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| AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement 2.5V Gate Drive Capability www..com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -20V 150m -10A Fast Switching Characteristic G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. This device is suited for low voltage and battery power applications. G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.2 -24 25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units /W /W Data and specifications subject to change without notice 1 200808155 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) o Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=+12V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6,VGS=-5V RD=6 VGS=0V VDS=-6V f=1.0MHz Min. Typ. Max. Units -20 -0.5 -0.1 4.4 6 1.5 0.6 25 60 70 60 300 180 60 150 250 -1 -25 V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) www..com VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total Gate Charge 2 +100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V 1 Min. Typ. Max. Units -10 -24 -1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=-10A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP3310GH/J 24 20 -4.5V T C =25 C o T C =150 o C -4.5V 18 -4.0V 15 -4.0V www..com -ID , Drain Current (A) -ID , Drain Current (A) -3.5V 12 -3.5V 10 -3.0V -3.0V -2.5V 5 6 -2.5V V GS = -2.0V V GS = -2.0V 0 0.0 2.5 5.0 7.5 10.0 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 800 1.8 I D = -2.8A T C =25 600 I D = -2.8A V GS = -4.5V 1.5 400 Normalized R DS(ON) 0 2 4 6 8 10 RDS(ON) (m) 1.2 200 0.9 0 0.6 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP3310GH/J 10 30 25 8 -ID , Drain Current (A) www..com 6 20 PD (W) 4 2 0 25 50 75 100 125 150 15 10 5 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thjc) 0.2 100us -ID (A) 0.1 0.1 0.05 10 1ms 0.02 PDM Single Pulse t 0.01 T 10ms T C =25 C Single Pulse 100ms 0.01 Duty Factor = t/T Peak T j = PDM x Rthjc + TC 1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 4 AP3310GH/J f=1.0MHz 5 1000 I D =-2.8A V DS =-6V 4 Ciss www..com 3 -VGS , Gate to Source Voltage (V) Coss C (pF) 100 2 Crss 1 0 0 2 4 6 8 10 1 3 5 7 9 11 13 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 10 1.5 T j =150 o C T j =25 o C 1 1 -VGS(th) (V) 0.5 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 o -IS(A) 0 100 150 -V SD (V) T j , Junction Temperature ( C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP3310GH/J VDS RD 90% www..com D VDS TO THE OSCILLOSCOPE 0.3 x RATED VDS RG G 10% S -5 V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE 0.3 x RATED VDS G S -1~-3mA I G QG D -5V QGS QGD VGS ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform 6 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 www..com E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 3310GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 7 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D A Millimeters SYMBOLS c1 D1 A A1 B1 www..com MIN NOM MAX 2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 ---5.88 2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84 2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 ---7.80 E1 E B2 c c1 D A1 B2 B1 F D1 E E1 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 3310GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 8 |
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