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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package www..com *High voltage *Fast switching speed APPLICATIONS *Intended for switching and industrial applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION BUX48B Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak (tp<5ms) Bast current Bast current-peak (tp<5ms) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1200 600 7 15 30 4 20 175 200 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0; IE=50mA; IC=0; IC=6A;IB=1.5A IC=10A;IB=4A IC=6A;IB=1.5A IC=10A;IB=4A VCE=1200V;VBE=-0 TC=125 VCE=600V;IB=0 VEB=6V;IC=0 IC=1A ;VCE=5V 15 MIN 600 7 TYP. www..com BUX48B SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES ICEO IEBO hFE MAX UNIT V V 1.5 3.0 1.5 2.0 0.5 3.0 1.0 1.0 50 V V V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=6A;IB1=-IB2=1.5A; VCC=250V 0.5 1.5 0.2 1.0 3.0 0.7 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUX48B Fig.2 Outline dimensions 3 |
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