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| DC COMPONENTS CO., LTD. R DMBT8050 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 25 20 5 500 225 +150 -55 to +150 Unit V V V mA mW o o .026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) .004 Max (0.10) C .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(sat) hFE fT 380s, Duty Cycle Min 25 20 5 120 150 2% Typ - Max 1 0.6 1.2 500 - Unit V V V A V V MHz Test Conditions IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=20V, IE=0 IC=500mA, IB=50mA IC=500mA, IB=50mA IC=50mA, VCE=1V IC=20mA, VCE=10V, f=100MHz Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain (1) Transition Frequency (1)Pulse Test: Pulse Width Classification of hFE Rank Range C 120~200 D 150~350 E 250~500 |
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