2 - Ferrite Beads of Suitable Material for 1.5 - 2.0 H Inductance Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent. T1 - 9:1 RF Transformer, Can be made of 15 - 18 Ohms Semirigid Co - Ax, 62 - 90 Mils O.D. T2 - 1:4 RF Transformer, Can be made of 16 - 18 Ohms Semirigid Co - Ax, 70 - 90 Mils O.D. Board Material - 0.062" Fiberglass (G10), 1 oz. Copper Clad, 2 sides, r = 5.0 NOTE: For stability, the input transformer T1 must be loaded with ferrite toroids or beads to increase the common mode inductance. For operation below 100 MHz. The same is required for the output transformer. 1.100 .435 1 0.400 2 0.390 Pin 1. Drain 2. Drain 3. Gate 4. Gate 5. Source 5 0.200 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. 3 .225 4 .065 rad 2 PL .107 .860 .005 .060 1.340 .210 Package Dimensions (inches) All Dimensions are .005 050-4938 Rev G 11-2009 Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,342,262 7,352,045 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
Price & Availability of VRF151G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |