Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M
The 35PD10M is the largest standard InGaAs detector available on the market. Both circular (10 mm diameter) and square (10 mm edge length) formats are offered. Standard packaging includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be available. Reliability is assured by planar, dielectric-passivated design. Applications include high sensitivity instrumentation and test equipment.
Features
Planar Structure Dielectric Passivation High Dynamic Impedance High Responsivity
Device Characteristics:
Test Conditions -1.0V -1.0V 1300nm 1550nm Rise Time ( est. 50 ohm load ) Dynamic Impedance 0V Spectral Range Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Parameters Dark Current Capacitance Responsivity Typical Performance Units 20 A 3 nF 0.9 A/W 1.0 A/W 1.0 s >60 K ohm 850 - 1650 nm 1 Volt 200 mA 30 mA o -40 C to + 85oC -40oC to + 85oC 250oC
Absolute Maximum Ratings
829 Flynn Road, Camarillo, CA 93012
tel(805)445-4500
fax(805)445-4502
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