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Prepared Checked Approved Product Specifications Ref No. Total Page Page No. A-1 9 1 AN17823A Silicon Monolithic Bipolar IC Structure Appearance Application Function SIL-9 Pin Plastic Package (Power Type with Fin) Low Frequency Amplifier BTL 4.0W x 1ch Power Amplifier with Standby Function and Volume Function A No. 1 2 3 4 5 6 7 8 Absolute Maximum Ratings Item Storage Temperature Operating Ambient Temperature Operating Ambient Pressure Operating Constant Acceleration Operating Shock Supply Voltage Supply Current Power Dissipation Symbol Tstg Topr Popr Gopr Sopr Vcc Icc PD Ratings -55 ~ +150 -25 ~ +70 1.013x1050.61x105 9,810 4,900 Unit C C Pa m/s2 m/s2 Note 1 1 14.4 1.0 1.22 V A W 2 Ta=70C Operating Supply Voltage Range Vcc 3.5V ~ 13.5V Note 1) The temperature of all items shall be Ta=25C except storage temperature and operating ambient temperature. 2) At no signal input. Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. B-1 9 2 AN17823A B Electrical Characteristics No Item 1 2 Quiescent Circuit Current Standby Current (Unless otherwise specified, the ambient temperature is 25C2*C, Vcc=8.0V, frequency=1kHz and RL=8.) Test Symbol Cir- Conditions cuit ICQ ISTB VNO GV THD PO 1 PO 2 RR Voff Att GVm 1 1 1 1 1 1 1 1 1 1 1 Vin=0V, Vol=0V Vin=0V, Vol=0V Rg=10k, Vol=0V Po=0.5W, Vol=1.25V Po=0.5W, Vol=1.25V THD=10%, Vol=1.25V Vcc=9V THD=10%, Vol=1.25V Rg=10k, Vol=0V Vr=0.5Vrms, fr=120Hz Rg=10k, Vol=0V Po=0.5W, Vol=0V Po=0.5W, Vol=0.6V Limits min typ max 31 2.4 3.2 30 -250 70 20 1 0.10 33 0.10 3.0 4.0 50 0 85 60 10 0.4 35 0.5 250 - Unit mA A mVrms dB % W W dB mV dB dB Note Output Noise 3 Voltage 4 5 6 7 8 9 Voltage Gain Total Harmonic Distortion Maximum Power Output 1 Maximum Power Output 2 Ripple Rejection Ratio Output Offset Voltage 1 1 10 Volume Attenuation Ratio 11 Middle Voltage Gain 1 20.5 23.5 26.5 Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT). Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications (Reference Data for Design) Ref No. Total Page Page No. B-2 9 3 AN17823A B Electrical Characteristics No Item 1 Standby pin current 2 Volume pin current 3 Input Impedance (Unless otherwise specified, the ambient temperature is 25C2C, Vcc=8.0V, frequency=1kHz and RL=8.) Test Symbol Cir- Conditions cuit ISTB2 IVOL Zi 1 1 1 Vin=0V, VSTB=3V Vin=0V, Vol=0V Vin=0.3VDC Limits min typ max -12 24 30 25 36 Unit A A k Note Note) The above characteristics are reference values determined for IC design, but not guaranteed values for shipping inspection. If problems were to occur, counter measures will be sincerely discussed. Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. C-1 9 4 AN17823A (Description of test circuit and test method) Test Circuit 1 AN17823A 1 + 470 OUT1 8 Vcc 0V 2 3 4 10 + 5 270k 6 + 7 1.0 10k 8 9 68k 5V Stand-by Vin 0V Volume 1.25V Note) If the standby pin is open or 0V, the IC is on standby state. The IC is in the state of volume minimum if the Volume pin is ground. The IC is in the state of volume maximum if the Volume pin is open. Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. D-1 9 5 AN17823A Circuit Function Block Diagram +_ _+ 1 2 3 4 5 6 7 8 9 Vcc Output GND Input GND Pin Descriptions Pin No. Description 1 2 3 4 5 6 7 8 9 Vcc Ch Output (+) GND (Output) Ch Output (-) Standby Ch Input GND (Input) N.C Volume Note) Do not apply voltage or current to NC pin from outside. Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. E 9 6 AN17823A Package Name Unit : mm F - 9S 8.40.25 2.650.1 6.30.3 7.10.25 5.80.25 1.20.25 0.50.1 1.50.25 3.750.25 9 3.30.1 8 7 6 15.0 21.60.3 0.44 +0.1 -0.05 1.70.25 19.920.3 18.50.25 5 4 3 2 1 2.54 1.70.25 0.15 MAX 5.60.25 0.70.25 Name of item Date Code Company insignia Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. F-1 9 7 AN17823A SiN, Fe group, Ag plating, Solder plating, Ag paste, PSG, Cu group, Au plating, Solder dip, (Structure Description) Chip surface passivation Lead frame material Inner lead surface process Outer lead surface process Chip mounting method Wire bonding method Mold material Molding method Others ( Others ( Others ( Others ( ) ) ) ) ) ) ) ) 1 2, 6 2 6 3 4 5 5 Au-Si alloy, Solder, Others ( Others ( Others ( Multiplunger mold, Others ( Thermalsonic bonding, Epoxy, Transfer mold, Package 9-SIP(F) 1 2 3 4 5 6 Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications (Technical Data) Ref No. Total Page Page No. G 9 8 AN17823A ( 5000 Rth(j-c) = 12.0C/W Rth(j-a) = 66.5C/W ) F-9S Package Power Dissipation PD - Ta 4706 4500 5C/W heat sink 4000 3636 3500 10C/W heat sink Power Dissipation, PD (mW) 3000 20C/W heat sink 2500 2000 1500 Without heat sink PD=1880mW(25C) 1203 1000 Without heat sink 500 0 0 25 50 70 75 100 125 150 Ambient Temperature, Ta (C) Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. H 9 9 AN17823A (Precautions for use) 1) Make sure that the IC is free of any pin short-circuiting, ground short, and load shortcircuiting. 2) Ground the radiation fin so that there will be no difference in electric potential between the radiation fin and ground. 3) The thermal protection circuit operates at a Tj of approximately 150C. The thermal protection circuit is reset automatically when the temperature drops. 4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high or the IC operates high output power. 5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the previous stage. Eff. Date 06-MAR-2002 Eff. Date Eff. Date Eff. Date Semiconductor Company, Matsushita Electric Industrial Co., Ltd. FMSC-PSDA-002-01 Rev.1 |
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