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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N08M163WL1A
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8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512Kx16 bit Overview
The N08M163WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp's N08M1618L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard BGA package
Features
* Single Wide Power Supply Range 2.3 to 3.6 Volts * Very low standby current 4.0A at 3.0V (Typical) * Very low operating current 2.0mA at 3.0V and 1s (Typical) * Very low Page Mode operating current 1.0mA at 3.0V and 1s (Typical) * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion * Low voltage data retention Vcc = 1.8V * Special processing for Soft Error Rate (SER) reduction * Automatic power down to standby mode * Compact space saving BGA package available
Product Family
Part Number N08M163WL1AB Package Type 48 - BGA Operating Temperature -40oC to +85oC Power Supply (Vcc) 2.3V - 3.6V Speed 70ns @ 2.7V 100ns @ 2.3V Standby Operating Current (ISB), Current (Icc), Max Max 20 A 3 mA @ 1MHz
N08M163WL1AD Known Good Die
Pin Configurations
1 A B C D E F G H
LB I/O8 I/O9 VSS VCC
Pin Descriptions
4
A1 A4 A6 A7 A16 A15 A13 A10
2
OE UB I/O10 I/O11 I/O12
3
A0 A3 A5 A17 NC A14 A12 A9
5
A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11
6
CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC
Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC
Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected
I/O14 I/O13 I/O15 A18 NC A8
48 Pin BGA (top) 8 x 10 mm
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Functional Block Diagram
N08M163WL1A
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Address Inputs A0 - A 3
Word Address Decode Logic W o r d M u x Input/ Output Mux and Buffers
Address Inputs A4 - A18
Page Address Decode Logic
32K Page x 16 Word x 16 bit RAM Array
I/O0 - I/O7
I/O8 - I/O15
CE1# CE2 WE# OE# UB# LB#
Control Logic
Functional Description
CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER
N08M163WL1A
Rating -0.3 to VCC+0.3 -0.3 to 4.5 500 -40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW
o
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C
oC oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 s Cycle Time2 Read/Write Operating Supply Current @ 70 ns Cycle Time2 Page Mode Operating Supply Current @ 70 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) Maximum Standby Current3 Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.5 10.0 Chip Disabled3 Test Conditions Min. 2.3 1.8 VCC-0.6 -0.3 VCC-0.2 0.2 0.5 0.5 2.0 12.0 VCC+0.3 0.6 Typ1 Max 3.6 Unit V V V V V V A A mA mA
ICC3
4.0
mA
ISB1
2.0
20.0
A
Maximum Data Retention Current3
IDR
10.0
A
1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Power Savings with Page Mode Operation (WE = VIH)
N08M163WL1A
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Page Address (A4 - A18)
Open page ...
Word Address (A0 - A3)
Word 1
Word 2
Word 16
CE1 CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs.
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature
N08M163WL1A
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0.1VCC to 0.9 VCC 5ns 0.5 VCC CL = 30pF -40 to +85 oC
Timing
Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tWP tAS tWR tWHZ tDW tDH tOW 50 0 10 15 10 0 0 15 100 70 70 50 0 0 30 40 0 5 30 30 2.3 - 3.6 V Min. 100 100 100 35 10 5 0 0 10 70 50 50 40 0 0 20 20 20 Max. 2.7 - 3.6 V Min. 70 70 70 35 Max. Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N08M163WL1A
tRC
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Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
Address tAA tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC Address
tAA
tHZ(1,2)
CE1# tCO CE2 tLZ(2) tOE OE# tOLZ tLB, tUB LB#, UB# tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid tOHZ(1)
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control)
tWC Address tAW CE1# tCW CE2 tLBW, tUBW LB#, UB# tAS WE# tDW High-Z Data In tWHZ Data Out tWP
N08M163WL1A
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tWR
tDH
Data Valid tOW High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC Address tAW CE1# (for CE2 Control, use inverted signal) LB#, UB# tWP WE# tDW Data In tLZ Data Out tWHZ tDH tCW tAS tLBW, tUBW tWR
Data Valid
High-Z
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Ball Grid Array Package
BOTTOM VIEW 8 mm
N08M163WL1A
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0.75 mm 10 mm
0.75 mm
Ordering Information
N08M163WL1AX-XX X
Temperature
I = Industrial, -40C to 85C
Performance
70 = 70ns @ 2.7V
Package Type
B = 48-ball BGA D = Known Good Die
Note: Add -T&R following the part number for Tape and Reel. Orders will be considered in tray if not noted.
Revision History
Revision # 01 Date 11/01/02 Change Description Initial Release
(c) 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23319-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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