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SUP/SUB85N04-03
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0035 @ VGS = 10 V 0.0053 @ VGS = 4.5 V
ID (A)
85 a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP85N04-03 DS S N-Channel MOSFET
Top View SUB85N04-03
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
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Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 "20 85a 85a 240 75 280 250c 3.75 -55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71124 S-00654--Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC
Symbol
Limit
40 62.5 0.6
Unit
_C/W
2-1
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SUP/SUB85N04-03
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0029 0.0044 0.0035 0.0053 0.0053 0.0063 S W 40 V 1 3 100 1 50 250 A mA A nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 6860 1320 800 165 25 55 15 VDD = 30 V, RL = 0 35 W V, 0.35 ID ^ 85 A, VGEN = 10 V RG = 2 5 W A V, 2.5 90 95 125 25 135 ns 145 195 250 nC C pF F
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Qgs VDS = 30 V, VGS = 10 V ID = 85 A V V, Qgd td(on) tr td(off) tf
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 85 A di/dt = 100 A/ms A, IF = 85 A, VGS = 0 V 1.1 60 2.6 0.08 85 A 240 1.4 90 4 0.15 V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 71124 S-00654--Rev. B, 27-Mar-00
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SUP/SUB85N04-03
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 5V 200 250
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Transfer Characteristics
150
150
100 4V 50 3V 0 0 2 4 6 8 10
100 TC = 125_C 50 25_C -55_C 0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
200 TC = -55_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 25_C 0.008
On-Resistance vs. Drain Current
0.006
120
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125_C VGS = 4.5 V 0.004 VGS = 10 V 0.002
80
40
0 0 20 40 60 80 100
0 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Capacitance
12000 20
Gate Charge
V GS - Gate-to-Source Voltage (V)
10000 C - Capacitance (pF) Ciss
16
VDS = 30 V ID = 85 A
8000
12
6000
8
4000 Coss 2000 Crss 0 0 8 16 24 32 40
4
0 0 60 120 180 240 300
VDS - Drain-to-Source Voltage (V) Document Number: 71124 S-00654--Rev. B, 27-Mar-00
Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600
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SUP/SUB85N04-03
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
100 1.6 r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A I S - Source Current (A)
Source-Drain Diode Forward Voltage
1.2
TJ = 150_C 10
TJ = 25_C
0.8
0.4
0 -50
1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000 60
Drain Source Breakdown vs. Junction Temperature
100 I Dav (a)
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54 ID = 250 mA V (BR)DSS (V) IAV (A) @ TA = 25_C 48 IAV (A) @ TA = 150_C 42
10
1
36
0.1 0.00001 0.0001 0.001 0.01 0.1 1
30 -50
-25
0
25
50
75
100
125
150
175
tin (Sec)
TJ - Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
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Document Number: 71124 S-00654--Rev. B, 27-Mar-00
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SUP/SUB85N04-03
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
100 1000
Vishay Siliconix
Safe Operating Area
80 100 I D - Drain Current (A) I D - Drain Current (A) 60 Limited by rDS(on) 10
10 ms 100 ms 1 ms 10 ms 100 ms dc
40
20
1
TC = 25_C Single Pulse
0 0 25 50 75 100 125 150 175
0.1 0.1 1 10 100
TC - Ambient Temperature (_C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1
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0.05 0.02 Single Pulse
0.01 10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71124 S-00654--Rev. B, 27-Mar-00
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2-5
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