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Bulletin I25172 rev. B 04/00
ST303C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Puk Version
620A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
ST303C..C
620 55 1180 25 7950 8320 316 289 400 to 1200 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
@ 50Hz @ 60Hz
V DRM/V RRM tq range (*) TJ
(*) t = 10 to 20s for 400 to 800V devices q t = 15 to 30s for 1000 to 1200V devices
q
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ST303C..C Series
Bulletin I25172 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 ST303C..C 08 10 12
VDRM /VRRM , maximum repetitive peak voltage V
400 800 1000 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1314 1260 900 340 50 VDRM 50 40
ITM 180 el
o
ITM 100s 1940 1880 1590 710 50 VDRM 55 6930 3440 1850 740 50 V DRM 40
ITM
Units
1130 1040 700 230 50 50 55
2070 2190 1900 910 50 40
6270 2960 1540 560 50 55 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST303C..C
620 (230) 55 (85) 1180 7950 8320 6690 7000
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
It
2
Maximum I t for fusing
2
316 289 224 204 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
3160
KA2 s t = 0.1 to 10ms, no voltage reapplied
2
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ST303C..C Series
Bulletin I25172 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
ST303C..C Units
2.16 1.44 1.48 0.57 m 0.56 600 1000 mA V
Conditions
ITM= 1255A, T J = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, IG = 1A
V T(TO)1 Low level value of threshold
High level value of forward slope resistance Maximum holding current Typical latching current
IH IL
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST303C..C
1000 0.83 Min 10
q
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
tq
q
Max. turn-off time (*)
Max 30
s
(*) t = 10 to 20s for 400 to 800V devices; t = 15 to 30s for 1000 to 1200V devices.
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST303C..C
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% V DRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST303C..C
60 10 10 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST303C..C Series
Bulletin I25172 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST303C..C
-40 to 125 -40 to 150 0.09 0.04 0.020 0.010 9800 (1000)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
83 TO - 200AB (E-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.010 0.012 0.015 0.022 0.036 0.010 0.012 0.015 0.022 0.036
Rectangular conduction
Single Side Double Side 0.007 0.012 0.016 0.023 0.036 0.007 0.013 0.017 0.023 0.037
Units
Conditions
K/W
T J = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
30
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
t q(s) dv/dt (V/s) 20 10 CN 12 CM up to 800V 15 CL 20 CK CL CP CK CJ -50 DN DM DL DK -DP DK DJ DH 100 EN EM EL EK --EK EJ EH 200 FN * FM FL * FK * 400 HN HM HL HK
15 18 20 only for 25 1000/1200V 30
t q(s)
----FK * HK FJ * HJ FH HH
*Standard part number.
All other types available only on request.
4
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ST303C..C Series
Bulletin I25172 rev. B 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN.
14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 40.5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( C )
1 30 1 20 1 10 1 00 90 80 70
M a x im u m A llo w a b le H e a t sin k T e m pe ra t ure (C )
ST 3 0 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 10 0 2 00 30
S T 3 0 3 C ..C Se rie s (S in g le Sid e C o o le d ) R th J-hs C ) = 0 .0 9 K / W (D
C o nd uc tio n A ng le
C o ndu ctio n Pe rio d
30 60 50 40 0 50 1 00 1 5 0 2 0 0 25 0 30 0 3 5 0 4 00 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
60 90 120
60 90 1 20 18 0 300 40 0 50 0 DC 600 7 00
1 80
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST303C..C Series
Bulletin I25172 rev. B 04/00
M a x im um A llo w a b le H e a t sin k T e m p e ra t ure ( C ) 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 1 0 0 20 0 3 0 0 4 0 0 50 0 6 00 70 0 80 0 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Co nd uc tio n A ng le
M a xim u m A llo w a b le H e a tsin k T e m p e rat u re ( C )
ST 3 0 3 C ..C S e rie s (D o u b le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 4 K / W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 20 0 40 0 30 60
S T 3 0 3 C ..C Se rie s (D o ub le S id e C o o le d ) R th J-hs (D C ) = 0 .0 4 K / W
C o nd uc tio n P e rio d
3 0 60 90 120 180
9 0 12 0 180 DC 6 00 80 0 1 0 00 1 2 00
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
M a x im um A v e ra g e O n -sta t e P o w e r Lo ss (W )
M ax im u m A v e ra ge O n - sta t e P o w e r Lo s s (W )
2 0 00 1 8 00 1 6 00 1 4 00 1 2 00 1 0 00 8 00 6 00 4 00 2 00 0 0 10 0 20 0 30 0 4 00 50 0 6 0 0 7 0 0 80 0 A v e ra g e O n - st a te C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics
C o nduc tio n An g le
2800 2400 2000 1600 1200 80 0 40 0 0 0 2 00 4 00 60 0 800 1 0 00 1 20 0 A v e ra g e O n -st a te C u rre n t (A )
Fig. 6 - On-state Power Loss Characteristics
180 120 90 60 30 R M S Lim it
DC 180 120 90 60 30 R M S Lim it
Co nd uc tio n Pe rio d
S T 3 0 3 C ..C Se rie s T J = 1 2 5 C
ST 3 0 3 C ..C S e rie s T J = 1 2 5 C
Peak Half Sine Wave O n-state Curren t (A)
7000 6500 6000 5500 5000 4500 4000 3500 3000 1
At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Pe a k H a lf S in e W a v e O n -st a te C u rre n t (A )
7500
8000 7500
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e r su s P u lse T ra in D ura t io n . C o n tro l O f C o n d u c tio n M a y N o t B e M a in t a in e d . 7000 In it ia l T J = 1 2 5 C N o V o lt a g e R e a pp lie d 6500 R a te d V RRM R e a p p lie d 6000 5500 5000 4500 4000 3500 3000 0.01 ST 3 0 3 C ..C Se rie s 0.1 P u ls e Tr a in D u ra t io n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
ST303C..C Series 10 100
1
N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
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ST303C..C Series
Bulletin I25172 rev. B 04/00
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) 10000 Instan taneous O n-state Curren t (A) 0 .1 S T 3 0 3 C ..C Se rie s
1000
TJ = 25C TJ = 125C
0 .0 1
ST 303C..C Series 100 0 1 2 3 4 5 6 7 8 Instan taneous O n-state Volta ge (V )
Fig. 9 - On-state Voltage Drop Characteristics
St e a d y S ta t e V a lue R t hJ-hs = 0 .0 9 K / W (Sin g le S id e C o o le d ) R th J- hs = 0 .0 4 K / W (D o u b le Sid e C o o le d ) (D C O p e ra t io n ) 0 .0 1 0 .1 1 10
0 .0 0 1 0 .0 0 1
Sq u a re W a v e Pu lse D u ra tio n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximum Reverse Recovery Charge - Q rr (C)
M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f O n-state Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
I TM = 50 0 A 3 00 A 20 0 A 10 0 A 50 A
180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
I T M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A
ST303C..C Series TJ = 125 C
ST 3 0 3 C ..C S e r ie s T J = 1 2 5 C
1 E4
P e a k O n -st at e C u rre n t (A )
10 00 1 50 0
5 00
4 00 2 00
10 0 50 Hz 10 00 500
40 0 20 0
10 0
5 0 Hz
1 E3
3 00 0
2 00 0 2 50 0
Sn ubbe r circ uit R s = 1 0 o hm s C s = 0 .47 F V D = 8 0 % V D RM ST30 3C ..C Se ries Sin uso idal pulse T C = 40C
1 5 00 2 0 00 25 00 3 00 0 tp
Snubbe r c ircu it R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM ST30 3C ..C S erie s Sinuso id al pulse T C = 5 5C
tp
1 E2 1E 1
1 E2
1E 3
1 E 4E 41 E 1 1 1E 1
1 E2
1E3
1 E4
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
P u lse B ase w idt h ( s)
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ST303C..C Series
Bulletin I25172 rev. B 04/00
1 E4
Snubb er circuit R s = 10 o hm s C s = 0.4 7 F V D = 80 % VD RM 100 50 Hz 4 00 20 0 1 00 0 1 50 0 2 00 0 2 50 0 3 00 0 tp ST303 C. .C Se ries Tra pezo id al p ulse T C = 40 C di/dt = 50 A/s 30 00 tp 2 00 0 2 50 0 ST303 C. .C Se ries Trapezo idal pulse T C = 5 5C di/dt = 5 0A / s 5 00 40 0 Snu bbe r c irc uit R s = 1 0 o hm s C s = 0 .47 F V D = 8 0% V D RM
P e a k O n - sta t e C u rre n t (A )
100 0 50 0
5 0 Hz 20 0 1 00
1 E3
1 50 0
1 E2 1 E1
1E 2
1E 3
1 1 E 4E 41 E 1 1 1E
1E2
1 E3
1E4
P ulse B a se w id th ( s)
Fig. 14 - Frequency Characteristics
P ulse Ba se w id th ( s)
1 E4
Snub be r c irc uit R s = 1 0 o hm s C s = 0.47 F V D = 8 0% V D RM 20 0 1 00 5 0 Hz 5 00 4 00 200 100 Snubbe r circuit R s = 1 0 o hm s C s = 0.47 F V D = 80 % V D R M 50 Hz
P e a k O n -st a t e C u rre n t (A )
5 00
40 0
1 E3
10 0 0 15 0 0 2 00 0 2 50 0 30 00 tp ST3 03C ..C Serie s Trape zo idal pulse T C = 40 C di/dt = 100 A/s 1 50 0 20 00 2 50 0 3 00 0
1 00 0
tp
ST30 3C ..C Se rie s Trape zoidal pulse T C = 55C d i/dt = 1 00 A/s
1 E2 1 E1
1 E2
1 E3
1 E14E 4 1 E 1 1 1E
1 E2
1 E3
1 E4
P u lse Ba se w id t h ( s)
Fig. 15 - Frequency Characteristics
Pu lse B a se w id th ( s)
1E5
ST30 3C. .C Se ries Re cta ngu lar pu lse di/d t = 50 A/s 2 0 jo ule s pe r p ulse 3 5 10
Pe a k O n -st at e C u rre n t (A )
tp
1E4
2 3 5 10
2 0 jo ule s p er pulse
1E3
0. 5 0.4
1 1 0 .5 0.4 tp ST3 03C ..C Serie s Sinusoidal pulse
2
1E2
1E1 1E 1
1E 2
1 E3
1 E14E 41 E 1 1 1E
1 E2
1 E3
1 E4
P ulse Ba se w id th (s)
P u lse B a se w id th ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST303C..C Series
Bulletin I25172 rev. B 04/00
100 Instantaneous G ate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
10
1 VGD IGD 0.1 0.001
(1)
(2) (3) (4)
Device: ST303C..C Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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