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| SKiiP 1403GB121-2DW I. Power section 2 * SKiiP703GB121CT per phase Absolute maximum ratings Symbol Conditions 1) Values 1200 900 20 1400 / 1050 2800 1050 / 787,5 1800 8640 373 -40...+150 (125) 3000 2 * 500 Units V V V A A A A A kA2s C V A IGBT and inverse diode VCES VCC Operating DC link voltage VGES IC IGBT, Theat sink = 25 / 70 C ICM IGBT, tp < 1 ms,Theat sink = 25C IF Diode, Theat sink = 25 / 70 C IFM Diode, tp < 1 ms IFSM Diode, Tj = 150 C, 10ms; sin 2 I t (Diode) Diode, Tj = 150 C, 10ms Tj , (Tstg) Visol AC, 1min. IC-package4) Theat sink = 70C, Tterm = 115 C SKiiPPACK SK integrated intelligent Power PACK rd 3 Generation 2-pack 3) SKiiP 1403GB121-2DW Target data housing S23 Characteristics Symbol IGBT V(BR)CES Conditions 1) min. VCES - - - - - - - - - typ. - 2,4 72 0,9 1,36 2,3 - 343 558 3 5 0,20 1,8 - 36 1,0 0,92 - - - - 2 * 400 2 * 500 0,1 3000 max. - - - - - - 2 - - - Units V mA mA V m V V mJ mJ nF nH m V V mJ V m C/W C/W C/W C/W A A % A 4) 5) gate driver without supply VGE = 0, Tj = 25 C ICES Tj = 125 C VCE = VCES 7) VCEO Tj = 125 C rT 7) Tj = 125 C VCEsat 7) IC = 980A, Tj = 125 C VCEsat 7) IC = 980A, Tj = 25 C IC=980A, VCC=600V Eon + Eoff5) VCC=900V Tj = 125 C C per SKiiP, AC side LCE top, bottom RCC-EE resistance, terminal-chip Inverse diode 2) VF = VEC IF= 900A; Tj = 125 C VF= VEC IF= 900A; Tj = 25 C Eon + Eoff5) IF= 900A; Tj = 125 C VTO Tj = 125 C rT Tj = 125 C Thermal characteristics Rthjs per IGBT Rthjs per diode 3) Rthsa L: P16 heat sink; 280 m3/ h W: WK 40; 8l/min; 50% glycol Current sensor Ip RMS Ta=100 C , Vsupply = 15V Ipmax RMS t2s Vsupply 14,25V, 0I 700A, Linearity per sensor Ippeak t 10 s, per sensor Mechanical data M1 DC terminals, SI Units M2 AC terminals, SI Units M3 to heat sink 6) - - - - - - - - - - 2,5 - - - 0,024 0,046 0,040 0,013 Features * SKiiP technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution * integrated current sensor * integrated temperature sensor * high power density 1) 2) 3) 4 8 - - - 3 6) 6 10 - Nm Nm Nm 7) 8) Theatsink = 25 C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast) D integrated gate driver U with DC-bus voltage measurement (option for GB) L mounted on standard P16 for forced air cooling W mounted on standard water cooler Tterm = temperature of terminal with SKiiPPACK 3rd generation gate driver assembly instruction must be followed measured at chip level external paralleling necessary This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee, expressed or implied is made regarding delivery, performance or suitability. by SEMIKRON 000911 B 7 - 13 |
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