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| APTGS50X170TE3 3 Phase bridge NPT IGBT Power Module * VCES = 1700V IC = 50A @ Tc = 80C Application AC Motor control Features * Non Punch Through (NPT) Low Loss IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 19 18 17 16 15 * * * * Benefits 20 14 21 13 12 34 56 78 9 10 11 12 * * * * * * * Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C 100A@1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-3 APTGS50X170TE3 - Rev 0 July, 2003 Max ratings 1700 100 50 150 20 480 Unit V A V W APTGS50X170TE3 Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current All ratings @ Tj = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1mA Tj = 25C VGE = 0V VCE = 1700V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ Max 0.1 3.3 6.5 100 1700 Unit V mA V V nA 0.02 1.5 2.7 3.2 4.5 Dynamic Characteristics Symbol Characteristic Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A RG = 30 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A RG = 30 Min Typ 3500 100 100 800 30 100 100 900 30 14.5 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =750A/s IF = 50A VR = 900V di/dt =750A/s Min Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ 2.2 2.0 2 4 6 12 Max 2.6 Unit V mJ C Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K Min RT = R25 exp B25 / 50 11 - T25 T APT website - http://www.advancedpower.com 2-3 APTGS50X170TE3 - Rev 0 T: Thermistor temperature RT: Thermistor value at T July, 2003 Typ 5 3375 Max Unit k K APTGS50X170TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight IGBT Diode 2500 -40 -40 -40 3 150 125 125 4.5 300 Min Typ Max 0.26 0.56 Unit C/W V C N.m g M5 Package outline PIN 1 PIN 21 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 3-3 APTGS50X170TE3 - Rev 0 July, 2003 |
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